| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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730 pcs
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730 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFG135 is an NPN silicon planar epitaxial transistor manufactured by NXP Semiconductors, specifically designed for wideband amplifier applications. Its construction, featuring small emitter structures with integrated emitter-ballasting resistors, enables high output voltage capabilities with low distortion.
Key electrical characteristics include a collector-emitter voltage (VCEO) of -15V, a continuous collector current (IC) of up to 150mA, and a transition frequency (fT) of 7GHz at 100mA collector current and 10V VCE. The DC current gain (hFE) typically ranges from 80 to 130 under specified conditions.
This transistor is supplied in a SOT-223 surface-mount package. The device's design ensures an excellent temperature profile due to the distribution of active areas across the surface.
With its high frequency capabilities and robust design, the BFG135 is suitable for various amplifier circuits requiring high performance and reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BFG135 transistor is -15V.
The BFG135 transistor has a transition frequency (fT) of 7GHz.
The BFG135 transistor is supplied in a SOT-223 package.
The typical DC current gain (hFE) of the BFG135 transistor is between 80 and 130.
The maximum total power dissipation for the BFG135 transistor is 1W up to a soldering point temperature of 145°C.