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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
CTLT953-M833S TR
CTLT953-M833S TR
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Central Semiconductor Corp
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 - - - - - - - - 5 A 100 @ 1A, 1V - - - 150MHz - - Surface Mount -65°C ~ 150°C (TJ) 2.5 W - - TLM833S - PNP 420mV @ 400mA, 4A 100 V
CP219-2N5338-WN
CP219-2N5338-WN
Central Semiconductor Corp
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 - - - - - - - - 5 A 30 @ 2A, 2V - - - 30MHz - - Surface Mount -65°C ~ 150°C (TJ) - - - Die - NPN 1.2V @ 500mA, 5A 100 V
CP219-2N5339-CM
CP219-2N5339-CM
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Central Semiconductor Corp
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 - - - - - - - - 5 A 60 @ 2A, 2V - - - 30MHz - - Surface Mount -65°C ~ 150°C (TJ) 6 W - - Die - NPN 1.2V @ 500mA, 5A 100 V
BUX11 PBFREE
BUX11 PBFREE
Central Semiconductor Corp
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 - - - - - - - - 20 A - - - - 8MHz - - - - - - - - - NPN - -
CP219-2N5339-CT
CP219-2N5339-CT
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Central Semiconductor Corp
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 - - - - - - - - 5 A 60 @ 2A, 2V - - - 30MHz - - Surface Mount -65°C ~ 150°C (TJ) 6 W - - Die - NPN 1.2V @ 500mA, 5A 100 V
CP219-2N5339-WN
CP219-2N5339-WN
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Central Semiconductor Corp
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 - - - - - - - - 5 A 60 @ 2A, 2V - - - 30MHz - - Surface Mount -65°C ~ 150°C (TJ) 6 W - - Die - NPN 1.2V @ 500mA, 5A 100 V
2N5339
2N5339
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Central Semiconductor Corp
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 - - - - - - - - 5 A 60 @ 2A, 2V - - - 30MHz - - Through Hole -65°C ~ 200°C (TJ) 6 W - - TO-39 - NPN 1.2V @ 500mA, 5A 100 V
2N5430
2N5430
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Central Semiconductor Corp
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 - - - - - - - - 7 A - - - - 30MHz - - Through Hole - 40 W - - TO-66 - NPN - 100 V
2STX1360-AP
2STX1360-AP
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STMicroelectronics
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 - - - - - - - - 3 A 160 @ 1A, 2V - - - 130MHz - - Through Hole 150°C (TJ) 1 W - - TO-92AP - NPN 500mV @ 150mA, 3A 60 V
STL128DN
STL128DN
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STMicroelectronics
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 - - - - - - - - 4 A 10 @ 10mA, 5V - - - - - - Through Hole 150°C (TJ) 60 W - - TO-220 - NPN 1V @ 400mA, 2A 400 V
SJD127T4G-VF01
SJD127T4G-VF01
On Semiconductor
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CP692-MPS4992-CM
CP692-MPS4992-CM
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Central Semiconductor Corp
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CP692-MPS4992-CT
CP692-MPS4992-CT
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Central Semiconductor Corp
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CP692-MPS4992-WN
CP692-MPS4992-WN
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Central Semiconductor Corp
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MPS4992
MPS4992
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Central Semiconductor Corp
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MPS4992 APM
MPS4992 APM
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Central Semiconductor Corp
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1085-MMBT100A
1085-MMBT100A
On Semiconductor
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 - - - - - - - - 500 mA 300 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23 - NPN 400mV @ 20mA, 200mA 45 V
1985-MBT2222A
1985-MBT2222A
On Semiconductor
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2385-MMBT3904
2385-MMBT3904
On Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - NPN 300mV @ 5mA, 50mA 40 V
4885-MPSA42
4885-MPSA42
On Semiconductor
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 500mV @ 2mA, 20mA 300 V
6685-MMBT3906
6685-MMBT3906
On Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - PNP 400mV @ 5mA, 50mA 40 V
6686-2N3906
6686-2N3906
On Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 5mA, 50mA 40 V
6985-BC556B
6985-BC556B
On Semiconductor
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 280MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 650mV @ 5mA, 100mA 65 V
KSH122TF-X
KSH122TF-X
On Semiconductor
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 - - - - - - - - 8 A 1000 @ 4A, 4V - - - - - - Surface Mount 150°C (TJ) 1.75 W - - D-Pak - NPN - Darlington 4V @ 80mA, 8A 100 V
