| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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22 pcs
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22 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TE Connectivity 1N21D is a point contact mixer diode from the 1N Series, engineered for applications spanning S-Band through X-Band frequencies. This device utilizes epitaxial silicon optimized for low noise figure and wide bandwidth, making it suitable for single or multiple device mixer configurations.
Designed for mechanical reliability, the 1N21D features a low noise figure and wide bandwidth. It is suitable for use in waveguide, coaxial, and stripline applications. The diode is housed in a cartridge style package.
Typical performance data indicates a noise figure as low as 5.0 dB at 3.060 GHz and 5.5 dB at 9.375 GHz, with VSWR values of 1.3:1 and IF impedance ranging from 335 to 465 Ohms. Conversion loss is typically 5.0 dB at 3.060 GHz and can be as low as 5.5 dB at 9.375 GHz.
Operating temperature ranges from -55°C to +150°C, and storage temperature ranges from -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum noise figure of the 1N21D is 8.5 dB at 3.060 GHz.
-55°C to +150°C.
The package options include CS100 and CS101.
The maximum VSWR is 1.5:1 at 3.060 GHz.