| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,818 pcs
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2818 pcs | On Request | 1 | On Request | On Request | 17/18+;1742+;2011+ | On Request | On Request |
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| Tape & Reel |
The 2N3810 from Microsemi Corporation is a PNP Silicon Dual Transistor designed for various electronic applications. It is housed in a TO-78 package, suitable for through-hole mounting.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 60 Vdc and a collector-base voltage (VCBO) of 60 Vdc. The maximum collector current (IC) is rated at 50 mAdc for a single section. The device operates within a wide temperature range, from -65°C to +200°C.
This dual transistor exhibits a forward-current transfer ratio (hFE) that varies with collector current, with values ranging from 75 to 450 for the 2N3811 variant and 100 to 150 for the 2N3810 variant under specific test conditions. Saturation voltages (VCE(sat) and VBE(sat)) are also specified, indicating its performance in switching applications.
Dynamic characteristics include output capacitance (Cobo) of 5.0 pF and input capacitance (Cibo) of 8.0 pF, making it suitable for moderate frequency applications. The TO-78 package is a common metal can package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N3810 is 60 Vdc.
The maximum collector current (IC) for the 2N3810 is 50 mAdc for one section.
The 2N3810 is supplied in a TO-78 package.
The operating and storage junction temperature range for the 2N3810 is -65°C to +200°C.
The minimum forward-current transfer ratio (hFE) for the 2N3810 at IC = 100 μAdc and VCE = 5.0 Vdc is 150.
The output capacitance (Cobo) of the 2N3810 is a maximum of 5.0 pF.