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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N6049
2N6049
Solid State Devices Inc (SSDI)
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 - - - - - - - - 4 A 25 @ 500mA, 4V - - - 3MHz - - Through Hole 200°C (TJ) 75 W - - TO-66 - PNP 2V @ 800mA, 4A 55 V
HFA1212IP
HFA1212IP
Harris Semiconductor
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2N6052
2N6052
Solid State Devices Inc (SSDI)
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 - - - - - - - - 12 A - - - - - - - Through Hole - - - - TO-3 - PNP - Darlington - 100 V
2N5038
2N5038
Solid State Devices Inc (SSDI)
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-3 - NPN - -
FJL4215OTU
FJL4215OTU
On Semiconductor
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 - - - - - - - - 17 A 80 @ 1A, 5V - - - 30MHz - - Through Hole -50°C ~ 150°C (TJ) 150 W - - HPM F2 - PNP 3V @ 800mA, 8A 250 V
PMD17K80
PMD17K80
Solid State Devices Inc (SSDI)
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 - - - - - - - - 20 A - - - - - - - Through Hole - - - - TO-3 - PNP - Darlington - 80 V
PMD17K60
PMD17K60
Solid State Devices Inc (SSDI)
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 - - - - - - - - 20 A 800 @ 10A, 3V - - - 4MHz - - Through Hole -65°C ~ 200°C (TJ) 200 W - - TO-3 - PNP - Darlington 2V @ 40mA, 10A 60 V
PMD13K80
PMD13K80
Solid State Devices Inc (SSDI)
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 - - - - - - - - 8 A - - - - - - - Through Hole - - - - TO-3 - PNP - Darlington - 80 V
PMD13K100
PMD13K100
Solid State Devices Inc (SSDI)
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 - - - - - - - - 12 A - - - - - - - Through Hole - - - - TO-3 - PNP - Darlington - 80 V
PMD17K40
PMD17K40
Solid State Devices Inc (SSDI)
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 - - - - - - - - 20 A 800 @ 10A, 3V - - - 4MHz - - Through Hole -65°C ~ 200°C (TJ) 200 W - - TO-3 - PNP - Darlington 2V @ 40mA, 10A 40 V
PMD16K80
PMD16K80
Solid State Devices Inc (SSDI)
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 - - - - - - - - 20 A - - - - - - - Through Hole - - - - TO-3 - NPN - Darlington - 80 V
NTE2697
NTE2697
NTE Electronics
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 - - - - - - - - 7 A 100 @ 3A, 4V - - - - - - Through Hole 150°C (TJ) 50 W - - TO-220 - NPN 500mV @ 300mA, 3A 120 V
HFA1115IP
HFA1115IP
Harris Semiconductor
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HC4P5502B-5
HC4P5502B-5
Harris Semiconductor
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MJ15023
MJ15023
Solid State Devices Inc (SSDI)
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 - - - - - - - - 16 A 15 @ 8A, 4V - - - 4MHz - - Through Hole 150°C (TJ) 250 W - - TO-3 - PNP 4V @ 3.2A, 16A 200 V
MJ15004
MJ15004
Solid State Devices Inc (SSDI)
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 - - - - - - - - 20 A 25 @ 5A, 2V - - - 2MHz - - Through Hole -65°C ~ 200°C (TJ) 250 W - - TO-3 - PNP 1V @ 500mA, 5A 140 V
MJ15022
MJ15022
Solid State Devices Inc (SSDI)
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 - - - - - - - - 16 A 15 @ 8A, 4V - - - 4MHz - - Through Hole 150°C (TJ) 250 W - - TO-3 - NPN 4V @ 3.2A, 16A 200 V
MJ15003
MJ15003
Solid State Devices Inc (SSDI)
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 - - - - - - - - 20 A 25 @ 5A, 2V - - - 2MHz - - Through Hole -65°C ~ 200°C (TJ) 250 W - - TO-3 - NPN 1V @ 500mA, 5A 140 V
UC3838Q
UC3838Q
Texas Instruments
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PBHV9040ZF
PBHV9040ZF
Download Datasheet for PBHV9040ZF
Nexperia USA Inc.
