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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2C3763-MSCLW
2C3763-MSCLW
Microchip Technology
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2C3765-MSCLW
2C3765-MSCLW
Microchip Technology
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2C3762
2C3762
Microchip Technology
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2N2222AL
2N2222AL
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 - NPN 1V @ 50mA, 500mA 50 V
JAN2N4150S
JAN2N4150S
Microchip Technology
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 - - - - - - - - 10 A 40 @ 5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 2.5V @ 1A, 10A 70 V
JAN2N4029
JAN2N4029
Microchip Technology
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - - - - Through Hole -55°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - PNP 1V @ 100mA, 1A 80 V
2N2221AUB
2N2221AUB
Microsemi Corporation
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - 3-SMD - NPN 1V @ 50mA, 500mA 50 V
JAN2N2221A
JAN2N2221A
Microsemi Corporation
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JANTX2N3501L
JANTX2N3501L
Microchip Technology
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 - - - - - - - - 300 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - NPN 400mV @ 15mA, 150mA 150 V
2N2221AUB/TR
2N2221AUB/TR
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 1V @ 50mA, 500mA 50 V
2N4033
2N4033
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Microchip Technology
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - - - - Through Hole -55°C ~ 200°C (TJ) 800 mW - - TO-39 (TO-205AD) - PNP 1V @ 100mA, 1A 80 V
JAN2N2906AUB
JAN2N2906AUB
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
JAN2N2906AUB/TR
JAN2N2906AUB/TR
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
JAN2N3485A
JAN2N3485A
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 400 mW - - TO-46 (TO-206AB) - PNP 1.6V @ 50mA, 500mA 60 V
2N5321
2N5321
Microchip Technology
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2C3250A
2C3250A
Microchip Technology
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JANTX2N3019S
JANTX2N3019S
Microchip Technology
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 - - - - - - - - 1 A 50 @ 500mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-39 - NPN 500mV @ 50mA, 500mA 80 V
JAN2N2906AUBC/TR
JAN2N2906AUBC/TR
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UBC - PNP 1.6V @ 50mA, 500mA 60 V
HS2907A/TR
HS2907A/TR
Microchip Technology
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JAN2N3735
JAN2N3735
Microchip Technology
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 - - - - - - - - 1.5 A 20 @ 1A, 1.5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - NPN 900mV @ 100mA, 1A 40 V
JANTX2N2221A
JANTX2N2221A
Microsemi Corporation
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - NPN 1V @ 50mA, 500mA 50 V
2N4029
2N4029
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Microchip Technology
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 - PNP 1V @ 100mA, 1A 80 V
JAN2N2218AL
JAN2N2218AL
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 200°C (TJ) 800 mW - - TO-5 - NPN 1V @ 50mA, 500mA 50 V
MNSKC2N2907A
MNSKC2N2907A
Microchip Technology
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2N2906AUB
2N2906AUB
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
2C5339
2C5339
Microchip Technology
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2C6193
2C6193
Microchip Technology
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JANTX2N4029
JANTX2N4029
Microchip Technology
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - - - - Through Hole -55°C ~ 200°C (TJ) 500 mW - - TO-18 - PNP 1V @ 100mA, 1A 80 V
JAN2N3735L
JAN2N3735L
Microchip Technology
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 - - - - - - - - 1.5 A 20 @ 1A, 1.5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - NPN 900mV @ 100mA, 1A 40 V
MNSKC2N2222A
MNSKC2N2222A
Microchip Technology
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JAN2N3019A
JAN2N3019A
Microchip Technology
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-5AA - NPN 500mV @ 50mA, 500mA 80 V
2C5153-MSCL
2C5153-MSCL
Microchip Technology
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JAN2N2221AL
JAN2N2221AL
Microsemi Corporation
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - NPN 1V @ 50mA, 500mA 50 V
2N2906AUB/TR
2N2906AUB/TR
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
JAN2N3019
JAN2N3019
Microchip Technology
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 - - - - - - - - 1 A 50 @ 500mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-39 - NPN 500mV @ 50mA, 500mA 80 V
JANHCB2N3700
JANHCB2N3700
Microchip Technology
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - NPN 500mV @ 50mA, 500mA 80 V
2C5153
2C5153
Microchip Technology
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2C5154
2C5154
Microchip Technology
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HS2222A
HS2222A
Microchip Technology
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2C4150
2C4150
Microchip Technology
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JANTX2N2218AL
JANTX2N2218AL
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 200°C (TJ) 800 mW - - TO-5 - NPN 1V @ 50mA, 500mA 50 V
2N3057A
2N3057A
Microchip Technology
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 - - - - - - - - 1 A 50 @ 500mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-46-3 - NPN 500mV @ 50mA, 500mA 80 V
2N2218A
2N2218A
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 200°C (TJ) 800 mW - - TO-39 (TO-205AD) - NPN 1.6V @ 50mA, 500mA 30 V
JANTXV2N2222AL
JANTXV2N2222AL
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - NPN 1V @ 50mA, 500mA 50 V
JANHCB2N2907A
JANHCB2N2907A
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 - PNP 1.6V @ 50mA, 500mA 60 V
MNS2N2222AUB/TR
MNS2N2222AUB/TR
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 1V @ 50mA, 500mA 50 V
MNS2N2907AUB/TR
MNS2N2907AUB/TR
Microchip Technology
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HS2222A/TR
HS2222A/TR
Microchip Technology
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JAN2N2219AL
JAN2N2219AL
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole -55°C ~ 200°C (TJ) 800 mW - - TO-5 - NPN 1V @ 50mA, 500mA 50 V
JANHCB2N2222A
JANHCB2N2222A
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C 500 mW - - TO-18 - NPN 1V @ 50mA, 500mA 50 V
Showing 18001-18050 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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