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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
89100-02TXV
89100-02TXV
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-66 (TO-213AA) - - - -
2N2219 PBFREE
2N2219 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - 250MHz - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-39 - NPN 1.6V @ 50mA, 500mA 30 V
2N2369A PBFREE
2N2369A PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 200 mA 40 @ 10mA, 350mV - - - 500MHz - - Through Hole -65°C ~ 200°C (TJ) 360 mW - - TO-18 - NPN 500mV @ 10mA, 100mA 15 V
2N2222 PBFREE
2N2222 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - 250MHz - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 - NPN 1.6V @ 50mA, 500mA 30 V
2N2219A PBFREE
2N2219A PBFREE
Download Datasheet for 2N2219A PBFREE
Central Semiconductor Corp
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-39 - NPN 1V @ 50mA, 500mA 40 V
2SA1943N(S1,E,S)
2SA1943N(S1,E,S)
Download Datasheet for 2SA1943N(S1,E,S)
Toshiba
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 - - - - - - - - 15 A 80 @ 1A, 5V - - - 30MHz - - Through Hole 150°C (TJ) 150 W - - TO-3P(N) - PNP 3V @ 800mA, 8A 230 V
2N4033 PBFREE
2N4033 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 400MHz - - Through Hole -65°C ~ 200°C (TJ) 1.25 W - - TO-39 - PNP 500mV @ 50mA, 500mA 80 V
BC107 PBFREE
BC107 PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 200 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole -65°C ~ 200°C (TJ) 600 mW - - TO-18 - NPN 600mV @ 5mA, 100mA 45 V
TIP35CG
TIP35CG
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On Semiconductor
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 - - - - - - - - 25 A 15 @ 15A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 125 W - - TO-247-3 - NPN 4V @ 5A, 25A 100 V
TIP35CP
TIP35CP
STMicroelectronics
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 - - - - - - - - 25 A 10 @ 15A, 4V - - - 3MHz - - Through Hole 150°C (TJ) 125 W - - TO-3P - NPN 4V @ 5A, 25A 100 V
90025-04TXV
90025-04TXV
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-66 (TO-213AA) - - - -
90025-05TXV
90025-05TXV
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-66 (TO-213AA) - - - -
90025-06TX
90025-06TX
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-66 (TO-213AA) - - - -
90025-06TXV
90025-06TXV
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-66 (TO-213AA) - - - -
JAN2N1714S
JAN2N1714S
Microchip Technology
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 - - - - - - - - 750 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-39 (TO-205AD) - NPN - 60 V
JAN2N1715
JAN2N1715
Microchip Technology
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 - - - - - - - - 750 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-5 - NPN - 100 V
JAN2N1715S
JAN2N1715S
Microchip Technology
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 - - - - - - - - 750 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-39 (TO-205AD) - NPN - 100 V
JAN2N1716
JAN2N1716
Microchip Technology
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 - - - - - - - - 750 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-5 - NPN - 60 V
JAN2N1716S
JAN2N1716S
Microchip Technology
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 - - - - - - - - 750 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-39 (TO-205AD) - NPN - 60 V
JAN2N1717
JAN2N1717
Microchip Technology
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 - - - - - - - - 750 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-5 - NPN - 100 V
JAN2N1717S
JAN2N1717S
Microchip Technology
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 - - - - - - - - 750 mA - - - - - - - Through Hole 175°C (TJ) - - - TO-39 (TO-205AD) - NPN - 100 V
JAN2N1724
JAN2N1724
Microchip Technology
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 - - - - - - - - 300 µA 30 @ 2A, 15V - - - - - - Stud Mount 175°C 3 W - - TO-61 - NPN 600mV @ 200mA, 2A 80 V
JAN2N1890
JAN2N1890
Microchip Technology
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 - - - - - - - - 500 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-5 - NPN 5V @ 15mA, 150mA 80 V
FMMT413TD
FMMT413TD
Download Datasheet for FMMT413TD
Diodes Incorporated
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 - - - - - - - - 100 mA 50 @ 10mA, 10V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23-3 - NPN - Avalanche Mode 150mV @ 1mA, 10mA 50 V
CEN-U07 PBFREE
CEN-U07 PBFREE
Download Datasheet for CEN-U07 PBFREE
Central Semiconductor Corp
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 - - - - - - - - 2 A 20 @ 500mA, 1V - - - 50MHz - - Through Hole -65°C ~ 150°C (TJ) 1.75 W - - TO-202 - NPN 350mV @ 25mA, 250mA 100 V
CEN-U57 PBFREE
CEN-U57 PBFREE
Download Datasheet for CEN-U57 PBFREE
Central Semiconductor Corp
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 - - - - - - - - 2 A 20 @ 500mA, 1V - - - 50MHz - - Through Hole -65°C ~ 150°C (TJ) 1.75 W - - TO-202 - PNP 350mV @ 25mA, 250mA 100 V
2SC4886
2SC4886
Download Datasheet for 2SC4886
Sanken
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 - - - - - - - - 14 A 50 @ 5A, 4V - - - 60MHz - - Through Hole 150°C (TJ) 80 W - - TO-3PF - NPN 2V @ 500mA, 5A 150 V
