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138,200 pcs
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138200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFQ17 from NXP Semiconductors is an NPN bipolar transistor designed for high-frequency applications up to 1 GHz. It is housed in a SOT89 plastic envelope, making it suitable for thick and thin-film circuits.
This transistor features a maximum collector-emitter voltage of 25V and a maximum collector current of 150mA. It boasts a transition frequency (fT) of 1.5 GHz at 150mA collector current and 15V VCE. The device also offers a typical DC current gain (hFE) ranging from 25 to 80 at 150mA and 5V VCE.
With a total power dissipation of 1W up to a collector tab temperature of 145°C, the BFQ17 is suitable for moderate power applications. Its excellent intermodulation properties and high power gain make it a strong choice for RF amplifier designs and other signal processing circuits where performance and reliability are critical.
The SOT89 package is a surface-mount type, facilitating automated assembly processes. The transistor's characteristics, including its feedback capacitance of 1.9pF and collector capacitance of 4pF at 1MHz, are important considerations for high-frequency circuit design.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BFQ17 is 25V.
The transition frequency (fT) of the BFQ17 is 1.5 GHz under test conditions of 150mA collector current and 15V VCE.
The typical DC current gain (hFE) of the BFQ17 ranges from 25 to 80 when measured at 150mA collector current and 5V VCE.
The BFQ17 transistor is supplied in a SOT89 plastic envelope.