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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
CPH6153-P-TL-E
CPH6153-P-TL-E
Download Datasheet for CPH6153-P-TL-E
On Semiconductor
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 3 A 200 @ 100mA, 2V 500MHz Surface Mount 150°C (TJ) 1.3 W 6-CPH PNP 195mV @ 75mA, 1.5A 20 V
MCH3106-S-TL-E
MCH3106-S-TL-E
On Semiconductor
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 3 A 200 @ 500mA, 2V 280MHz Surface Mount - 900 mW 3-MCPH PNP 165mV @ 30mA, 1.5A 12 V
MCH6122-TL-E
MCH6122-TL-E
Download Datasheet for MCH6122-TL-E
On Semiconductor
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 3 A 200 @ 500mA, 2V 400MHz Surface Mount 150°C (TJ) 1 W 6-MCPH PNP 180mV @ 75mA, 1.5A 30 V
MMBT2222AHLT1G
MMBT2222AHLT1G
On Semiconductor
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MMBT2222AHLT1H
MMBT2222AHLT1H
On Semiconductor
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MMBT3904HLT1G
MMBT3904HLT1G
On Semiconductor
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NSVMMBT6517LT1G
NSVMMBT6517LT1G
Download Datasheet for NSVMMBT6517LT1G
On Semiconductor
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 100 mA 20 @ 50mA, 10V 200MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) NPN 1V @ 5mA, 50mA 350 V
PCP1203-P-TD-H
PCP1203-P-TD-H
On Semiconductor
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 1.5 A 200 @ 100mA, 2V 500MHz Surface Mount 150°C (TJ) 1.3 W PCP NPN 225mV @ 15mA, 750mA 30 V
2N3251A
2N3251A
Microsemi Corporation
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 200 mA 100 @ 10mA, 1V - Through Hole -65°C ~ 200°C (TJ) 360 mW TO-39 (TO-205AD) PNP 500mV @ 5mA, 50mA 60 V
2N3778
2N3778
Download Datasheet for 2N3778
Microchip Technology
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 - - - Through Hole - - TO-5 - - -
2N3866
2N3866
Microsemi Corporation
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 400 mA 15 @ 50mA, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 1V @ 10mA, 100mA 30 V
2N5578
2N5578
Microsemi Corporation
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JAN2N1482
JAN2N1482
Microchip Technology
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 1.5 A 35 @ 200mA, 4V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 NPN 750mV @ 10mA, 200mA 55 V
JAN2N6351
JAN2N6351
Microchip Technology
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 5 A 1000 @ 5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-33 NPN - Darlington 2.5V @ 10mA, 5A 150 V
JANS2N5339U3
JANS2N5339U3
Microchip Technology
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 5 A 60 @ 2A, 2V - Surface Mount -65°C ~ 200°C (TJ) 1 W SMD5 NPN 1.2V @ 500mA, 5A 100 V
JANTX2N1613
JANTX2N1613
Microchip Technology
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 500 mA 40 @ 150mA, 10V - Through Hole -65°C ~ 200°C (TJ) 800 mW TO-39 NPN 1.5V @ 15mA, 150mA 30 V
JANTXV2N5662
JANTXV2N5662
Microchip Technology
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 2 A 40 @ 500mA, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 NPN 800mV @ 400mA, 2A 200 V
MMBT6517LT3G
MMBT6517LT3G
Download Datasheet for MMBT6517LT3G
On Semiconductor
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 100 mA 20 @ 50mA, 10V 200MHz Surface Mount -55°C ~ 150°C (TJ) 225 mW SOT-23-3 (TO-236) NPN 1V @ 5mA, 50mA 350 V
STBV32-AP
STBV32-AP
STMicroelectronics
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 1.5 A 5 @ 1A, 2V - Through Hole 150°C (TJ) 1.5 W TO-92AP NPN 1.5V @ 500mA, 1.5A 400 V
APT13003SU-G1
APT13003SU-G1
Download Datasheet for APT13003SU-G1
Diodes Incorporated
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 1.3 A 5 @ 1A, 2V 4MHz Through Hole -65°C ~ 150°C (TJ) 20 W TO-126 NPN 1.2V @ 250mA, 1A 450 V
APT13003HU-G1
APT13003HU-G1
Download Datasheet for APT13003HU-G1
Diodes Incorporated
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 1.5 A 13 @ 500mA, 2V 4MHz Through Hole -65°C ~ 150°C (TJ) 20 W TO-126 NPN 400mV @ 250mA, 1A 465 V
APT13003EU-G1
APT13003EU-G1
Diodes Incorporated
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 1.5 A 13 @ 500mA, 2V 4MHz Through Hole -65°C ~ 150°C (TJ) 20 W TO-126 NPN 400mV @ 250mA, 1A 465 V
APT13005STF-G1
APT13005STF-G1
Download Datasheet for APT13005STF-G1
Diodes Incorporated
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 3.2 A 8 @ 2A, 5V 4MHz Through Hole -65°C ~ 150°C (TJ) 28 W ITO-220AB NPN 1V @ 750mA, 3A 450 V
APT13003DU-G1
APT13003DU-G1
Diodes Incorporated
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 1.5 A 5 @ 1A, 2V 4MHz Through Hole -65°C ~ 150°C (TJ) 20 W TO-126 NPN 400mV @ 250mA, 1A 450 V
MMBT4403-D87Z
MMBT4403-D87Z
On Semiconductor
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 600 mA 100 @ 150mA, 2V 200MHz Surface Mount -55°C ~ 150°C (TJ) 350 mW SOT-23-3 PNP 750mV @ 50mA, 500mA 40 V
