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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N3904UB/TR
2N3904UB/TR
Microchip Technology
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JANSF2N3700UB
JANSF2N3700UB
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 - - - - - - - - 1 A 50 @ 500mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 500mV @ 50mA, 500mA 80 V
2N5038
2N5038
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 - - - - - - - - 1 µA 50 @ 2A, 5V - - - - - - Through Hole -65°C ~ 200°C (TA) 140 W - - TO-3 - NPN 2.5V @ 5A, 20A 90 V
2N5039
2N5039
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 - - - - - - - - 20 A 30 @ 2A, 5V - - - - - - Through Hole -65°C ~ 200°C 140 W - - TO-204AD (TO-3) - NPN 2.5V @ 5A, 20A 75 V
2C6213
2C6213
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JANTXV2N3879P
JANTXV2N3879P
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 - - - - - - - - 7 A 40 @ 500mA, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 35 W - - TO-66 (TO-213AA) - NPN 1.2V @ 400mA, 4A 75 V
JAN2N3716
JAN2N3716
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 - - - - - - - - 10 A 30 @ 3A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 5 W - - TO-3 (TO-204AA) - NPN 2.5V @ 2A, 10A 80 V
2N6049
2N6049
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2N6051
2N6051
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2N6052
2N6052
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2N6059
2N6059
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2N6050
2N6050
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 - - - - - - - - 12 A 750 @ 6A, 3V - - - - - - Through Hole -65°C ~ 200°C (TJ) 150 W - - TO-204AA (TO-3) - PNP - Darlington 2V @ 24mA, 6A 60 V
2N3440UA
2N3440UA
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 - - - - - - - - 1 A 40 @ 20mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 800 mW - - UA - NPN 500mV @ 4mA, 50mA 250 V
2N6058
2N6058
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JAN2N6052
JAN2N6052
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 - - - - - - - - 12 A 1000 @ 6A, 3V - - - - - - Through Hole -55°C ~ 175°C (TJ) 150 W - - TO-3 (TO-204AA) - PNP - Darlington 3V @ 120mA, 12A 100 V
JAN2N6058
JAN2N6058
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 - - - - - - - - 12 A 1000 @ 6A, 3V - - - - - - Through Hole -55°C ~ 175°C (TJ) 150 W - - TO-3 (TO-204AA) - NPN - Darlington 3V @ 120mA, 12A 80 V
JAN2N6059
JAN2N6059
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 - - - - - - - - 12 A 1000 @ 6A, 3V - - - - - - Through Hole -55°C ~ 175°C (TJ) 150 W - - TO-204AA (TO-3) - NPN - Darlington 3V @ 120mA, 12A 100 V
2N4387
2N4387
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 - - - - - - - - 2 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 20 W - - TO-66 (TO-213AA) - PNP - 40 V
2N4388
2N4388
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 - - - - - - - - 2 A - - - - - - - Through Hole - 20 W - - TO-66 (TO-213AA) - PNP - 60 V
JANHCB2N5002
JANHCB2N5002
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 - - - - - - - - 50 µA 30 @ 2.5A, 5V - - - - - - Stud Mount -65°C ~ 200°C (TJ) 2 W - - Die - NPN 1.5V @ 500mA, 5A 80 V
JANHCB2N5004
JANHCB2N5004
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 - - - - - - - - 50 µA 70 @ 2.5A, 5V - - - - - - Stud Mount -65°C ~ 200°C (TJ) 2 W - - Die - NPN 1.5V @ 500mA, 5A 80 V
2N6543
2N6543
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 - - - - - - - - 5 A - - - - - - - Through Hole - 100 W - - TO-3 - PNP - 400 V
2N5885
2N5885
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2N6546
2N6546
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 - - - - - - - - 15 A 15 @ 1A, 2V - - - - - - Through Hole -65°C ~ 200°C 175 W - - TO-204AD (TO-3) - NPN 5V @ 3A, 15A 300 V
2N6547
2N6547
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 - - - - - - - - 15 A 15 @ 1A, 2V - - - - - - Through Hole -65°C ~ 200°C 175 W - - TO-204AD (TO-3) - NPN 5V @ 3A, 15A 400 V
2N6542
2N6542
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 - - - - - - - - 5 A - - - - - - - Through Hole - 100 W - - TO-204AD (TO-3) - PNP - 300 V
2CGA201A-MSCL
2CGA201A-MSCL
