NSVBA123YMXWTBG The On Semiconductor NSVBA123YMXWTBG is a PNP Bias Resistor Transistor (BRT) designed for various applications. It features a 50V collector-emitter voltage rating and 100mA collector current.
Mfr Part #:

NSVBA123YMXWTBG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSVBA123YMXWTBG is a PNP Bias Resistor Transistor (BRT) designed for various applications. It features a 50V collector-emitter voltage rating and 100mA collector current.
Total Stock: 57,000 pcs
$ Price Range: $0.99

NSVBA123YMXWTBG Available from 1 distributor

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NSVBA123YMXWTBG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Automotive Qualification
Collector Current (Max)
Collector Cutoff Current
Collector-Emitter Voltage (Max)
DC Current Gain (hFE)
Forward Voltage
Mounting Type
Power Dissipation (Max)
Tape & Reel
Transistor Type

NSVBA123YMXWTBG Description

Short technical summary and product information.

The On Semiconductor NSVBA123YMXWTBG is a PNP Bias Resistor Transistor (BRT) housed in a 3-XDFN surface mount package. This component is designed for applications requiring integrated resistors alongside a PNP transistor.

 

Key electrical specifications include a maximum collector-emitter voltage of 50V and a maximum collector current of 100mA. It incorporates two resistors: R1 with a nominal value of 2.2 kOhms and R2 with a nominal value of 10 kOhms. The DC current gain (hFE) is a minimum of 35 at 5mA and 10V. The typical forward voltage is 250mV at 300uA and 10mA, with a maximum collector cutoff current of 500nA.

 

This transistor has a power dissipation rating of 450 mW and is qualified to AEC-Q101 automotive standards. The package is a 3-XDFN suitable for surface mounting, and it is supplied on tape and reel.

 

This part is suitable for designs needing a compact solution with built-in biasing resistors, simplifying circuit design and reducing component count.

NSVBA123YMXWTBG Quick Information

Product Type: Bias Resistor Transistor
Series: NSVBA123Y
Canonical Name: On Semiconductor NSVBA123YMXWTBG PNP Bias Resistor Transistor
Subcategory: Bias Resistor Transistor

NSVBA123YMXWTBG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVBA123YMXWTBG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVBA123YMXWTBG Features

  • PNP Bias Resistor Transistor (BRT)
  • 50V Collector-Emitter Voltage Rating
  • 100mA Maximum Collector Current
  • Integrated 2.2k and 10k Ohm Resistors
  • AEC-Q101 Automotive Qualified

NSVBA123YMXWTBG Applications

  • Suitable for general purpose amplification
  • Used in switching applications
  • Ideal for circuits needing bias resistors
  • Automotive control modules

NSVBA123YMXWTBG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage is 50V.

What is the maximum collector current?

The maximum collector current is 100mA.

What is the typical collector-emitter saturation voltage?

The typical collector-emitter saturation voltage is 250mV at 300µA base current and 10mA collector current.

What package is this transistor available in?

It is available in a 3-XDFN surface mount package.

What resistors are integrated in the transistor?

The integrated resistors are 2.2kΩ (R1) and 10kΩ (R2).

What is the minimum DC current gain?

The minimum DC current gain (hFE) is 35 at 5mA collector current and 10V collector-emitter voltage.

Is the device AEC-Q101 qualified?

Yes, the device is AEC-Q101 qualified.

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