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1N415C The MICROWAVE 1N415C is a point contact mixer diode designed for S-Band through X-Band applications. It offers low noise figure and wide bandwidth.
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1N415C

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Mfr Name: MICROWAVE
MICROWAVE
The MICROWAVE 1N415C is a point contact mixer diode designed for S-Band through X-Band applications. It offers low noise figure and wide bandwidth.
✓ Total Stock: 8 pcs
$ Price Range: $0.99

1N415C Available from 1 distributor

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1N415C Specifications Quick View

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1N415C Description

Short technical summary and product information.

The MICROWAVE 1N415C is a point contact mixer diode from the 1N Series, engineered for applications spanning S-Band through X-Band frequencies. This device utilizes epitaxial silicon optimized for low noise figure and wide bandwidth, making it suitable for both single and multiple device mixer configurations.

 

Key electrical characteristics include a maximum noise figure of 8.5 dB at 3.060 GHz and 7.5 dB at 9.375 GHz, with a VSWR of 1.5:1 under specified test conditions. The IF impedance ranges from 335 to 465 Ohms, and conversion loss is a maximum of 5.0 dB at 3.060 GHz and 6.0 dB at 9.375 GHz.

 

Designed for mechanical reliability, the 1N415C is housed in a cartridge-style package. Its applications extend to waveguide, coaxial, and stripline systems. The operating temperature range is -55°C to +150°C, and storage temperature is -65°C to +200°C.

1N415C Quick Information

Product Type: Point Contact Mixer Diode
Series: 1N Series
Canonical Name: 1N415C Point Contact Mixer Diode
Subcategory: RF Mixer Diode

1N415C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

1N415C Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

1N415C Features

  • Designed for S-Band through X-Band.
  • Optimized for low noise figure.
  • Features wide bandwidth performance.
  • Suitable for waveguide applications.
  • Housed in a cartridge package.

1N415C Applications

  • Suitable for S-Band to X-Band microwave applications.
  • Used in waveguide, coaxial, and stripline mixers.
  • Ideal for low noise figure RF front-end circuits.
  • Applicable in cartridge-style RF diode modules.
  • Used in high-frequency RF signal processing systems.

1N415C FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating frequency range for the 1N415C diode?

The 1N415C diode is designed for applications from S-Band through X-Band.

What is the typical noise figure of the 1N415C diode at 3.060 GHz?

The maximum noise figure for the 1N415C diode at 3.060 GHz is 5.5 dB.

What is the conversion loss of the 1N415C diode at 9.375 GHz?

The maximum conversion loss for the 1N415C diode at 9.375 GHz is 5.5 dB.

What is the operating temperature range for the 1N415C diode?

The operating temperature range for the 1N415C diode is -55°C to +150°C.

What type of package is the 1N415C diode supplied in?

The 1N415C diode is supplied in a cartridge style package.

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