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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
NSVS50031SB3T1G
NSVS50031SB3T1G
Download Datasheet for NSVS50031SB3T1G
On Semiconductor
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MJD42CQ-13
MJD42CQ-13
Diodes Incorporated
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 - - - - - - - - 6 A 30 @ 300mA, 4V - - - 3MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.5 W - - TO-252, (D-Pak) - PNP 1.5V @ 600mA, 6A 100 V
PHPT60610NYX
PHPT60610NYX
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Nexperia USA Inc.
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 - - - - - - - - 10 A 240 @ 500mA, 2V - - - 140MHz - - Surface Mount 175°C (TJ) 1.5 W - - LFPAK56, Power-SO8 - NPN 360mV @ 1A, 10A 60 V
FJPF3305TU
FJPF3305TU
On Semiconductor
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 - - - - - - - - 4 A 19 @ 1A, 5V - - - 4MHz - - Through Hole 150°C (TJ) 30 W - - TO-220F-3 - NPN 1V @ 1A, 4A 400 V
TIP42C
TIP42C
Harris Semiconductor
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - 3MHz - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - PNP 1.5V @ 600mA, 6A 100 V
KSD5018TU
KSD5018TU
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 - - - - - - - - 4 A - - - - - - - Through Hole 150°C (TJ) 40 W - - TO-220-3 - NPN - Darlington 1.5V @ 20mA, 3A 275 V
2N3702
2N3702
NTE Electronics
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 - - - - - - - - 500 mA 60 @ 50mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 250mV @ 5mA, 50mA 25 V
BD436G
BD436G
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2SA1641T-TL-E
2SA1641T-TL-E
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D42C1
D42C1
Harris Semiconductor
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 - - - - - - - - 3 A 25 @ 200mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 2.1 W - - TO-202AB - NPN 500mV @ 100mA, 1A 30 V
NESG340033-T1B-A
NESG340033-T1B-A
Renesas
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FJP5554TU
FJP5554TU
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 - - - - - - - - 4 A 20 @ 800mA, 3V - - - - - - Through Hole 150°C (TJ) 70 W - - TO-220-3 - NPN 1.5V @ 1A, 3.5A 400 V
BD675AS-ON
BD675AS-ON
On Semiconductor
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 - - - - - - - - 4 A 750 @ 2A, 3V - - - - - - Through Hole 150°C (TJ) 40 W - - TO-126-3 - NPN - Darlington 2.8V @ 40mA, 2A 45 V
MJD47TF-FS
MJD47TF-FS
On Semiconductor
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 - - - - - - - - 200µA 30 @ 300mA, 10V - - - 10MHz - - Surface Mount -65°C ~ 150°C (TJ) 1.56 W - - TO-252-3 (DPAK) - NPN 1V @ 200mA, 1A -
BC847BW-QF
BC847BW-QF
Download Datasheet for BC847BW-QF
Nexperia USA Inc.