2SA1860
2SA1860
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Sanken
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 - - - - - - - - 14 A 50 @ 5A, 4V - - - 50MHz - - Through Hole 150°C (TJ) 80 W - - TO-3PF - PNP 2V @ 500mA, 5A 150 V
2SC5242OTU
2SC5242OTU
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On Semiconductor
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 - - - - - - - - 17 A 80 @ 1A, 5V - - - 30MHz - - Through Hole -55°C ~ 150°C (TJ) 130 W - - TO-3P - NPN 3V @ 800mA, 8A 250 V
FMMT415TD
FMMT415TD
Download Datasheet for FMMT415TD
Diodes Incorporated
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 - - - - - - - - 500 mA 25 @ 10mA, 10V - - - 40MHz - - Surface Mount -55°C ~ 150°C (TJ) 330 mW - - SOT-23-3 - NPN - Avalanche Mode 500mV @ 1mA, 10mA 100 V
2SC5200OTU
2SC5200OTU
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On Semiconductor
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 - - - - - - - - 17 A 80 @ 1A, 5V - - - 30MHz - - Through Hole -50°C ~ 150°C (TJ) 150 W - - TO-264-3 - NPN 3V @ 800mA, 8A 250 V
JAN2N3439U4
JAN2N3439U4
Microchip Technology
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 - - - - - - - - 2 µA 40 @ 20mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 800 mW - - U4 - NPN 500mV @ 4mA, 50mA 350 V
MJ21195G
MJ21195G
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On Semiconductor
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 - - - - - - - - 16 A 25 @ 8A, 5V - - - 4MHz - - Through Hole -65°C ~ 200°C (TJ) 250 W - - TO-204 (TO-3) - PNP 4V @ 3.2A, 16A 250 V
JAN2N3724
JAN2N3724
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole 200°C (TJ) - - - TO-39 (TO-205AD) - NPN - 30 V
MJ15023G
MJ15023G
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On Semiconductor
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 - - - - - - - - 16 A 15 @ 8A, 4V - - - 4MHz - - Through Hole -65°C ~ 200°C (TJ) 250 W - - TO-204 (TO-3) - PNP 4V @ 3.2A, 16A 200 V
MJ14002G
MJ14002G
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On Semiconductor
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 - - - - - - - - 60 A 15 @ 50A, 3V - - - - - - Through Hole -65°C ~ 200°C (TJ) 300 W - - TO-204 (TO-3) - NPN 3V @ 12A, 60A 80 V
JAN2N3724L
JAN2N3724L
Microchip Technology
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 - - - - - - - - 500 mA - - - - - - - Through Hole 200°C (TJ) - - - TO-5 - NPN - 30 V
JAN2N3724UB
JAN2N3724UB
Microchip Technology
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 - - - - - - - - 500 mA - - - - - - - Surface Mount 200°C (TJ) - - - UB - NPN - 30 V
JAN2N3725
JAN2N3725
Microchip Technology
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 - - - - - - - - 500 mA - - - - - - - Through Hole 200°C (TJ) - - - TO-39 (TO-205AD) - NPN - 50 V
JAN2N3725L
JAN2N3725L
Microchip Technology
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 - - - - - - - - 500 mA - - - - - - - Through Hole 200°C (TJ) - - - TO-5 - NPN - 50 V
JAN2N3725UB
JAN2N3725UB
Microchip Technology
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 - - - - - - - - 500 mA - - - - - - - Surface Mount 200°C (TJ) - - - UB - NPN - 50 V
JAN2N3740U4
JAN2N3740U4
Microchip Technology
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 - - - - - - - - 10 µA 30 @ 250mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 25 W - - U4 - PNP 600mV @ 1.25mA, 1A 60 V
JAN2N3741U4
JAN2N3741U4
Microchip Technology
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 - - - - - - - - 10 µA 30 @ 250mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 25 W - - U4 - PNP 600mV @ 1.25mA, 1A 80 V
JAN2N3743
JAN2N3743
Microchip Technology
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 - - - - - - - - 200 mA 50 @ 30mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 1.2V @ 3mA, 30mA 300 V
JAN2N3743U4
JAN2N3743U4
Microchip Technology
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 - - - - - - - - 200 mA 50 @ 30mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 1 W - - U4 - PNP 1.2V @ 3mA, 30mA 300 V
JAN2N3762L
JAN2N3762L
Microchip Technology
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 - - - - - - - - 1.5 A 40 @ 500mA, 1V - - - - - - Through Hole -55°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 900mV @ 100mA, 1A 40 V
JAN2N3762U4
JAN2N3762U4
Microchip Technology
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 - - - - - - - - 1.5 A - - - - - - - Surface Mount 200°C (TJ) - - - U4 - PNP - 40 V
JAN2N3763
JAN2N3763
Microchip Technology
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 - - - - - - - - 1.5 A 20 @ 1A, 1.5V - - - - - - Through Hole -55°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 900mV @ 100mA, 1A 60 V
2SA733(0)-T-A
2SA733(0)-T-A
Renesas
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BCW66GVL
BCW66GVL
Download Datasheet for BCW66GVL
Nexperia USA Inc.
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 - - - - - - - - 800 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 450mV @ 50mA, 500mA 45 V
Showing 13651-13700 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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