2SAR523V1T2L
2SAR523V1T2L
ROHM Semiconductor
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2N6341G
2N6341G
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On Semiconductor
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 - - - - - - - - 25 A 50 @ 500mA, 2V - - - 40MHz - - Through Hole -65°C ~ 200°C (TJ) 200 W - - TO-204 (TO-3) - NPN 1.8V @ 2.5A, 25A 150 V
2DC4672-13-79
2DC4672-13-79
Diodes Incorporated
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MJD122RLG
MJD122RLG
On Semiconductor
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 - - - - - - - - 8 A 1000 @ 4A, 4V - - - 4MHz - - Surface Mount -65°C ~ 150°C (TJ) 1.75 W - - DPAK - NPN - Darlington 4V @ 80mA, 8A 100 V
MJD2955RLG
MJD2955RLG
On Semiconductor
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 - - - - - - - - 10 A 20 @ 4A, 4V - - - 2MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.75 W - - DPAK - PNP 8V @ 3.3A, 10A 60 V
MJD122-1G
MJD122-1G
On Semiconductor
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 - - - - - - - - 8 A 1000 @ 4A, 4V - - - 4MHz - - Surface Mount -65°C ~ 150°C (TJ) 1.75 W - - DPAK - NPN - Darlington 4V @ 80mA, 8A 100 V
2N6422 PBFREE
2N6422 PBFREE
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Central Semiconductor Corp
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2SC5916TLR
2SC5916TLR
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ROHM Semiconductor
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MMSTA64-7
MMSTA64-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - PNP - Darlington 1.5V @ 100µA, 100mA 30 V
DNLS412E-13
DNLS412E-13
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Diodes Incorporated
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 - - - - - - - - 4 A 500 @ 100mA, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-223-3 - NPN 400mV @ 50mA, 4A 12 V
MMST4126-7
MMST4126-7
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Diodes Incorporated
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DCP55-13
DCP55-13
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Diodes Incorporated
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-223-3 - NPN 500mV @ 50mA, 500mA 60 V
APT13003XZTR-E1
APT13003XZTR-E1
Diodes Incorporated
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DZT951-13
DZT951-13
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Diodes Incorporated
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 - - - - - - - - 5 A 100 @ 2A, 1V - - - 120MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-223-3 - PNP 460mV @ 500mA, 5A 60 V
ZXT4M322TA
ZXT4M322TA
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Diodes Incorporated
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ZX3CD1S1M832TA
ZX3CD1S1M832TA
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Diodes Incorporated
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MMSTA14-7
MMSTA14-7
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Diodes Incorporated
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 - - - - - - - - 300 mA 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
ZUMT2369ATA
ZUMT2369ATA
Diodes Incorporated
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MMSTA56-7
MMSTA56-7
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Diodes Incorporated
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DVR1V8W-7
DVR1V8W-7
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Diodes Incorporated
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2DA1774R-7
2DA1774R-7
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Diodes Incorporated
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DPLS325E-13
DPLS325E-13
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Diodes Incorporated
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 - - - - - - - - 3 A 300 @ 10mA, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-223-3 - PNP 500mV @ 100mA, 3A 25 V
MMSTA63-7
MMSTA63-7
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Diodes Incorporated
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MMBT4126-7
MMBT4126-7
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Diodes Incorporated
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MMST4124-7
MMST4124-7
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Diodes Incorporated
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MMSTA55-7
MMSTA55-7
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Diodes Incorporated
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Showing 9051-9100 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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