| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2432 is a silicon NPN low power transistor manufactured by Texas Instruments. It is designed for general-purpose applications and features a TO-18 metal can package, suitable for through-hole mounting.
Key electrical characteristics include a collector-emitter voltage (VCEO) of up to 45V for the 2N2432A variant and a maximum collector current (IC) of 100mA. The transistor exhibits a forward-current transfer ratio (hFE) ranging from 30 to 400 depending on the specific test conditions and variant. Dynamic characteristics include an output capacitance (Cobo) and input capacitance (Cibo) of up to 12pF.
Thermal specifications indicate a maximum power dissipation of 300mW at 25°C ambient temperature and 600mW at 25°C case temperature. The operating junction temperature range is from -65°C to +175°C. The transistor is available in standard and high-reliability screened versions.
This component is available in non-RoHS (Sn/Pb plating) and RoHS compliant versions. It is suitable for various electronic circuits requiring a reliable NPN transistor in a through-hole package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N2432 has a maximum collector-emitter voltage (VCEO) of 30 Vdc, while the 2N2432A variant has a VCEO of 45 Vdc.
The maximum collector current (IC) for the 2N2432 is 100 mAdc.
The 2N2432 transistor is supplied in a TO-18 package.
The operating junction temperature range for the 2N2432 is -65°C to +175°C.
