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91,000 pcs
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91000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The NXP Semiconductors PMPB100XPEA is a P-channel enhancement mode Trench MOSFET designed for various switching applications. It features a drain-source voltage of -20V and a typical drain-source on-state resistance of 100mΩ at VGS = -4.5V and ID = -3.2A.
This MOSFET is housed in a small, leadless DFN2020MD-6 (SOT1220) package measuring 2 x 2 x 0.65 mm. It boasts an extended operating temperature range up to 175°C and includes ElectroStatic Discharge (ESD) protection exceeding 2kV HBM.
Key applications include relay drivers, high-speed line drivers, high-side load switches, and general switching circuits. The device is AEC-Q101 qualified, indicating its suitability for demanding automotive and industrial environments.
The drain-source voltage is -20 V.
The typical drain-source on-state resistance is 100 mΩ.
The junction and ambient temperature range is -55 °C to 175 °C.
The PMPB100XPEA is in a DFN2020MD-6 package.
Yes, it has ElectroStatic Discharge (ESD) protection greater than 2 kV HBM.