2N3810 The 2N3810 from Texas Instruments is a PNP Silicon Dual Transistor in a TO-78 package. It offers a maximum collector-emitter voltage of 60V and a collector current of 50mA.
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2N3810

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Mfr Name: Texas Instruments
Texas Instruments
The 2N3810 from Texas Instruments is a PNP Silicon Dual Transistor in a TO-78 package. It offers a maximum collector-emitter voltage of 60V and a collector current of 50mA.
✓ Total Stock: 14 pcs
$ Price Range: $0.77

2N3810 Available from 1 distributor

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2N3810 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Input Capacitance

2N3810 Description

Short technical summary and product information.

The 2N3810 is a PNP Silicon Dual Transistor manufactured by Texas Instruments, designed for various electronic applications. It is qualified per MIL-PRF-19500/336 and comes in a TO-78 package.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 60 Vdc and a maximum collector current (IC) of 50 mAdc. The device also features a maximum power dissipation of 0.5 W at 25°C. The operating and storage junction temperature range is from -65°C to +200°C.

 

Electrical specifications include breakdown voltages of 60 Vdc for VCEO and VCBO, and 5.0 Vdc for VEBO. Cutoff currents (ICBO and IEBO) are rated at 10 ηAdc. The forward-current transfer ratio (hFE) varies with collector current, ranging from 75 to 450 for the 2N3811/2N3811L series and 100 to 150 for the 2N3810/2N3810L series under specific test conditions.

 

Dynamic characteristics include a forward current transfer ratio magnitude of 1.0 at 30 MHz and 100 MHz. Capacitance values are also specified, with Cobo at 5.0 pF and Cibo at 8.0 pF. The transistor is suitable for applications requiring reliable performance within its specified operating parameters.

2N3810 Quick Information

Product Type: Bipolar Transistor
Canonical Name: 2N3810 PNP Silicon Dual Transistor
Subcategory: Single, Pre-Biased

2N3810 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3810 Estimated Pricing

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1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3810 Features

  • PNP Silicon Dual Transistor
  • 60 Vdc Collector-Emitter Voltage
  • 50 mAdc Collector Current
  • TO-78 Package
  • Wide Operating Temperature Range

2N3810 Applications

  • Suitable for general amplification
  • Used in switching applications
  • Ideal for signal processing
  • Component in electronic circuits

2N3810 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) for the 2N3810 transistor?

The maximum collector-emitter voltage (VCEO) for the 2N3810 transistor is 60 Vdc.

What is the maximum collector current (IC) for the 2N3810 transistor?

The maximum collector current (IC) for the 2N3810 transistor is 50 mAdc for one section.

What is the operating temperature range for the 2N3810 transistor?

The operating and storage junction temperature range for the 2N3810 transistor is -65°C to +200°C.

What package type is the 2N3810 transistor supplied in?

The 2N3810 transistor is supplied in a TO-78 package.

What is the RoHS status of the 2N3810 transistor?

The RoHS status of the 2N3810 transistor is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the 2N3810 transistor?

The Moisture Sensitivity Level (MSL) for the 2N3810 transistor is 1 Unlimited.

What is the REACH status for the 2N3810 transistor?

The REACH status for the 2N3810 transistor is REACH Unaffected.

2N3810 Alternate Parts

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The CEN 2N3811 is a PNP Silicon Dual Transistor in a TO-78 package. It offers a maximum Collector-Emitter Voltage of 60V and a Collector Current of 50mA.
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The ST 2N3251 is an NPN silicon transistor designed for general-purpose applications. It features a TO-18 package and a maximum collector current of 200mA.
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