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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
PMBT2222,235
PMBT2222,235
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Nexperia USA Inc.
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 250MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 1.6V @ 50mA, 500mA 30 V
2SA1462-T1B-A
2SA1462-T1B-A
Renesas
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BCW66HVL
BCW66HVL
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Nexperia USA Inc.
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 - - - - - - - - 800 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 450mV @ 50mA, 500mA 45 V
BCW68HVL
BCW68HVL
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Nexperia USA Inc.
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 - - - - - - - - 800 mA 250 @ 100mA, 1V - - - 80MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 450mV @ 50mA, 500mA 45 V
BC817-40Q-13-F
BC817-40Q-13-F
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Diodes Incorporated
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - NPN 700mV @ 50mA, 500mA 45 V
PMBT2222,215
PMBT2222,215
Download Datasheet for PMBT2222,215
Nexperia USA Inc.
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 250MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 1.6V @ 50mA, 500mA 30 V
BC817-25W,135
BC817-25W,135
Download Datasheet for BC817-25W,135
Nexperia USA Inc.
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 700mV @ 50mA, 500mA 45 V
PMBTA42,185
PMBTA42,185
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 40 @ 30mA, 10V - - - 50MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 500mV @ 2mA, 20mA 300 V
PMBTA42,235
PMBTA42,235
Download Datasheet for PMBTA42,235
Nexperia USA Inc.
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 - - - - - - - - 100 mA 40 @ 30mA, 10V - - - 50MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 500mV @ 2mA, 20mA 300 V
TBC857B,LM
TBC857B,LM
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Toshiba
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 - - - - - - - - 150 mA 210 @ 2mA, 5V - - - 80MHz - - Surface Mount 150°C (TJ) 320 mW - - SOT-23-3 - PNP 650mV @ 100mA, 5mA 50 V
PMBT3904M,315
PMBT3904M,315
Download Datasheet for PMBT3904M,315
Nexperia USA Inc.
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount 150°C (TJ) 590 mW - - SOT-883 - NPN 300mV @ 5mA, 50mA 40 V
MMBTA92LT3G
MMBTA92LT3G
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On Semiconductor
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 (TO-236) - PNP 500mV @ 2mA, 20mA 300 V
2SC6026MFVGR,L3F
2SC6026MFVGR,L3F
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Toshiba
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 - - - - - - - - 150 mA 200 @ 2mA, 6V - - - 60MHz - - Surface Mount 150°C (TJ) 150 mW - - VESM - NPN 250mV @ 10mA, 100mA 50 V
2SC2853E-E
2SC2853E-E
Renesas
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PMST3904,135
PMST3904,135
Download Datasheet for PMST3904,135
Nexperia USA Inc.
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 300mV @ 5mA, 50mA 40 V
SST3904HZGT116
SST3904HZGT116
ROHM Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - NPN 300mV @ 5mA, 50mA 40 V
BC857BHZGT116
BC857BHZGT116
Download Datasheet for BC857BHZGT116
ROHM Semiconductor
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 - - - - - - - - 100 mA 210 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - PNP 650mV @ 5mA, 100mA 45 V
2SC4673D-TD-E
2SC4673D-TD-E
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2SC2712-GR,LF
2SC2712-GR,LF
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Toshiba
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 - - - - - - - - 150 mA 70 @ 2mA, 6V - - - 80MHz - - Surface Mount 125°C (TJ) 150 mW - - S-Mini - NPN 250mV @ 10mA, 100mA 50 V
BCX71J,235
BCX71J,235
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 250 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 550mV @ 1.25mA, 50mA 45 V
2SC2712-OTE85LF
2SC2712-OTE85LF
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Toshiba
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 - - - - - - - - 150 mA 70 @ 2mA, 6V - - - 80MHz - - Surface Mount 125°C (TJ) 150 mW - - TO-236 - NPN 250mV @ 10mA, 100mA 50 V
2SC4738-GR,LF
2SC4738-GR,LF
Toshiba
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 - - - - - - - - 150 mA 200 @ 2mA, 6V - - - 80MHz - - Surface Mount 125°C (TJ) 100 mW - - SSM - NPN 250mV @ 10mA, 100mA 50 V
2SC4738-Y,LF
2SC4738-Y,LF
Toshiba
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 - - - - - - - - 150 mA 120 @ 2mA, 6V - - - 80MHz - - Surface Mount 125°C (TJ) 100 mW - - SSM - NPN 250mV @ 10mA, 100mA 50 V
2PD601BRL,215
2PD601BRL,215
Download Datasheet for 2PD601BRL,215
Nexperia USA Inc.
