| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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328 pcs
|
328 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N1711 is a general-purpose NPN silicon planar transistor manufactured by Motorola Semiconductor. Encased in a TO-39 metal can package, this component is suitable for various electronic circuits.
Key electrical characteristics include a collector-emitter voltage of 50V, a collector-base voltage of 75V, and an emitter-base voltage of 7.0V. The DC current gain (hFE) ranges from 20 to 300 depending on the collector current. It features a transition frequency (fT) of 70 MHz and output capacitance (Cob) of 25 pF.
With a power dissipation rating of 800mW at 25°C ambient temperature and 3W at 25°C case temperature, the 2N1711 operates within a junction temperature range of -65°C to +200°C. Its TO-39 package is designed for through-hole mounting.
This transistor is also noted to be available in Defence/Military, JanXXX, and Hirel grades, indicating its suitability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector emitter voltage (VCER) for the 2N1711 is 50V when RBE is less than 10 Ohms.
The DC current gain (hFE) for the 2N1711 ranges from 20 at 0.01mA to 300 at 150mA collector current.
The transition frequency (fT) of the 2N1711 is 70 MHz under test conditions of IC=50mA and VCE=10V.
The 2N1711 comes in a TO-39 metal can package.
The operating and storage junction temperature range for the 2N1711 is -65°C to +200°C.