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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MPSW13RLRA
MPSW13RLRA
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 1 A 10000 @ 100mA, 5V 125MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MPSW13RLRAG
MPSW13RLRAG
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 1 A 10000 @ 100mA, 5V 125MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) NPN - Darlington 1.5V @ 100µA, 100mA 30 V
MPSW42
MPSW42
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 500 mA 40 @ 30mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) NPN 500mV @ 2mA, 20mA 300 V
MPSW42G
MPSW42G
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 500 mA 40 @ 30mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) NPN 500mV @ 2mA, 20mA 300 V
MPSW45AZL1
MPSW45AZL1
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 1 A 25000 @ 200mA, 5V 100MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) NPN - Darlington 1.5V @ 2mA, 1A 50 V
MPSW45RLRE
MPSW45RLRE
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 1 A 25000 @ 200mA, 5V 100MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) NPN - Darlington 1.5V @ 2mA, 1A 40 V
MPSW45RLREG
MPSW45RLREG
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 1 A 25000 @ 200mA, 5V 100MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) NPN - Darlington 1.5V @ 2mA, 1A 40 V
MPSW51
MPSW51
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 1 A 160 @ 100mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) PNP 700mV @ 100mA, 1A 30 V
MPSW51ARLRA
MPSW51ARLRA
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 1 A 60 @ 100mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) PNP 700mV @ 100mA, 1A 40 V
MSD42WT1
MSD42WT1
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 150 mA 40 @ 30mA, 10V - Surface Mount -55°C ~ 150°C (TJ) 150 mW SC-70-3 (SOT323) NPN 500mV @ 2mA, 20mA 300 V
MPSW51ARLRAG
MPSW51ARLRAG
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 1 A 60 @ 100mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) PNP 700mV @ 100mA, 1A 40 V
MPSW51ARLRP
MPSW51ARLRP
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 1 A 60 @ 100mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) PNP 700mV @ 100mA, 1A 40 V
MPSW51ARLRPG
MPSW51ARLRPG
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 1 A 60 @ 100mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) PNP 700mV @ 100mA, 1A 40 V
MPSW51G
MPSW51G
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 1 A 60 @ 100mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) PNP 700mV @ 100mA, 1A 30 V
MPSW55
MPSW55
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 500 mA 50 @ 250mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) PNP 500mV @ 10mA, 250mA 60 V
MPSW55G
MPSW55G
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 500 mA 50 @ 250mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) PNP 500mV @ 10mA, 250mA 60 V
MPSW55RLRA
MPSW55RLRA
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 500 mA 50 @ 250mA, 1V 50MHz Through Hole - 1 W TO-92 (TO-226) PNP 500mV @ 10mA, 250mA 60 V
MPSW55RLRAG
MPSW55RLRAG
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 500 mA 50 @ 250mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) PNP 500mV @ 10mA, 250mA 60 V
MPSW56RLRA
MPSW56RLRA
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 500 mA 50 @ 250mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) PNP 500mV @ 10mA, 250mA 80 V
MPSW56RLRP
MPSW56RLRP
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 500 mA 50 @ 250mA, 1V 50MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) PNP 500mV @ 10mA, 250mA 80 V
MPSW63RLRA
MPSW63RLRA
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSW63RLRAG
MPSW63RLRAG
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) PNP - Darlington 1.5V @ 100µA, 100mA 30 V
MPSW92RLRA
MPSW92RLRA
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 500 mA 25 @ 30mA, 10V 50MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-92 (TO-226) PNP 500mV @ 2mA, 20mA 300 V
MSA1162YT1
MSA1162YT1
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 100 mA 120 @ 2mA, 6V 80MHz Surface Mount 150°C (TJ) 200 mW SC-59 PNP 500mV @ 10mA, 100mA 50 V
MSA1162YT1G
MSA1162YT1G
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 100 mA 120 @ 2mA, 6V 80MHz Surface Mount 150°C (TJ) 200 mW SC-59 PNP 500mV @ 10mA, 100mA 50 V
MSB1218A-RT1
MSB1218A-RT1
