| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2432A is a silicon NPN bipolar junction transistor (BJT) designed for low power applications. It is housed in a TO-18 package and offers a maximum collector-emitter voltage (VCEO) of up to 45V and a continuous collector current (IC) of 100mA.
Key electrical characteristics include a maximum collector-emitter saturation voltage (VCE(sat)) of 0.15V at 10mA collector current and 0.5mA base current. The forward-current transfer ratio (hFE) ranges from 30 to 80 at 10μA collector current and 400 at 1.0mA collector current. Dynamic characteristics include an output capacitance (Cobo) and input capacitance (Cibo) of up to 12pF.
This transistor is suitable for various electronic circuits requiring a general-purpose NPN transistor with moderate voltage and current handling capabilities. Its TO-18 metal can package is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N2432A is 45 Vdc.
The maximum Collector Current (IC) for the 2N2432A is 100 mAdc.
The operating junction temperature range for the 2N2432A is -65 to +175 °C.
The 2N2432A is available in a TO-18 case package.
The maximum total power dissipation is 600 mW at TC = +25°C.
The minimum Forward-Current Transfer Ratio (hFE) is 400 when IC = 1.0 mAdc and VCE = 5.0 Vdc.
The maximum Collector-Emitter Saturation Voltage (VCE(sat)) is 0.15 Vdc when IC = 10 mA and IB = 0.5 mAdc.