| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
577 pcs
|
577 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Recovery Time |
The Infineon IPB107N20NA is an N-channel MOSFET belonging to the OptiMOSTM3 power transistor family. It is designed for applications requiring high-frequency switching and synchronous rectification.
Key electrical characteristics include a drain-source breakdown voltage of 200V and a maximum continuous drain current of 88A at 25°C. The on-state resistance (RDS(on)) is as low as 9.6mΩ at VGS=10V and ID=88A for the TO263 package. The device operates over a wide temperature range from -55°C to 175°C.
This MOSFET features excellent gate charge x R DS(on) product (FOM) and is qualified according to AEC Q101. It is Pb-free and RoHS compliant, making it suitable for various industrial and automotive applications. The package type is PG-TO263-3, designed for surface mounting.
Additional features include a very low on-resistance, high operating temperature capability, and halogen-free compliance according to IEC61249-2-21.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 200V.
The typical gate threshold voltage is 3V.
The maximum continuous drain current at 25°C is 88A.
The maximum on-state resistance for the TO263 package is 10.7mΩ.
The operating temperature range is -55°C to 175°C.
The IPB107N20NA is supplied in the PG-TO263-3 package.