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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
MPSW51G
MPSW51G
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 - - - - - - - - 1 A 60 @ 100mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 700mV @ 100mA, 1A 30 V
MPSW55
MPSW55
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 - - - - - - - - 500 mA 50 @ 250mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 500mV @ 10mA, 250mA 60 V
MPSW55G
MPSW55G
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 - - - - - - - - 500 mA 50 @ 250mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 500mV @ 10mA, 250mA 60 V
MPSW55RLRA
MPSW55RLRA
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 - - - - - - - - 500 mA 50 @ 250mA, 1V - - - 50MHz - - Through Hole - 1 W - - TO-92 (TO-226) - PNP 500mV @ 10mA, 250mA 60 V
MPSW55RLRAG
MPSW55RLRAG
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 - - - - - - - - 500 mA 50 @ 250mA, 1V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - PNP 500mV @ 10mA, 250mA 60 V
MSC2712YT1G
MSC2712YT1G
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 - - - - - - - - 100 mA 120 @ 2mA, 6V - - - 50MHz - - Surface Mount 150°C (TJ) 200 mW - - SC-59 - NPN 500mV @ 10mA, 100mA 50 V
MSD1328-ST1G
MSD1328-ST1G
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 - - - - - - - - 500 mA 300 @ 500mA, 2V - - - - - - Surface Mount 150°C (TJ) 200 mW - - SC-59 - NPN 400mV @ 20mA, 500mA 20 V
MSD42WT1
MSD42WT1
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 - - - - - - - - 150 mA 40 @ 30mA, 10V - - - - - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SC-70-3 (SOT323) - NPN 500mV @ 2mA, 20mA 300 V
NJD2873
NJD2873
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 - - - - - - - - 2 A 120 @ 500mA, 2V - - - 65MHz - - Surface Mount - 15 W - - DPAK - NPN 300mV @ 50mA, 1A 50 V
NJD2873RL
NJD2873RL
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 - - - - - - - - 2 A 120 @ 500mA, 2V - - - 65MHz - - Surface Mount -65°C ~ 175°C (TJ) 1.68 W - - DPAK - NPN 300mV @ 50mA, 1A 50 V
NJD2873T4
NJD2873T4
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 - - - - - - - - 2 A 120 @ 500mA, 2V - - - 65MHz - - Surface Mount - 15 W - - DPAK - NPN 300mV @ 50mA, 1A 50 V
NJL21193DG
NJL21193DG
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 - - - - - - - - 16 A 25 @ 8A, 5V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 200 W - - TO-264 - PNP 4V @ 3.2A, 16A 250 V
NJL21194DG
NJL21194DG
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 - - - - - - - - 16 A 25 @ 8A, 5V - - - 4MHz - - Through Hole -65°C ~ 150°C (TJ) 200 W - - TO-264 - NPN 4V @ 3.2A, 16A 250 V
NJL4281DG
NJL4281DG
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 - - - - - - - - 15 A 80 @ 5A, 5V - - - 35MHz - - Through Hole -65°C ~ 150°C (TJ) 230 W - - TO-264 - NPN + Diode (Isolated) 1V @ 800mA, 8A 350 V
NSCT817-40LT1G
NSCT817-40LT1G
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 - - - - - - - - 100 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - NPN 700mV @ 50mA, 500mA 45 V
NSCT817-40LT3G
NSCT817-40LT3G
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 - - - - - - - - 100 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - NPN 700mV @ 50mA, 500mA 45 V
NST489AMT1
NST489AMT1
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 - - - - - - - - 2 A 300 @ 500mA, 5V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 535 mW - - 6-TSOP - NPN 200mV @ 100mA, 1A 30 V
P2N2222ARL1
P2N2222ARL1
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 1V @ 50mA, 500mA 40 V
P2N2222ARL1G
P2N2222ARL1G
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 1V @ 50mA, 500mA 40 V
P2N2222AZL1
P2N2222AZL1
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 1V @ 50mA, 500mA 40 V
P2N2222AZL1G
P2N2222AZL1G
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 1V @ 50mA, 500mA 40 V
P2N2907A
P2N2907A
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 1.6V @ 50mA, 500mA 60 V
P2N2907AG
P2N2907AG
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 1.6V @ 50mA, 500mA 60 V
P2N2907ARL1
P2N2907ARL1
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 1.6V @ 50mA, 500mA 60 V
TIP106G
TIP106G
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 - - - - - - - - 8 A 1000 @ 3A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP - Darlington 2.5V @ 80mA, 8A 80 V
TIP131G
TIP131G
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 - - - - - - - - 8 A 1000 @ 4A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 3V @ 30mA, 6A 80 V
TIP132G
TIP132G
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 - - - - - - - - 8 A 1000 @ 4A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 3V @ 30mA, 6A 100 V
