IPB048N15N5
Infineon
The Infineon IPB048N15N5 is a 150V N-channel MOSFET designed for high-frequency switching applications. It offers very low on-resistance and a high operating temperature.
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16 pcs
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16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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| Power Dissipation |
The Infineon 025N08N is an N-channel MOSFET belonging to the OptiMOS 3 family, designed for high-performance switching applications. It features a drain-source breakdown voltage of 80V and a very low on-resistance, with a maximum of 2.5 mΩ at 100A (VGS=10V) and 3.9 mΩ at 50A (VGS=6V).
This MOSFET offers excellent gate charge x R DS(on) product (FOM) and operates at temperatures up to 175°C. It is suitable for high-frequency switching and synchronous rectification.
The device is housed in a PG-TO 263 surface-mount package. It is Pb-free and Halogen-free compliant, meeting RoHS3 and IEC61249-2-21 standards.
Key electrical characteristics include a gate threshold voltage typically between 2V and 3.5V, a continuous drain current of 120A at 25°C, and a pulsed drain current of up to 480A. The thermal resistance from junction to case is a low 0.5 K/W.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 80V.
The maximum on-resistance is 2.5 mΩ at VGS=10V and ID=100A.
The continuous drain current is 120A at 25°C.
The operating and storage temperature range is -55°C to 175°C.
The 025N08N is supplied in a PG-TO 263 package.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.