| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
92 pcs
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92 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance |
The CEN 2N3811 is a PNP silicon dual transistor designed for general-purpose applications. It is qualified per MIL-PRF-19500/336 and comes in a TO-78 package.
Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of 60 Vdc and a maximum Collector Current (IC) of 50 mAdc for a single section. The device operates within a wide junction temperature range of -65 to +200 °C.
Electrical specifications include a minimum Forward-Current Transfer Ratio (hFE) ranging from 75 to 900 depending on the operating conditions and specific model (2N3810/L or 2N3811/L). Collector-Emitter Saturation Voltage (VCE(sat)) is typically 0.2 Vdc at 100 μAdc collector current and 10 μAdc base current. Base-Emitter Saturation Voltage (VBE(sat)) is typically 0.7 Vdc under similar conditions.
Dynamic characteristics include a minimum magnitude of forward current transfer ratio (hfe) of 1.0 at 30 MHz and 100 MHz. Output capacitance (Cobo) is 5.0 pF and input capacitance (Cibo) is 8.0 pF.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N3811 is 60 Vdc.
The maximum Collector Current (IC) for a single section of the 2N3811 is 50 mAdc.
The 2N3811 is supplied in a TO-78 package.
The operating and storage junction temperature range for the 2N3811 is -65 to +200 °C.
The typical Base-Emitter Saturation Voltage (VBE(sat)) is 0.7 Vdc at IC = 100 μAdc and IB = 10 μAdc.
The typical Collector-Emitter Saturation Voltage (VCE(sat)) is 0.2 Vdc at IC = 100 μAdc and IB = 10 μAdc.