| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,645 pcs
|
2645 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
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| Power Dissipation |
The Infineon IPB110P06LM is a P-channel OptiMOSTM power MOSFET designed for industrial applications. It features a drain-source voltage (VDS) of -60V and a very low on-resistance (RDS(on)) of 11mΩ, typically measured at VGS=4.5V and ID=-100A. This MOSFET is 100% avalanche tested and operates in enhancement mode.
With a continuous drain current (ID) rating of -100A at 25°C and -78A at 100°C (VGS=-10V), it offers robust performance. The device is qualified according to JEDEC standards for industrial applications. It is packaged in a D2PAK (PG-TO 263-3) surface mount package, suitable for various power management circuits.
The operating temperature range is from -55°C to 175°C. The MOSFET is Pb-free, RoHS compliant, and halogen-free according to IEC61249-2-21.
-60 V
11 mΩ
-100 A
PG-TO 263-3
RoHS3 Compliant
1 Unlimited
Yes