| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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226,000 pcs
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226000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Philips BFQ17 is an NPN bipolar transistor designed for RF applications, operating at frequencies up to 1 GHz. It is housed in a SOT89 plastic envelope, making it suitable for thick and thin-film circuit applications.
This transistor boasts extremely good intermodulation properties and a high power gain. Key electrical characteristics include a collector-emitter voltage (VCEO) of 25V, a maximum collector current (IC) of 150mA, and a transition frequency (fT) of 1.5 GHz at 150mA collector current and 15V VCE. The feedback capacitance (Cre) is a maximum of 1.9 pF at 1 MHz.
Thermal performance is managed with a total power dissipation (Ptot) of 1W up to a soldering point temperature (Ts) of 145 °C, and a junction-to-soldering point thermal resistance (Rth j-s) of 30 K/W. The maximum junction temperature (Tj) is 175 °C, with storage temperatures ranging from -65 °C to 150 °C.
The BFQ17 is intended for applications requiring high performance in RF signal amplification and processing, benefiting from its wideband capabilities and robust intermodulation characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BFQ17 transistor is 25V.
The transition frequency (fT) of the BFQ17 transistor is 1.5 GHz under the test conditions of IC = 150 mA and VCE = 15 V at 500 MHz.
The BFQ17 transistor is supplied in a SOT89 plastic envelope package.
The maximum power dissipation (Ptot) for the BFQ17 transistor is 1W up to a soldering point temperature of 145 °C.
The maximum junction temperature (Tj) for the BFQ17 transistor is 175 °C.