| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19 pcs
|
19 pcs | On Request | 1 | On Request | On Request | 06/07 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Tape & Reel | |
| Transistor Type |
The 2N2907AUB from Microsemi Corporation is a PNP Bipolar Junction Transistor designed for various electronic applications. This component offers a collector-emitter breakdown voltage of 60V and can handle a maximum collector current of 600mA.
Key electrical characteristics include a Vce saturation of 1.6V at 50mA/500mA, a maximum collector cutoff current of 50nA, and a minimum DC current gain (hFE) of 100 at 150mA/10V. The transistor has a maximum power dissipation of 500mW.
This device is supplied in a surface mount UB package, identified by the 'TR' designation indicating Tape & Reel packaging. Its robust specifications make it suitable for general-purpose amplification and switching tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the 2N2907AUB is 600 mA.
The collector-emitter breakdown voltage (Vce) for the 2N2907AUB is 60 V.
The maximum power dissipation for the 2N2907AUB is 500 mW.
The 2N2907AUB is a PNP Bipolar Junction Transistor.
The 2N2907AUB is supplied in a surface mount UB package.