| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,565 pcs
|
1565 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
950 pcs
|
950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| SVHC Present |
The IPB117N20NFD is a 200V N-Channel power MOSFET manufactured by Infineon. It offers a maximum on-resistance of 11.7 mOhm at VGS=10V and a continuous drain current of 84A at TC=25°C, with a pulsed current capability of 336A. The device is rated for a maximum power dissipation of 300W at 25°C case temperature.
It features a single-pulse avalanche energy rating of 375mJ and a reverse diode peak dv/dt of 60 kV/µs. The operating junction temperature range is -55°C to 175°C, making it suitable for demanding environments.
The MOSFET is available in a surface-mount PG-TO 263-3 (D2PAK) package. The device is halogen-free and has lead-free plating, complying with current environmental standards.
200 V.
11.7 mOhm maximum at VGS=10V and ID=84A.
84 A.
300 W at Tc=25°C.
-55°C to 175°C.
PG-TO 263-3 (D2PAK) surface-mount package.
375 mJ single pulse at ID=67A and RGS=25 Ohm.