| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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217 pcs
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217 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N2432 from Teledyne is a silicon NPN low power transistor designed for general-purpose applications. It is housed in a TO-18 metal can package, suitable for through-hole mounting.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 30V and a collector current (IC) of up to 100mA. The transistor also features a forward-current transfer ratio (hFE) ranging from 30 to 80 at low collector currents and up to 400 at 1.0mA. Its saturation voltage (VCE(sat)) is a maximum of 0.15V at 10mA collector current and 0.5mA base current.
With a maximum power dissipation of 300mW at 25°C ambient temperature, the 2N2432 operates within a junction temperature range of -65°C to +175°C. Its thermal resistance is 0.25 mW/°C junction-to-case.
This transistor is available in standard and high-reliability screened versions. It can also be specified in RoHS compliant (Sn/Pb plating) or RoHS versions by adding a suffix.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N2432 is 30 Vdc.
The maximum Collector Current (IC) for the 2N2432 is 100 mAdc.
The 2N2432 transistor comes in a TO-18 package.
The operating junction temperature range for the 2N2432 is -65°C to +175°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