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 - - - - - - - - 200 mA 210 @ 2mA, 10V - - - 250MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 250mV @ 10mA, 100mA 50 V
BC816-16WX
BC816-16WX
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 400mV @ 50mA, 500mA 80 V
BC847AWT1G
BC847AWT1G
Download Datasheet for BC847AWT1G
On Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SC-70-3 (SOT323) - NPN 600mV @ 5mA, 100mA 45 V
MMBT3906 RFG
MMBT3906 RFG
Taiwan Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23 - PNP 400mV @ 5mA, 50mA 40 V
BC816-25HVL
BC816-25HVL
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount 175°C (TJ) 300 mW - - TO-236AB - NPN 400mV @ 50mA, 500mA 80 V
MMBT3904 RFG
MMBT3904 RFG
Taiwan Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - NPN 300mV @ 5mA, 50mA 40 V
SST2907AHZGT116
SST2907AHZGT116
ROHM Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - PNP 1.6V @ 50mA, 500mA 60 V
SST2222AHZGT116
SST2222AHZGT116
ROHM Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - NPN 1V @ 50mA, 500mA 40 V
BC849C,235
BC849C,235
Nexperia USA Inc.
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 600mV @ 5mA, 100mA 30 V
BC850B,235
BC850B,235
Nexperia USA Inc.
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 600mV @ 5mA, 100mA 45 V
2SC3736-T1-AZ
2SC3736-T1-AZ
Renesas
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PMSS3906,115
PMSS3906,115
Download Datasheet for PMSS3906,115
Nexperia USA Inc.
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 - - - - - - - - 100 mA 100 @ 10mA, 1V - - - 150MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - PNP 400mV @ 5mA, 50mA 40 V
PMSS3904,115
PMSS3904,115
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 100 @ 10mA, 1V - - - 180MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 300mV @ 5mA, 50mA 40 V
PMSS3904,135
PMSS3904,135
Download Datasheet for PMSS3904,135
Nexperia USA Inc.
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 - - - - - - - - 100 mA 100 @ 10mA, 1V - - - 180MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 300mV @ 5mA, 50mA 40 V
KSA1142OSTU
KSA1142OSTU
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On Semiconductor
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 - - - - - - - - 100 mA 100 @ 10mA, 5V - - - 180MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126-3 - PNP 500mV @ 5mA, 50mA 180 V
MMBT2222A RFG
MMBT2222A RFG
Taiwan Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - NPN 1V @ 50mA, 500mA 40 V
MMST5551-TP
MMST5551-TP
Download Datasheet for MMST5551-TP
Micro Commercial
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 - - - - - - - - 200 mA 80 @ 10mA, 5V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - NPN 200mV @ 5mA, 50mA 160 V
MMS9013HE3-H-TP
MMS9013HE3-H-TP
Download Datasheet for MMS9013HE3-H-TP
Micro Commercial
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 - - - - - - - - 500 mA 200 @ 500mA, 1V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23 - - 600mV @ 50mA, 500mA 25 V
MSD42WT1G
MSD42WT1G
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On Semiconductor
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 - - - - - - - - 150 mA 40 @ 30mA, 10V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SC-70-3 (SOT323) - NPN 500mV @ 2mA, 20mA 300 V
BC807-40HR
BC807-40HR
Download Datasheet for BC807-40HR
Nexperia USA Inc.
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 80MHz - - Surface Mount -55°C ~ 175°C (TA) 320 mW - - TO-236AB - PNP 700mV @ 50mA, 500mA 45 V
2SB734-AZ
2SB734-AZ
Renesas
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2SA1576U3T106Q
2SA1576U3T106Q
ROHM Semiconductor
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 - - - - - - - - 150 mA 120 @ 1mA, 6V - - - 140MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - PNP 500mV @ 5mA, 50mA 50 V
PBSS2540M,315
PBSS2540M,315
Download Datasheet for PBSS2540M,315
Nexperia USA Inc.
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 - - - - - - - - 500 mA 150 @ 100mA, 2V - - - 450MHz - - Surface Mount 150°C (TJ) 430 mW - - SOT-883 - NPN 250mV @ 50mA, 500mA 40 V
2SC3325-Y,LF
2SC3325-Y,LF
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Toshiba
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 - - - - - - - - 500 mA 120 @ 100mA, 1V - - - 300MHz - - Surface Mount 150°C (TJ) 200 mW - - S-Mini - NPN 250mV @ 10mA, 100mA 50 V
BC847BE6327HTSA1
BC847BE6327HTSA1
Download Datasheet for BC847BE6327HTSA1
Infineon Technologies
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 600mV @ 5mA, 100mA 45 V
BC847CE6327HTSA1
BC847CE6327HTSA1
Download Datasheet for BC847CE6327HTSA1
Infineon Technologies
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 200 mW - - PG-SOT23 - NPN 500mV @ 5mA, 100mA 45 V
BF824,235
BF824,235
Download Datasheet for BF824,235
Nexperia USA Inc.
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 - - - - - - - - 25 mA 25 @ 4mA, 10V - - - 450MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP - 30 V
Showing 18251-18300 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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