| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
400 pcs
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400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature |
The 2MBI800VT-170E is a power MOSFET module manufactured by Fujitsu Semiconductor. It is used in power switching applications requiring high current handling, with a DC collector current range of 800 to 1600 A. The device operates with a gate emitter voltage from -20 to 20 V and has a junction temperature rating of 175°C. Its electrical characteristics make it suitable for high-power circuits, including motor drives and power converters. The module is packaged for mounting in power electronic systems, providing reliable performance in demanding thermal and electrical environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate emitter voltage range is -20 to 20 V.
The junction temperature is 175°C.
The DC collector current ranges from 800 to 1600 A.