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 - - - - - - - - 250 mA 100 @ 50mA, 10V - - - 55MHz - - Surface Mount 150°C (TJ) - - - SOT-223 - PNP 200mV @ 20mA, 100mA 400 V
BCX5116E6327HTSA1
BCX5116E6327HTSA1
Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 125MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT89-4-2 - PNP 500mV @ 50mA, 500mA 45 V
BC184RL1
BC184RL1
On Semiconductor
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MJD2873Q-13
MJD2873Q-13
Diodes Incorporated
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 - - - - - - - - 2 A 120 @ 500mA, 2V - - - 65MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.45 W - - TO-252, (D-Pak) - NPN 300mV @ 50mA, 1A 50 V
2SA2070(TE12L,F)
2SA2070(TE12L,F)
Download Datasheet for 2SA2070(TE12L,F)
Toshiba
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 - - - - - - - - 1 A 200 @ 100mA, 2V - - - - - - Surface Mount 150°C (TJ) 1 W - - PW-MINI - PNP 200mV @ 10mA, 300mA 50 V
MPSA05
MPSA05
NTE Electronics
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 - - - - - - - - 500 mA 50 @ 10mA, 1V - - - 100MHz - - Through Hole - 625 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 60 V
KSC5504DTTU
KSC5504DTTU
On Semiconductor
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 - - - - - - - - 4 A 4 @ 2A, 1V - - - 11MHz - - Through Hole 150°C (TJ) 75 W - - TO-220-3 - NPN 1.5V @ 400mA, 2A 600 V
FMB857B
FMB857B
Download Datasheet for FMB857B
On Semiconductor
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 - - - - - - - - 500 mA 220 @ 2mA, 5V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 700 mW - - SuperSOT™-6 - PNP 650mV @ 5mA, 100mA 45 V
495220TU
495220TU
On Semiconductor
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 - - - - - - - - 4 A 1000 @ 3A, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 40 W - - TO-220-3 - NPN - Darlington 1.5V @ 5mA, 2A 325 V
2SA1723
2SA1723
On Semiconductor
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 - - - - - - - - 300 mA 15 @ 50mA, 5V - - - 1.5GHz - - Through Hole - 1.2 W - - TO-126 - PNP 1V @ 10mA, 100mA 20 V
2N3415
2N3415
NTE Electronics
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 - - - - - - - - 500 mA 180 @ 2mA, 4.5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 3mA, 50mA 25 V
UPA804T-T1-A
UPA804T-T1-A
Renesas
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2N3417
2N3417
NTE Electronics
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 - - - - - - - - 500 mA 180 @ 2mA, 4.5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 3mA, 50mA 50 V
2N3390
2N3390
NTE Electronics
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 - - - - - - - - 500 mA 400 @ 2mA, 4.5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - 25 V
KSB907TU
KSB907TU
Download Datasheet for KSB907TU
On Semiconductor
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 - - - - - - - - 3 A 1000 @ 3A, 2V - - - - - - Through Hole 150°C (TJ) 15 W - - I-PAK - PNP - Darlington 1.5V @ 4mA, 2A 40 V
MPSA44
MPSA44
NTE Electronics
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 - - - - - - - - 300 mA 50 @ 10mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 750mV @ 5mA, 50mA 400 V
2N5210
2N5210
NTE Electronics
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 - - - - - - - - 50 mA 250 @ 10mA, 5V - - - 30MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 700mV @ 1mA, 10mA 50 V
BUX31
BUX31
Harris Semiconductor
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 - - - - - - - - 8 A 8 @ 4A, 3V - - - 15MHz - - Through Hole - 150 W - - TO-3 - NPN - 400 V
2SA1208T
2SA1208T
On Semiconductor
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AR1L2Q-T-AZ
AR1L2Q-T-AZ
Renesas
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2SA1435
2SA1435
On Semiconductor
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2SA1540D
2SA1540D
On Semiconductor
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2SA1689E-HM-AA
2SA1689E-HM-AA
On Semiconductor
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2SA1740E-TD-E
2SA1740E-TD-E
On Semiconductor
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2SA1729S-TD-E
2SA1729S-TD-E
On Semiconductor
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2SB1131T-AE
2SB1131T-AE
On Semiconductor
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2SB1131S
2SB1131S
On Semiconductor
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PHPT610030NK115
PHPT610030NK115
Download Datasheet for PHPT610030NK115
NXP Semiconductors
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SJD31CT4
SJD31CT4
On Semiconductor
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TE02561
TE02561
On Semiconductor
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2SA1338-6-TB-E
2SA1338-6-TB-E
On Semiconductor
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Showing 11651-11700 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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