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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
PN4249
PN4249
NTE Electronics
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BCU81-AA
BCU81-AA
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2SA1208S-AE
2SA1208S-AE
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ECH8504-TL-H
ECH8504-TL-H
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BFU530215
BFU530215
NXP Semiconductors
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2SB1119S-TD-E
2SB1119S-TD-E
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SZT1009T1
SZT1009T1
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2SB1123S-TD-EX
2SB1123S-TD-EX
Sanyo Denki
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2SA1450S-AA
2SA1450S-AA
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NZT6717-ON
NZT6717-ON
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 - - - - - - - - 1.2 A 80 @ 50mA, 1V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-223-4 - NPN 350mV @ 10mA, 250mA 80 V
PZTA14,115
PZTA14,115
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount 150°C (TJ) 1.25 W - - SOT-223 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
PZTA14,135
PZTA14,135
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount 150°C (TJ) 1.25 W - - SOT-223 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
50A02SP
50A02SP
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TN6729A
TN6729A
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On Semiconductor
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 - - - - - - - - 1 A 50 @ 250mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - PNP 500mV @ 10mA, 250mA 80 V
KSB744AYSTU
KSB744AYSTU
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On Semiconductor
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 - - - - - - - - 3 A 160 @ 500mA, 5V - - - 45MHz - - Through Hole 150°C (TJ) 1 W - - TO-126-3 - PNP 2V @ 150mA, 1.5A 60 V
TIP31B
TIP31B
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On Semiconductor
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - NPN 1.2V @ 375mA, 3A 80 V
MPS6518
MPS6518
NTE Electronics
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 - - - - - - - - 200 mA 150 @ 2mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 5mA, 50mA 40 V
MPSA93
MPSA93
NTE Electronics
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 400mV @ 2mA, 20mA 200 V
2N4400
2N4400
NTE Electronics
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 - - - - - - - - 600 mA 50 @ 150mA, 1V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 750mV @ 50mA, 500mA 40 V
2N5550
2N5550
NTE Electronics
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 250mV @ 5mA, 50mA 140 V
BCV62B/DG/B2215
BCV62B/DG/B2215
NXP Semiconductors
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BUD43B
BUD43B
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2SC3331S
2SC3331S
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2SA1246T-AA
2SA1246T-AA
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BF199RL1
BF199RL1
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2SA1346-SSH-AC
2SA1346-SSH-AC
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BFR505215
BFR505215
NXP Semiconductors
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BCP69-25E6327
BCP69-25E6327
Infineon Technologies
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 - - - - - - - - 1 A 160 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 3 W - - PG-SOT223-4 - - 500mV @ 100mA, 1A 20 V
BSP52E6327HTSA1
BSP52E6327HTSA1
Infineon Technologies
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 - - - - - - - - 1 A 2000 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.5 W - - PG-SOT223-4 - NPN - Darlington 1.8V @ 1mA, 1A 80 V
2SA1707S-AN-FS
2SA1707S-AN-FS
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 - - - - - - - - 3 A 140 @ 100mA, 2V - - - 150MHz - - Through Hole 150°C (TJ) 1 W - - 3-NMP - PNP 700mV @ 100mA, 2A 50 V
PXT4403,115
PXT4403,115
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Nexperia USA Inc.
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 - - - - - - - - 600 mA 100 @ 150mA, 2V - - - 200MHz - - Surface Mount 150°C (TJ) 1.1 W - - SOT-89 - PNP 750mV @ 50mA, 500mA 40 V
PBSS4520X,146
PBSS4520X,146
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Nexperia USA Inc.
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 - - - - - - - - 5 A 250 @ 2A, 2V - - - 125MHz - - Surface Mount 150°C (TJ) 550 mW - - SOT-89 - NPN 220mV @ 500mA, 5A 20 V
PBSS4520X,135
PBSS4520X,135
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Nexperia USA Inc.
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 - - - - - - - - 5 A 250 @ 2A, 2V - - - 125MHz - - Surface Mount 150°C (TJ) 550 mW - - SOT-89 - NPN 220mV @ 500mA, 5A 20 V
2SCR553PFRAT100
2SCR553PFRAT100
ROHM Semiconductor
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 - - - - - - - - 2 A 180 @ 50mA, 2V - - - 360MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - NPN 350mV @ 35mA, 700mA 50 V
2SD1664T100P
2SD1664T100P
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ROHM Semiconductor
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 - - - - - - - - 1 A 82 @ 100mA, 3V - - - 150MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - NPN 400mV @ 50mA, 500mA 32 V
2SC2873-Y(TE12L,ZC
2SC2873-Y(TE12L,ZC
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Toshiba
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 120MHz - - Surface Mount 150°C (TJ) 500 mW - - PW-MINI - NPN 500mV @ 50mA, 1A 50 V
TIP29B
TIP29B
Harris Semiconductor
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 - - - - - - - - 1 A 15 @ 1A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220-3 - NPN 700mV @ 125mA, 1A 80 V
FJP3307DH2TU
FJP3307DH2TU
On Semiconductor
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 - - - - - - - - 8 A 26 @ 2A, 5V - - - - - - Through Hole 150°C (TJ) 80 W - - TO-220-3 - NPN 3V @ 2A, 8A 400 V
KSC5302DTU
KSC5302DTU
On Semiconductor
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 - - - - - - - - 2 A 10 @ 1A, 1V - - - - - - Through Hole 150°C (TJ) 50 W - - TO-220-3 - NPN 500mV @ 200mA, 1A 400 V
2SD1913S
2SD1913S
Sanyo Denki
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 - - - - - - - - 3 A 140 @ 500mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 2 W - - TO-220ML - NPN 1V @ 200mA, 2A 60 V
FPN660A
FPN660A
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On Semiconductor
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 - - - - - - - - 3 A 250 @ 500mA, 2V - - - 75MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226 - PNP 400mV @ 200mA, 2A 60 V
TIP32A
TIP32A
Harris Semiconductor
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 - - - - - - - - 3 A 25 @ 1A, 4V - - - 3MHz - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - PNP 1.2V @ 375mA, 3A 60 V
MPSA20
MPSA20
NTE Electronics
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 - - - - - - - - 100 mA 40 @ 5mA, 10V - - - 125MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 250mV @ 1mA, 10mA 40 V
MPSA56
MPSA56
NTE Electronics
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 - - - - - - - - 500 mA 50 @ 10mA, 1V - - - 50MHz - - Through Hole -55°C ~ 175°C (TJ) 625 mW - - TO-92 - PNP 250mV @ 10mA, 100mA 80 V
2SC3779D
2SC3779D
Sanyo Denki
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2SA1370D-AE
2SA1370D-AE
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2SA1728-5-TB-E
2SA1728-5-TB-E
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2SB1126-TD-E
2SB1126-TD-E
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2SB698F
2SB698F
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2SB1132T100P
2SB1132T100P
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ROHM Semiconductor
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 - - - - - - - - 1 A 82 @ 100mA, 3V - - - 150MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - PNP 500mV @ 50mA, 500mA 32 V
Showing 18151-18200 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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