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2CGA301A-MSCL
2CGA301A-MSCL
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JANS2N2484
JANS2N2484
Microchip Technology
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 - - - - - - - - 50 mA 225 @ 10mA, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 360 mW - - TO-18 (TO-206AA) - NPN 300mV @ 100µA, 1mA 60 V
2N3054A
2N3054A
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2N3054
2N3054
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JAN2N6306
JAN2N6306
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 - - - - - - - - 8 A 15 @ 3A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 125 W - - TO-204AA (TO-3) - NPN 5V @ 2A, 8A 250 V
JAN2N6308
JAN2N6308
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 - - - - - - - - 8 A 12 @ 3A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 125 W - - TO-204AA (TO-3) - NPN 5V @ 2.67A, 8A 350 V
JANS2N3500
JANS2N3500
Microchip Technology
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 - - - - - - - - 300 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 400mV @ 15mA, 150mA 150 V
JANS2N3498L
JANS2N3498L
Microchip Technology
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 - - - - - - - - 500 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - NPN 600mV @ 30mA, 300mA 100 V
JANS2N3499
JANS2N3499
Microchip Technology
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 - - - - - - - - 500 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 600mV @ 30mA, 300mA 100 V
2N5415UAC
2N5415UAC
Microchip Technology
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 - - - - - - - - 1 A 30 @ 50mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 750 mW - - UA - PNP 2V @ 5mA, 50mA 200 V
JANS2N3500L
JANS2N3500L
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 - - - - - - - - 300 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - NPN 400mV @ 15mA, 150mA 150 V
JANS2N3498
JANS2N3498
Microchip Technology
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 - - - - - - - - 500 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 600mV @ 30mA, 300mA 100 V
2N4909
2N4909
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 150 W - - TO-204AD (TO-3) - PNP - 80 V
2N4908
2N4908
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 150 W - - TO-204AD (TO-3) - PNP - 60 V
2N4907
2N4907
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 - - - - - - - - 10 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 150 W - - TO-204AD (TO-3) - PNP - 40 V
2N5157
2N5157
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 - - - - - - - - 250 µA 30 @ 1A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 5 W - - TO-3 - NPN 2.5V @ 700mA, 3.5A 500 V
JAN2N6283
JAN2N6283
Microchip Technology
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 - - - - - - - - 20 A 1250 @ 10A, 3V - - - - - - Through Hole -65°C ~ 200°C (TJ) 175 W - - TO-3 (TO-204AA) - NPN - Darlington 3V @ 200mA, 20A 80 V
2N1488
2N1488
Microchip Technology
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 - - - - - - - - 6 A 15 @ 1.5A, 4V - - - - - - Through Hole -65°C ~ 200°C (TJ) 75 W - - TO-204AD (TO-3) - NPN 3V @ 300mA, 1.5A 55 V
2N1487
2N1487
Microchip Technology
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 - - - - - - - - 6 A 15 @ 1.5A, 4V - - - - - - Through Hole -65°C ~ 200°C (TJ) 75 W - - TO-204AD (TO-3) - NPN 3V @ 300mA, 1.5A 40 V
2N1489
2N1489
Microchip Technology
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 - - - - - - - - 6 A 25 @ 1.5A, 4V - - - - - - Through Hole -65°C ~ 200°C (TJ) 75 W - - TO-204AD (TO-3) - NPN 3V @ 300mA, 1.5A 40 V
2N1490
2N1490
Microchip Technology
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 - - - - - - - - 6 A 25 @ 1.5A, 4V - - - - - - Through Hole -65°C ~ 200°C (TJ) 75 W - - TO-204AD (TO-3) - NPN 3V @ 300mA, 1.5A 55 V
2N3960UB/TR
2N3960UB/TR
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 - - - - - - - - 10µA (ICBO) 60 @ 10mA, 1V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 400 mW - - UB - NPN 300mV @ 3mA, 30mA 12 V
2N3904UB
2N3904UB
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Showing 11501-11550 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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