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - NPN 400mV @ 5mA, 100mA 45 V
2SCR552PHZGT100
2SCR552PHZGT100
ROHM Semiconductor
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 - - - - - - - - 3 A 200 @ 500mA, 2V - - - 280MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - NPN 400mV @ 50mA, 1A 30 V
KSH122TM
KSH122TM
On Semiconductor
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 - - - - - - - - 8 A 1000 @ 4A, 4V - - - - - - Surface Mount 150°C (TJ) 1.75 W - - D-Pak - NPN - Darlington 4V @ 80mA, 8A 100 V
2SC3922
2SC3922
Sanyo Denki
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BUD43B-001
BUD43B-001
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KSH210TM
KSH210TM
On Semiconductor
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 - - - - - - - - 5 A 45 @ 2A, 1V - - - 65MHz - - Surface Mount 150°C (TJ) 1.4 W - - D-Pak - PNP 1.8V @ 1A, 5A 25 V
2SD1816S-TL-EX
2SD1816S-TL-EX
On Semiconductor
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2SC3143-4-TB-E-SY
2SC3143-4-TB-E-SY
Sanyo Denki
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2SC3689-TB-E-SY
2SC3689-TB-E-SY
Sanyo Denki
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ZTX558STZ
ZTX558STZ
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Diodes Incorporated
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 - - - - - - - - 200 mA 100 @ 50mA, 10V - - - 50MHz - - Through Hole -55°C ~ 200°C (TJ) 1 W - - E-Line (TO-92 compatible) - PNP 500mV @ 6mA, 50mA 400 V
FJPF6806DTU
FJPF6806DTU
On Semiconductor
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 - - - - - - - - 6 A 4 @ 4A, 5V - - - - - - Through Hole 150°C (TJ) 40 W - - TO-220F-3 - NPN 5V @ 1A, 4A 750 V
FP216-TL-E
FP216-TL-E
On Semiconductor
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2SC3951E
2SC3951E
On Semiconductor
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2SA1562-E
2SA1562-E
On Semiconductor
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2SA2023
2SA2023
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PZTA96T3
PZTA96T3
On Semiconductor
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NESG220034-T1-A
NESG220034-T1-A
Renesas
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FJP5555ATU
FJP5555ATU
On Semiconductor
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FZT855QTC
FZT855QTC
Diodes Incorporated
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 - - - - - - - - 5 A 100 @ 1A, 5V - - - 90MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.6 W - - SOT-223 - NPN 355mV @ 500mA, 5A 150 V
BUL147G
BUL147G
On Semiconductor
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FX509-N-TL-E
FX509-N-TL-E
On Semiconductor
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2SC3600E
2SC3600E
On Semiconductor
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SJB42CT4
SJB42CT4
On Semiconductor
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SJE5959LFVK
SJE5959LFVK
On Semiconductor
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SJB1001T4G
SJB1001T4G
On Semiconductor
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FJP5555STU
FJP5555STU
On Semiconductor
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2SD2211T100Q
2SD2211T100Q
Download Datasheet for 2SD2211T100Q
ROHM Semiconductor
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 - - - - - - - - 1.5 A 120 @ 100mA, 5V - - - 80MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - NPN 2V @ 100mA, 1A 160 V
2SB1412TLQ
2SB1412TLQ
Download Datasheet for 2SB1412TLQ
ROHM Semiconductor
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 - - - - - - - - 5 A 82 @ 500mA, 2V - - - 120MHz - - Surface Mount 150°C (TJ) 10 W - - CPT3 - PNP 1V @ 100mA, 4A 20 V
AR1L3N-AZ
AR1L3N-AZ
Renesas
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RQA0008AQS#H1
RQA0008AQS#H1
Renesas
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FJP5321TU
FJP5321TU
On Semiconductor
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 - - - - - - - - 5 A 15 @ 600mA, 5V - - - 14MHz - - Through Hole 150°C (TJ) 100 W - - TO-220-3 - NPN 1V @ 600mA, 3A 500 V
BD241A
BD241A
Harris Semiconductor
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 - - - - - - - - 3 A 25 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 40 W - - TO-220AB - NPN 1.2V @ 600mA, 3A 60 V
2SB1168S
2SB1168S
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D45C9
D45C9
Harris Semiconductor
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 - - - - - - - - 4 A 40 @ 200mA, 1V - - - 40MHz - - Through Hole -55°C ~ 150°C (TJ) 30 W - - TO-220 - PNP 500mV @ 50mA, 1A 60 V
2SC3597E
2SC3597E
On Semiconductor
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CPH3148-TL-E
CPH3148-TL-E
On Semiconductor
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 - - - - - - - - 2 A 200 @ 100mA, 5V - - - 260MHz - - Surface Mount - 900 mW - - 3-CPH - PNP 240mV @ 100mA, 1A 100 V
Showing 11801-11850 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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