| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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46 pcs
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46 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The 2N3251 from ST is a general-purpose NPN silicon bipolar junction transistor (BJT) housed in a TO-18 (TO-206AA) metal can package. This transistor is suitable for a wide range of electronic applications requiring reliable amplification and switching.
Key electrical characteristics include a collector-emitter voltage (VCEO) of up to 40V for the 2N3250 variant and 60V for the 2N3251 variant, and a continuous collector current (IC) of up to 200mA. The device operates within a wide temperature range of -65°C to +200°C.
With a maximum power dissipation of 0.36W at 25°C (TO-18 package), the 2N3251 is designed for moderate power applications. Its thermal resistance from junction to case is 0.15mW/°C, facilitating efficient heat dissipation.
The TO-18 package is a common through-hole component, making it easy to integrate into circuit boards using standard assembly processes. This transistor is a versatile component for designers working on analog and digital circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N3251 is 60 Vdc.
The maximum continuous collector current (IC) for the 2N3251 is 200 mAdc.
The operating and storage temperature range for the 2N3251 is from -65°C to +200°C.
The 2N3251 transistor is supplied in a TO-18 (TO-206AA) package.
The RoHS status is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is listed as REACH Unaffected.