BC806-16HVL
Nexperia USA Inc.
The Nexperia BC806-16HVL is a PNP bipolar transistor designed for surface mount applications. It offers a breakdown voltage of 80V and a maximum collector current of 500mA.
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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This Diodes Incorporated 2DA1213Y is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It features a collector-emitter breakdown voltage of 50V and can handle a maximum collector current of 2A. The transistor operates at a transition frequency of 160MHz and has a maximum power dissipation of 1W.
Designed for surface mounting, the 2DA1213Y comes in a compact SOT-89-3 package. Its electrical characteristics include a Vce saturation of 500mV at 50mA/1A and a low collector cutoff current of 100nA (ICBO). The DC current gain (hFE) minimum value is specified at a certain current, though the exact test condition is not detailed in the provided data.
This component is classified under Transistors - Bipolar (BJT) - Single. It is manufactured by Diodes Incorporated and is identified by the manufacturer part number 2DA1213Y-13. The product status is active.
| Qty | Low | High |
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| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the 2DA1213Y is 2 A.
The collector-emitter breakdown voltage (Vce) for the 2DA1213Y is 50 V.
The 2DA1213Y transistor is supplied in a SOT-89-3 package.
The transition frequency for the 2DA1213Y is 160MHz.
The maximum power dissipation for the 2DA1213Y is 1 W.
