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45 pcs
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45 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Teledyne 2N2432A is a silicon NPN low power transistor designed for general-purpose applications. It features a maximum Collector-Emitter Voltage (VCEO) of 45V and a maximum Collector Current (IC) of 100mA.
This transistor is housed in a TO-18 case, a common through-hole package. Its electrical characteristics include a maximum Collector-Emitter Saturation Voltage (VCE(sat)) of 0.15V at 10mA collector current and 0.5mA base current. The device also exhibits dynamic characteristics such as an output capacitance (Cobo) of up to 12pF and an input capacitance (Cibo) of up to 12pF at 100kHz.
With a maximum power dissipation of 600mW at 25°C case temperature, the 2N2432A is suitable for moderate power applications. The operating junction temperature range is from -65°C to +175°C, providing robustness in various environmental conditions. The transistor is available in RoHS3 compliant and non-RoHS versions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N2432A is 45 Vdc.
The maximum Collector Current (IC) for the 2N2432A is 100 mAdc.
The 2N2432A transistor comes in a TO-18 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.