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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N1132 from Texas Instruments is a PNP silicon transistor designed for low-power applications. It is qualified per MIL-PRF-19500/177 and comes in a TO-39 package.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 40 Vdc and a Collector Current (IC) of up to 600 mAdc. The transistor offers a Forward Current Transfer Ratio (hFE) ranging from 20 to 90 under specific test conditions. Its dynamic characteristics include a high-frequency gain (hfe) of 2.5 to 20 at 20 MHz.
With a total power dissipation of 0.6W at 25°C ambient temperature and 2.0W at 25°C case temperature, the 2N1132 operates within a wide temperature range of -65°C to +200°C. The TO-39 package is designed for through-hole mounting.
This transistor is suitable for general-purpose amplification and switching applications where low power consumption and moderate voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N1132 is 40 Vdc.
The maximum Collector Current (IC) for the 2N1132 is 600 mAdc.
The 2N1132 transistor operates in a temperature range of -65°C to +200°C.
The 2N1132 transistor is supplied in a TO-39 package.
The Forward Current Transfer Ratio (hFE) of the 2N1132 at IC = 150 mAdc and VCE = 10 Vdc ranges from 20 to 90.
The turn-on time plus turn-off time for the 2N1132 transistor is 50 ηs.
