JANTXV2N3637UB The SEMICOA JANTXV2N3637UB is a PNP bipolar transistor designed for various applications. It features a high collector-emitter voltage and a robust operating temperature range.
Mfr Part #:

JANTXV2N3637UB

Available from 1 distributors
Mfr Name: SEMICOA
SEMICOA
The SEMICOA JANTXV2N3637UB is a PNP bipolar transistor designed for various applications. It features a high collector-emitter voltage and a robust operating temperature range.
✓ Total Stock: 1,010 pcs
$ Price Range: $0.99

JANTXV2N3637UB Available from 1 distributor

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JANTXV2N3637UB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Military Grade
Mounting Type
Operating Temperature
Power Dissipation
SVHC Present
Storage Temperature
Tape & Reel
Transistor Type

JANTXV2N3637UB Description

Short technical summary and product information.

The JANTXV2N3637UB from SEMICOA is a PNP bipolar junction transistor (BJT) designed for electronic circuits requiring high voltage and current handling capabilities. This component is specified for a maximum collector-emitter voltage of 175V and a continuous collector current of 1A. It offers a power dissipation of 1.5W and operates reliably within a temperature range of -65°C to 200°C.

 

The transistor is housed in a surface-mount UB package, identified as 3-SMD, and is supplied on tape and reel for automated assembly processes. Its electrical characteristics include a low collector-emitter saturation voltage of 600mV at 5mA/50mA and a minimum DC current gain (hFE) of 100 at 50mA/10V.

 

This part is suitable for applications demanding stable performance under demanding conditions. The PNP configuration makes it useful in complementary designs or specific switching and amplification circuits. Its construction adheres to MIL-PRF-19500/357 standards, indicating suitability for demanding environments.

 

Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are currently unverified. The JANTXV2N3637UB is an active component, ready for integration into new designs.

JANTXV2N3637UB Quick Information

Product Type: PNP Bipolar Transistor
Series: JANTXV2N3637
Canonical Name: JANTXV2N3637UB PNP Bipolar Transistor
Subcategory: BJT

JANTXV2N3637UB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

JANTXV2N3637UB Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

JANTXV2N3637UB Features

  • PNP bipolar transistor for versatile applications.
  • High 175V collector-emitter voltage rating.
  • 1A continuous collector current capability.
  • Wide -65°C to 200°C operating temperature.
  • Surface mount UB (3-SMD) package.

JANTXV2N3637UB Applications

  • Suitable for high-voltage switching circuits.
  • Used in amplification stages.
  • Complementary designs.
  • Demanding environmental applications.

JANTXV2N3637UB FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the JANTXV2N3637UB?

The maximum collector-emitter voltage is 175V.

What is the continuous collector current of the JANTXV2N3637UB?

The continuous collector current is 1A.

What is the power dissipation for the JANTXV2N3637UB transistor?

The power dissipation is 1.5W.

What is the operating temperature range for the JANTXV2N3637UB?

The operating temperature range is -65°C to 200°C.

What package type is the JANTXV2N3637UB supplied in?

It is supplied in a surface mount UB package, specifically a 3-SMD.

Is the JANTXV2N3637UB RoHS compliant?

The RoHS status is listed as RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The MSL is 1 Unlimited.

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