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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MICROWAVE 1N416C is a point contact mixer diode from the 1N Series, designed for applications spanning S-Band through X-Band. This diode utilizes epitaxial silicon optimized for low noise figure and wide bandwidth, making it suitable for single or multiple device mixer applications.
Key electrical characteristics include a maximum noise figure of 8.5 dB at 3.060 GHz and 6.0 dB at 9.375 GHz, with a VSWR of 1.5:1 at 3.060 GHz and 1.3:1 at 9.375 GHz. The IF impedance ranges from 350-450 Ohms at 3.060 GHz and 335-465 Ohms at 9.375 GHz. Conversion loss is specified at a maximum of 5.0 dB at 3.060 GHz and 5.5 dB at 9.375 GHz.
This diode is housed in a cartridge style package (CS101) and is designed for mechanical reliability. It operates within a temperature range of -55°C to +150°C and a storage temperature range of -65°C to +200°C. The 1N416C is suitable for use in waveguide, coaxial, and stripline applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum noise figure is 8.5 dB at 3.060 GHz with 1.0 mW LO power and 100 Ohms source impedance.
The maximum conversion loss is 5.5 dB at 9.375 GHz with 1.0 mW LO power and 100 Ohms source impedance.
The operating temperature range is -55°C to +150°C.
The 1N416C diode is supplied in a CS101 cartridge style package.