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 100 mA 210 @ 2mA, 10V - Surface Mount 150°C (TJ) 150 mW SC-70-3 (SOT323) PNP 500mV @ 10mA, 100mA 45 V
MSB710-RT1
MSB710-RT1
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 500 mA 120 @ 150mA, 10V - Surface Mount 150°C (TJ) 200 mW SC-59 PNP 600mV @ 30mA, 300mA 50 V
MSB710-RT1G
MSB710-RT1G
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 500 mA 120 @ 150mA, 10V - Surface Mount 150°C (TJ) 200 mW SC-59 PNP 600mV @ 30mA, 300mA 50 V
MSB92T1
MSB92T1
On Semiconductor
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 150 mA 25 @ 30mA, 10V 50MHz Surface Mount - 150 mW SC-59 PNP 500mV @ 2mA, 20mA 300 V
MSC2712YT1G
MSC2712YT1G
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 100 mA 120 @ 2mA, 6V 50MHz Surface Mount 150°C (TJ) 200 mW SC-59 NPN 500mV @ 10mA, 100mA 50 V
MSD1328-RT1G
MSD1328-RT1G
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 500 mA 200 @ 500mA, 2V - Surface Mount 150°C (TJ) 200 mW SC-59 NPN 400mV @ 20mA, 500mA 20 V
MSD1328-ST1G
MSD1328-ST1G
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 500 mA 300 @ 500mA, 2V - Surface Mount 150°C (TJ) 200 mW SC-59 NPN 400mV @ 20mA, 500mA 20 V
2SB560E-MP-AE-SY
2SB560E-MP-AE-SY
Sanyo Denki
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NJD2873
NJD2873
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 2 A 120 @ 500mA, 2V 65MHz Surface Mount - 15 W DPAK NPN 300mV @ 50mA, 1A 50 V
NJD2873RL
NJD2873RL
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 2 A 120 @ 500mA, 2V 65MHz Surface Mount -65°C ~ 175°C (TJ) 1.68 W DPAK NPN 300mV @ 50mA, 1A 50 V
NJD2873T4
NJD2873T4
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 2 A 120 @ 500mA, 2V 65MHz Surface Mount - 15 W DPAK NPN 300mV @ 50mA, 1A 50 V
NJL21193DG
NJL21193DG
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 16 A 25 @ 8A, 5V 4MHz Through Hole -65°C ~ 150°C (TJ) 200 W TO-264 PNP 4V @ 3.2A, 16A 250 V
NJL21194DG
NJL21194DG
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 16 A 25 @ 8A, 5V 4MHz Through Hole -65°C ~ 150°C (TJ) 200 W TO-264 NPN 4V @ 3.2A, 16A 250 V
NJL4281DG
NJL4281DG
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 15 A 80 @ 5A, 5V 35MHz Through Hole -65°C ~ 150°C (TJ) 230 W TO-264 NPN + Diode (Isolated) 1V @ 800mA, 8A 350 V
NJL4302DG
NJL4302DG
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 15 A 80 @ 5A, 5V 35MHz Through Hole -65°C ~ 150°C (TJ) 230 W TO-264 PNP 1V @ 800mA, 8A 350 V
NJVBDX53C
NJVBDX53C
On Semiconductor
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 8 A 750 @ 3A, 3V - Through Hole - 65 W TO-220 NPN - Darlington 2V @ 12mA, 3A 100 V
NSCT2222ALT1G
NSCT2222ALT1G
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 600 mA 100 @ 150mA, 10V 300MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) NPN 1V @ 50mA, 500mA 40 V
NSCT2222ALT3G
NSCT2222ALT3G
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 600 mA 100 @ 150mA, 10V 300MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) NPN 1V @ 50mA, 500mA 40 V
NSCT2907ALT1G
NSCT2907ALT1G
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 600 mA 100 @ 150mA, 10V 200MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) PNP 1.6V @ 50mA, 500mA 60 V
BUB941ZT
BUB941ZT
STMicroelectronics
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 15 A 300 @ 5A, 10V - Surface Mount 175°C (TJ) 150 W D²PAK NPN - Darlington 1.8V @ 250mA, 10A 350 V
NSCT2907ALT3G
NSCT2907ALT3G
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 600 mA 100 @ 150mA, 10V 200MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) PNP 1.6V @ 50mA, 500mA 60 V
NSCT3904LT1G
NSCT3904LT1G
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 200 mA 100 @ 10mA, 1V 300MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) NPN 300mV @ 5mA, 50mA 40 V
NSCT3904LT3G
NSCT3904LT3G
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 200 mA 100 @ 10mA, 1V 300MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) NPN 300mV @ 5mA, 50mA 40 V
NSCT3906LT1G
NSCT3906LT1G
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 200 mA 100 @ 10mA, 1V 250MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) PNP 400mV @ 5mA, 50mA 40 V
NSCT3906LT3G
NSCT3906LT3G
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 200 mA 100 @ 10mA, 1V 250MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) PNP 400mV @ 5mA, 50mA 40 V
Showing 18351-18400 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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