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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N3724
2N3724
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On Semiconductor
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 1 A 60 @ 100mA, 1V - Through Hole - 800 mW TO-5 NPN 750mV @ 100mA, 1A 30 V
2N3962
2N3962
Download Datasheet for 2N3962
On Semiconductor
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 200 mA 100 @ 1mA, 5V - Through Hole - 360 mW TO-18 PNP 400mV @ 5mA, 50mA 60 V
2N4123BU
2N4123BU
Download Datasheet for 2N4123BU
On Semiconductor
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 200 mA 50 @ 2mA, 1V 250MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 300mV @ 5mA, 50mA 30 V
2N4209
2N4209
Download Datasheet for 2N4209
On Semiconductor
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 50 mA 50 @ 10mA, 300mV - Through Hole - 300 mW TO-18 PNP 150mV @ 100µA, 1mA 15 V
MPS2924
MPS2924
Download Datasheet for MPS2924
On Semiconductor
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 100 mA 150 @ 2mA, 10V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN - 25 V
2N5680
2N5680
Download Datasheet for 2N5680
On Semiconductor
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 1 A 40 @ 250mA, 2V - Through Hole - 1 W TO-39 PNP 1V @ 50mA, 500mA 120 V
2N5682
2N5682
Download Datasheet for 2N5682
On Semiconductor
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 1 A 40 @ 250mA, 2V - Through Hole - 1 W TO-39 NPN 1V @ 50mA, 500mA 120 V
2N5961
2N5961
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On Semiconductor
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 100 mA 150 @ 10mA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 200mV @ 500µA, 10mA 60 V
2N2221A
2N2221A
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On Semiconductor
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 800 mA 40 @ 150mA, 10V - Through Hole - 500 mW TO-18 NPN 1V @ 50mA, 500mA 40 V
PN2484
PN2484
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On Semiconductor
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 100 mA 100 @ 10µA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 350mV @ 100µA, 1mA 60 V
PN3251
PN3251
On Semiconductor
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 50 mA - 250MHz Through Hole - 625 mW TO-92-3 PNP - 40 V
PN3566
PN3566
On Semiconductor
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 600 mA 150 @ 10mA, 10V - Through Hole - 625 mW TO-92-3 NPN 1V @ 10mA, 100mA 30 V
PN3569
PN3569
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On Semiconductor
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 500 mA 100 @ 150mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 250mV @ 15mA, 150mA 40 V
PN3640
PN3640
Download Datasheet for PN3640
On Semiconductor
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 200 mA 30 @ 10mA, 300mV 500MHz Through Hole -55°C ~ 150°C (TJ) 350 mW TO-92-3 PNP 600mV @ 5mA, 50mA 12 V
PN4121
PN4121
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On Semiconductor
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 100 mA 60 @ 1mA, 1V - Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 300mV @ 5mA, 50mA 40 V
PN4250A
PN4250A
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 500 mA 250 @ 100µA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 250mV @ 500µA, 10mA 60 V
PN4275
PN4275
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On Semiconductor
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 200 mA 35 @ 10mA, 1V - Through Hole -55°C ~ 150°C (TJ) 350 mW TO-92-3 NPN 500mV @ 10mA, 100mA 15 V
PN4888
PN4888
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 100 mA 40 @ 10mA, 10V - Through Hole - 625 mW TO-92-3 PNP 500mV @ 1mA, 10mA 150 V
PN5133
PN5133
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On Semiconductor
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 - 60 @ 1mA, 5V - Through Hole - 625 mW TO-92S NPN 400mV @ 100µA, 1mA 18 V
PN5135
PN5135
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 200 mA 50 @ 10mA, 10V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 1V @ 10mA, 100mA 25 V
PN5139
PN5139
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On Semiconductor
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 100 mA 40 @ 1mA, 10V - Through Hole - 625 mW TO-92S PNP 150mV @ 100µA, 1mA 20 V
PN5142
PN5142
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 500 mA - - Through Hole - - TO-92-3 PNP - 20 V
ZTX576
ZTX576
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Diodes Incorporated
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 1 A 50 @ 300mA, 10V 100MHz Through Hole -55°C ~ 200°C (TJ) 1 W E-Line (TO-92 compatible) PNP 300mV @ 10mA, 100mA 200 V
ZTX755
ZTX755
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Diodes Incorporated
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 1 A 50 @ 500mA, 5V 30MHz Through Hole -55°C ~ 200°C (TJ) 1 W E-Line (TO-92 compatible) PNP 500mV @ 200mA, 1A 150 V
ZTX555
ZTX555
Download Datasheet for ZTX555
Diodes Incorporated
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 1 A 50 @ 300mA, 10V 100MHz Through Hole -55°C ~ 200°C (TJ) 1 W E-Line (TO-92 compatible) PNP 300mV @ 10mA, 100mA 150 V
ZTX796A
ZTX796A
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Diodes Incorporated
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 500 mA 300 @ 10mA, 5V 100MHz Through Hole -55°C ~ 200°C (TJ) 1 W E-Line (TO-92 compatible) PNP 300mV @ 20mA, 200mA 200 V
BCX19TA
BCX19TA
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Diodes Incorporated
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 500 mA 100 @ 100mA, 1V 200MHz Surface Mount -55°C ~ 150°C (TJ) 330 mW SOT-23-3 NPN 620mV @ 50mA, 500mA 45 V
FMMTA06TA
FMMTA06TA
Diodes Incorporated
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 500 mA 50 @ 10mA, 1V 100MHz Surface Mount -55°C ~ 150°C (TJ) 330 mW SOT-23-3 NPN 250mV @ 10mA, 100mA 80 V
FMMTA56TA
FMMTA56TA
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Diodes Incorporated
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 500 mA 50 @ 100mA, 1V 100MHz Surface Mount -55°C ~ 150°C (TJ) 330 mW SOT-23-3 PNP 250mV @ 10mA, 100mA 80 V
FMMT2907ATA
FMMT2907ATA
Download Datasheet for FMMT2907ATA
Diodes Incorporated
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 600 mA 100 @ 150mA, 10V 200MHz Surface Mount -55°C ~ 150°C (TJ) 330 mW SOT-23-3 PNP 1.6V @ 50mA, 500mA 60 V
FMMTA14TA
FMMTA14TA
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Diodes Incorporated
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 300 mA 20000 @ 100mA, 5V - Surface Mount -55°C ~ 150°C (TJ) 330 mW SOT-23-3 NPN - Darlington 900mV @ 100µA, 100mA 40 V
2N5551
2N5551
Diodes Incorporated
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 200 mA 80 @ 10mA, 5V 300MHz Through Hole - 625 mW TO-92 NPN 200mV @ 5mA, 50mA 160 V
PMBS3906,235
PMBS3906,235
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Nexperia USA Inc.
