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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
JANSD2N2906AUB
JANSD2N2906AUB
Microchip Technology
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JANSM2N2906AUB
JANSM2N2906AUB
Microchip Technology
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JANSL2N2906AUB
JANSL2N2906AUB
Microchip Technology
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JANS2N3868
JANS2N3868
Microchip Technology
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 - - - - - - - - 3 mA 30 @ 1.5A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 1.5V @ 250mA, 2.5A 60 V
JANS2N3868S
JANS2N3868S
Microchip Technology
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 - - - - - - - - 3 mA 30 @ 1.5A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 1.5V @ 250mA, 2.5A 60 V
2N6676T1
2N6676T1
Microchip Technology
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JANSR2N2906AUB/TR
JANSR2N2906AUB/TR
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JANSM2N2906AUB/TR
JANSM2N2906AUB/TR
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JANSL2N2906AUB/TR
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JANSP2N2906AUB/TR
JANSP2N2906AUB/TR
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JANSD2N2906AUB/TR
JANSD2N2906AUB/TR
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JANSF2N3637UB
JANSF2N3637UB
Microchip Technology
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 - - - - - - - - 1 A 100 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - UB - PNP 600mV @ 5mA, 50mA 175 V
JANSD2N2369AUB
JANSD2N2369AUB
Microchip Technology
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 - - - - - - - - 400nA 40 @ 10mA, 1V - - - - - - Surface Mount -65°C ~ 200°C 400 mW - - UB - NPN 450mV @ 10mA, 100mA 20 V
JANSF2N2369AUB
JANSF2N2369AUB
Microchip Technology
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 - - - - - - - - 400 nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UB - NPN 450mV @ 10mA, 100mA 15 V
JANSD2N2369AUB/TR
JANSD2N2369AUB/TR
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JANSP2N2369AUB
JANSP2N2369AUB
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JAN2N5302
JAN2N5302
Microchip Technology
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 - - - - - - - - 30 A 15 @ 15A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 5 W - - TO-3 (TO-204AA) - NPN 3V @ 6A, 30A 60 V
BC858BT
BC858BT
Yangzhou Yangjie Electronic Technology Co.,Ltd
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JAN2N5303
JAN2N5303
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 - - - - - - - - 10 µA 15 @ 10A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 20 W - - TO-3 - NPN 650mV @ 5mA, 100mA 60 V
JANSF2N2369AUB/TR
JANSF2N2369AUB/TR
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 - - - - - - - - 400 nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 360 mW - - UB - NPN 450mV @ 10mA, 100mA 15 V
JANSM2N2369AUB
JANSM2N2369AUB
Microchip Technology
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 - - - - - - - - 400nA 40 @ 10mA, 1V - - - - - - Surface Mount -65°C ~ 200°C 400 mW - - UB - NPN 450mV @ 10mA, 100mA 20 V
JANSM2N2369AUB/TR
JANSM2N2369AUB/TR
Microchip Technology
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C 360 mW - - UB - NPN 450mV @ 10mA, 100mA 20 V
JANSL2N2369AUB/TR
JANSL2N2369AUB/TR
Microchip Technology
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C 360 mW - - UB - NPN 450mV @ 10mA, 100mA 20 V
JANSP2N2369AUB/TR
JANSP2N2369AUB/TR
Microchip Technology
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 - - - - - - - - 400nA 20 @ 100mA, 1V - - - - - - Surface Mount -65°C ~ 200°C 360 mW - - UB - NPN 450mV @ 10mA, 100mA 20 V
JANSR2N2906AUB
JANSR2N2906AUB
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
JANSL2N2221AUA
JANSL2N2221AUA
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 650 mW - - UA - NPN 1V @ 50mA, 500mA 50 V
JANSM2N2221AUA
JANSM2N2221AUA
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 650 mW - - UA - NPN 1V @ 50mA, 500mA 50 V
JANSD2N2221AUA
JANSD2N2221AUA
Microchip Technology
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JANSP2N2221AUA
JANSP2N2221AUA
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 650 mW - - UA - NPN 1V @ 50mA, 500mA 50 V
JAN2N2432AUB
JAN2N2432AUB
Microchip Technology
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 - - - - - - - - 100 mA - - - - - - - Surface Mount 200°C (TJ) - - - UB - NPN - 30 V
JANSR2N2221AUA/TR
JANSR2N2221AUA/TR
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 650 mW - - UA - NPN 1V @ 50mA, 500mA 50 V
JANSD2N2221AUA/TR
JANSD2N2221AUA/TR
Microchip Technology
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JANSD2N2221AUB/TR
JANSD2N2221AUB/TR
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 1V @ 50mA, 500mA 50 V
JANSM2N2221AUA/TR
JANSM2N2221AUA/TR
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 650 mW - - UA - NPN 1V @ 50mA, 500mA 50 V
JANSP2N2221AUB
JANSP2N2221AUB
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 1V @ 50mA, 500mA 50 V
JANSR2N2221AUA
JANSR2N2221AUA
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 650 mW - - UA - NPN 1V @ 50mA, 500mA 50 V
JANSM2N2221AUB
JANSM2N2221AUB
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 1V @ 50mA, 500mA 50 V
JANSL2N2221AUB
JANSL2N2221AUB
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 1V @ 50mA, 500mA 50 V
JANSD2N2221AUB
JANSD2N2221AUB
Microchip Technology
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 - - - - - - - - 800 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 1V @ 50mA, 500mA 50 V
2N3998
2N3998
Microchip Technology
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 - - - - - - - - 5 A 40 @ 1A, 2V - - - - - - Stud Mount -65°C ~ 200°C (TJ) 2 W - - TO-59 - NPN 2V @ 500mA, 5A 80 V
2N3999
2N3999
Microchip Technology
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 - - - - - - - - 5 A 80 @ 1A, 2V - - - - - - Stud Mount -65°C ~ 200°C (TJ) 2 W - - TO-59 - NPN 2V @ 500mA, 5A 80 V
JANSR2N2906AUA
JANSR2N2906AUA
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C 500 mW - - UA - PNP 1.6V @ 50mA, 500mA 60 V
JANSR2N2222AUA/TR
JANSR2N2222AUA/TR
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 650 mW - - UA - NPN 1V @ 50mA, 500mA 50 V
2N5416U4
2N5416U4
Microchip Technology
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 - - - - - - - - 1 A 30 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - PNP 2V @ 5mA, 50mA 300 V
JAN2N3867U4
JAN2N3867U4
Microchip Technology
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 - - - - - - - - 3 A 40 @ 1.5A, 2V - - - - - - Surface Mount 200°C (TJ) 1 W - - U4 - PNP 1.5V @ 250mA, 2.5A 40 V
JAN2N3868U4
JAN2N3868U4
Microchip Technology
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 - - - - - - - - 3 mA 30 @ 1.5A, 2V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - UB - PNP 1.5V @ 250mA, 2.5A 60 V
JANSP2N2906AUA
JANSP2N2906AUA
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C 500 mW - - UA - PNP 1.6V @ 50mA, 500mA 60 V
JANSL2N2906AUA
JANSL2N2906AUA
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C 500 mW - - UA - PNP 1.6V @ 50mA, 500mA 60 V
JANSD2N2906AUA
JANSD2N2906AUA
Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C 500 mW - - UA - PNP 1.6V @ 50mA, 500mA 60 V
JANSM2N2906AUA
JANSM2N2906AUA
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C 500 mW - - UA - PNP 1.6V @ 50mA, 500mA 60 V
Showing 13701-13750 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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