2N5400
2N5400
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 - - - - - - - - 600 mA 40 @ 10mA, 5V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 500mV @ 5mA, 50mA 120 V
BC182
BC182
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92 (TO-226) - NPN 600mV @ 5mA, 100mA 50 V
BD244B
BD244B
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 65 W - - TO-220 - PNP 1.5V @ 1A, 6A 80 V
BDX33B
BDX33B
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 - - - - - - - - 10 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 70 W - - TO-220 - NPN - Darlington 2.5V @ 6mA, 3A 80 V
BUB941ZT
BUB941ZT
STMicroelectronics
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 - - - - - - - - 15 A 300 @ 5A, 10V - - - - - - Surface Mount 175°C (TJ) 150 W - - D²PAK - NPN - Darlington 1.8V @ 250mA, 10A 350 V
BCX 54-16 E6327
BCX 54-16 E6327
Download Datasheet for BCX 54-16 E6327
Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT89 - NPN 500mV @ 50mA, 500mA 45 V
MMBTA14LT1HTSA1
MMBTA14LT1HTSA1
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Infineon Technologies
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 - - - - - - - - 300 mA 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
2N5172_D26Z
2N5172_D26Z
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 - - - - - - - - 500 mA 100 @ 10mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 250mV @ 1mA, 10mA 25 V
DZT3150-13
DZT3150-13
Diodes Incorporated
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 - - - - - - - - 5 A 250 @ 500mA, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-223-3 - NPN 500mV @ 200mA, 4A 25 V
2STN2360
2STN2360
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STMicroelectronics
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 - - - - - - - - 3 A 160 @ 1A, 2V - - - 130MHz - - Surface Mount 150°C (TJ) 1.6 W - - SOT-223 - PNP 500mV @ 150mA, 3A 60 V
90025-04TX
90025-04TX
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-66 (TO-213AA) - - - -
ST631K
ST631K
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STMicroelectronics
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 - - - - - - - - 1 A 120 @ 100mA, 5V - - - - - - Through Hole 150°C (TJ) 12.5 W - - SOT-32-3 - PNP 500mV @ 50mA, 500mA 120 V
ST901TFP
ST901TFP
STMicroelectronics
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 - - - - - - - - 4 A 1500 @ 2A, 2V - - - - - - Through Hole - 80 W - - TO-220FP - NPN - Darlington 2V @ 1A, 5A 400 V
STL72
STL72
STMicroelectronics
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 - - - - - - - - 1 A 10 @ 400mA, 5V - - - - - - Through Hole 150°C (TJ) 1 W - - TO-92 - NPN 500mV @ 80mA, 400mA 400 V
STN1802
STN1802
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STMicroelectronics
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 - - - - - - - - 3 A 200 @ 100mA, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 1.6 W - - SOT-223 - NPN 400mV @ 150mA, 3A 60 V
STSA851-AP
STSA851-AP
STMicroelectronics
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 - - - - - - - - 5 A 150 @ 2A, 1V - - - 130MHz - - Through Hole 150°C (TJ) 1.1 W - - TO-92AP - NPN 450mV @ 200mA, 5A 60 V
STT13005
STT13005
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STMicroelectronics
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 - - - - - - - - 2 A 10 @ 500mA, 5V - - - - - - Through Hole 150°C (TJ) 45 W - - SOT-32-3 - NPN 1.5V @ 400mA, 1.6A 400 V
STX117-AP
STX117-AP
STMicroelectronics
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 1.2 W - - TO-92AP - PNP 2.5V @ 8mA, 2A 100 V
STX715-AP
STX715-AP
STMicroelectronics
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 - - - - - - - - 1.5 A 40 @ 1A, 2V - - - 50MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92AP - NPN 500mV @ 100mA, 1A 80 V
STX826
STX826
STMicroelectronics
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 - - - - - - - - 3 A 100 @ 100mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92-3 - PNP 1.1V @ 150mA, 3A 30 V
2SB804-D-T1-AZ
2SB804-D-T1-AZ
Renesas
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DCX53-13
DCX53-13
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Diodes Incorporated
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP 500mV @ 50mA, 500mA 80 V
DCX53-16-13
DCX53-16-13
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Diodes Incorporated
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP 500mV @ 50mA, 500mA 80 V
Showing 9201-9250 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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