DSM80100M-7
DSM80100M-7
Download Datasheet for DSM80100M-7
Diodes Incorporated
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 500 mA 120 @ 10mA, 1V - Surface Mount -65°C ~ 150°C (TJ) 600 mW SOT-26 PNP + Diode (Isolated) 250mV @ 10mA, 100mA 80 V
DSM80101M-7
DSM80101M-7
Diodes Incorporated
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 500 mA 120 @ 10mA, 1V - Surface Mount -65°C ~ 150°C (TJ) 600 mW SOT-26 NPN + Diode (Isolated) 300mV @ 10mA, 100mA 80 V
BCV27/DG/B2215
BCV27/DG/B2215
NXP Semiconductors
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 - - - - - - - - - -
JAN2N3251AUB
JAN2N3251AUB
Microsemi Corporation
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 200 mA 100 @ 10mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 360 mW UB PNP 500mV @ 5mA, 50mA 60 V
JANTXV2N3251AUB
JANTXV2N3251AUB
Microsemi Corporation
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 200 mA 100 @ 10mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 360 mW UB PNP 500mV @ 5mA, 50mA 60 V
JANTXV2N3421U4
JANTXV2N3421U4
Microchip Technology
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 3 A 40 @ 1A, 2V - Surface Mount -65°C ~ 200°C (TJ) 1 W U4 NPN 500mV @ 200mA, 2A 80 V
JANS2N3439U4
JANS2N3439U4
Microchip Technology
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JANTX2N3439U4
JANTX2N3439U4
Microchip Technology
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 - - - - - - - - - -
JANTXV2N3439U4
JANTXV2N3439U4
Microchip Technology
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 - - - - - - - - - -
JANS2N3439UA
JANS2N3439UA
Microchip Technology
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 1 A 40 @ 20mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 800 mW UA NPN 500mV @ 4mA, 50mA 350 V
JANTXV2N3439UA
JANTXV2N3439UA
Microchip Technology
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 1 A 40 @ 20mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 800 mW UA NPN 500mV @ 4mA, 50mA 350 V
JANS2N3440
JANS2N3440
Microchip Technology
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 1 A 40 @ 20mA, 10V - Through Hole -65°C ~ 200°C (TJ) 800 mW TO-39 (TO-205AD) NPN 500mV @ 4mA, 50mA 250 V
JANS2N3440U4
JANS2N3440U4
Microchip Technology
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JANS2N3440UA
JANS2N3440UA
Microchip Technology
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 1 A 40 @ 20mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 800 mW UA NPN 500mV @ 4mA, 50mA 250 V
JANTX2N3440UA
JANTX2N3440UA
Microchip Technology
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 1 A 40 @ 20mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 800 mW UA NPN 500mV @ 4mA, 50mA 250 V
JANTXV2N3467
JANTXV2N3467
Microchip Technology
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 1 A 40 @ 500mA, 1V - Through Hole -55°C ~ 175°C (TJ) 1 W TO-39 (TO-205AD) PNP 1.2V @ 100mA, 1A 40 V
JAN2N3467L
JAN2N3467L
Microchip Technology
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 1 A 40 @ 500mA, 1V - Through Hole -55°C ~ 175°C (TJ) 1 W TO-5 PNP 1.2V @ 100mA, 1A 40 V
JAN2N3584
JAN2N3584
Microchip Technology
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 2 A 25 @ 1A, 10V - Through Hole -65°C ~ 200°C (TJ) 2.5 W TO-66 (TO-213AA) NPN 750mV @ 125mA, 1A 250 V
JANTXV2N3585
JANTXV2N3585
Microchip Technology
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 2 A 25 @ 1A, 10V - Through Hole -65°C ~ 200°C (TJ) 2.5 W TO-66 (TO-213AA) NPN 750mV @ 125mA, 1A 300 V
JANS2N3634UB
JANS2N3634UB
Microchip Technology
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 1 A 50 @ 50mA, 10V - Surface Mount -65°C ~ 200°C (TJ) 1 W 3-SMD PNP 600mV @ 5mA, 50mA 140 V
JANTXV2N3739
JANTXV2N3739
Microchip Technology
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 1 A 25 @ 250mA, 10V - Through Hole -55°C ~ 200°C (TJ) 20 W TO-66 NPN 2.5V @ 25mA, 250mA 300 V
JAN2N3762
JAN2N3762
Microchip Technology
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 1.5 A 30 @ 1A, 1.5V - Through Hole -55°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 900mV @ 100mA, 1A 40 V
JANS2N3763
JANS2N3763
Microchip Technology
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 1.5 A 20 @ 1A, 1.5V - Through Hole -55°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 900mV @ 100mA, 1A 60 V
JANTXV2N3763
JANTXV2N3763
Microchip Technology
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 1.5 A 20 @ 1A, 1.5V - Through Hole -55°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 900mV @ 100mA, 1A 60 V
JAN2N3764
JAN2N3764
Microchip Technology
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 1.5 A 30 @ 1A, 1.5V - Through Hole -55°C ~ 200°C (TJ) 500 mW TO-46 (TO-206AB) PNP 900mV @ 100mA, 1A 40 V
Showing 13851-13900 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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