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 100 mA 100 @ 10mA, 1V 150MHz Surface Mount 150°C (TJ) 250 mW TO-236AB PNP 400mV @ 5mA, 50mA 40 V
BC69-25PAS115
BC69-25PAS115
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NXP Semiconductors
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MMBTA56-TP
MMBTA56-TP
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Micro Commercial Co.
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 500 mA 100 @ 100mA, 1V 50MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23 PNP 250mV @ 10mA, 100mA 80 V
BC856AW,115
BC856AW,115
Download Datasheet for BC856AW,115
Nexperia USA Inc.
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 100 mA 125 @ 2mA, 5V 100MHz Surface Mount 150°C (TJ) 200 mW SOT-323 PNP 600mV @ 5mA, 100mA 65 V
BC858W,115
BC858W,115
Download Datasheet for BC858W,115
Nexperia USA Inc.
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 100 mA 125 @ 2mA, 5V 100MHz Surface Mount 150°C (TJ) 200 mW SOT-323 PNP 600mV @ 5mA, 100mA 30 V
MMST3906-TP
MMST3906-TP
Download Datasheet for MMST3906-TP
Micro Commercial Co.
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 200 mA 100 @ 10mA, 1V 300MHz Surface Mount -55°C ~ 150°C (TJ) 200 mW SOT-323 PNP 300mV @ 5mA, 50mA 40 V
BC847AQBZ
BC847AQBZ
Download Datasheet for BC847AQBZ
Nexperia USA Inc.
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 100 mA 110 @ 2mA, 5V 100MHz Surface Mount, Wettable Flank 150°C (TJ) 340 mW DFN1110D-3 NPN 400mV @ 5mA, 100mA 45 V
BC847CQBZ
BC847CQBZ
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Nexperia USA Inc.
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 100 mA 420 @ 2mA, 5V 100MHz Surface Mount, Wettable Flank 150°C (TJ) 340 mW DFN1110D-3 NPN 400mV @ 5mA, 100mA 45 V
BC846BW-TP
BC846BW-TP
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Micro Commercial Co.
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 100 mA 200 @ 2mA, 5V 100MHz Surface Mount -65°C ~ 150°C - SOT-323 NPN 600mV @ 5mA, 100mA 65 V
BC847BW-TP
BC847BW-TP
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Micro Commercial Co.
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 100 mA 200 @ 2mA, 5V 100MHz Surface Mount -65°C ~ 150°C (TJ) - SOT-323 NPN 600mV @ 5mA, 100mA 45 V
MMSTA06Q-7-F
MMSTA06Q-7-F
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Diodes Incorporated
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 500 mA 100 @ 100mA, 1V 100MHz Surface Mount -55°C ~ 150°C (TJ) 200 mW SOT-323 NPN 250mV @ 10mA, 100mA 80 V
MMST2907A-TP
MMST2907A-TP
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Micro Commercial Co.
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 600 mA 100 @ 150mA, 10V 200MHz Surface Mount -55°C ~ 150°C (TJ) 200 mW SOT-323 PNP 600mV @ 50mA, 500mA 60 V
BC807-40HVL
BC807-40HVL
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Nexperia USA Inc.
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 500 mA 250 @ 100mA, 1V 80MHz Surface Mount 175°C (TJ) 320 mW TO-236AB PNP 700mV @ 50mA, 500mA 45 V
BC807-40HZ
BC807-40HZ
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Nexperia USA Inc.
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 500 mA 250 @ 100mA, 1V 80MHz Surface Mount 175°C (TJ) 320 mW TO-236AB PNP 700mV @ 50mA, 500mA 45 V
BC817-40/6215
BC817-40/6215
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NXP Semiconductors
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 - - - - - - - - - -
2SB1302T-TD-E
2SB1302T-TD-E
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On Semiconductor
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 5 A 100 @ 500mA, 2V 320MHz Surface Mount 150°C (TJ) 1.3 W PCP PNP 500mV @ 60mA, 3A 20 V
MMST4124-7-F
MMST4124-7-F
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Diodes Incorporated
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 200 mA 120 @ 2mA, 1V 300MHz Surface Mount -55°C ~ 150°C (TJ) 200 mW SOT-323 NPN 300mV @ 5mA, 50mA 25 V
PMSTA42,115
PMSTA42,115
Nexperia USA Inc.
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 100 mA 40 @ 30mA, 10V 50MHz Surface Mount 150°C (TJ) 200 mW SOT-323 NPN 500mV @ 2mA, 20mA 300 V
Showing 18151-18200 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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