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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SC2001-T-A
2SC2001-T-A
Renesas
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2SC3398-TB-E
2SC3398-TB-E
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2SC3618-T1-AZ
2SC3618-T1-AZ
Renesas
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2SC4995YD-TL-E
2SC4995YD-TL-E
Renesas
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2SD1145G
2SD1145G
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2SC3070-AE
2SC3070-AE
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2SC5310-5-TB-E
2SC5310-5-TB-E
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2SC4520S-TD-E
2SC4520S-TD-E
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2SD1145F
2SD1145F
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2SC1941-AZ
2SC1941-AZ
Renesas
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2SD1145F-AE
2SD1145F-AE
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MMBT5551
MMBT5551
NTE Electronics
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 - - - - - - - - 600 mA 80 @ 10mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - NPN 200mV @ 5mA, 50mA 160 V
ZXTP25100CFHQTA
ZXTP25100CFHQTA
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Diodes Incorporated
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 - - - - - - - - 1 A 200 @ 10mA, 2V - - - 180MHz - - Surface Mount -55°C ~ 150°C (TJ) 730 mW - - SOT-23-3 - PNP 310mV @ 20mA, 500mA 100 V
BC846BB5000
BC846BB5000
Infineon Technologies
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 600mV @ 5mA, 100mA 65 V
BC856BM315
BC856BM315
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NXP Semiconductors
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BC860BMTF
BC860BMTF
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On Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 310 mW - - SOT-23-3 - PNP 650mV @ 5mA, 100mA 45 V
2SC5565-TD-E
2SC5565-TD-E
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PMV130ENEA,215
PMV130ENEA,215
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Nexperia USA Inc.
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BCP56-16H,115
BCP56-16H,115
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NXP Semiconductors
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BC846BM315
BC846BM315
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NXP Semiconductors
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 250 mW - - DFN1006B-3 - NPN 200mV @ 500µA, 10mA 65 V
FJAF4210RTU
FJAF4210RTU
On Semiconductor
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 - - - - - - - - 10 A 50 @ 3A, 4V - - - 30MHz - - Through Hole 150°C (TJ) 80 W - - TO-3PF-3 - PNP 500mV @ 500mA, 5A 140 V
NSBA143ZDXV6
NSBA143ZDXV6
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FJP2145TU
FJP2145TU
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On Semiconductor
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 - - - - - - - - 5 A 20 @ 200mA, 5V - - - 15MHz - - Through Hole -55°C ~ 125°C (TJ) 120 W - - TO-220-3 - NPN 2V @ 300mA, 1.5A 800 V
2SB1266R-E
2SB1266R-E
Sanyo Denki
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BLF888DU112
BLF888DU112
NXP Semiconductors
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2SB808G-SPA
2SB808G-SPA
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FJMA790
FJMA790
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 - - - - - - - - 2 A 100 @ 1.5A, 1.5V - - - - - - Surface Mount 150°C (TJ) 1.56 W - - 6-MicroFET (2x2) - PNP 450mV @ 50mA, 2A 35 V
TIP122TU
TIP122TU
On Semiconductor
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 - - - - - - - - 5 A 1000 @ 3A, 3V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - NPN - Darlington 4V @ 20mA, 5A 100 V
ST631K
ST631K
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STMicroelectronics
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 - - - - - - - - 1 A 120 @ 100mA, 5V - - - - - - Through Hole 150°C (TJ) 12.5 W - - SOT-32-3 - PNP 500mV @ 50mA, 500mA 120 V
ST901TFP
ST901TFP
STMicroelectronics
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 - - - - - - - - 4 A 1500 @ 2A, 2V - - - - - - Through Hole - 80 W - - TO-220FP - NPN - Darlington 2V @ 1A, 5A 400 V
STL72
STL72
STMicroelectronics
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 - - - - - - - - 1 A 10 @ 400mA, 5V - - - - - - Through Hole 150°C (TJ) 1 W - - TO-92 - NPN 500mV @ 80mA, 400mA 400 V
STN1802
STN1802
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STMicroelectronics
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 - - - - - - - - 3 A 200 @ 100mA, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 1.6 W - - SOT-223 - NPN 400mV @ 150mA, 3A 60 V
STSA851-AP
STSA851-AP
STMicroelectronics
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 - - - - - - - - 5 A 150 @ 2A, 1V - - - 130MHz - - Through Hole 150°C (TJ) 1.1 W - - TO-92AP - NPN 450mV @ 200mA, 5A 60 V
STT13005
STT13005
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STMicroelectronics
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 - - - - - - - - 2 A 10 @ 500mA, 5V - - - - - - Through Hole 150°C (TJ) 45 W - - SOT-32-3 - NPN 1.5V @ 400mA, 1.6A 400 V
STX117-AP
STX117-AP
STMicroelectronics
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 1.2 W - - TO-92AP - PNP 2.5V @ 8mA, 2A 100 V
STX715-AP
STX715-AP
STMicroelectronics
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 - - - - - - - - 1.5 A 40 @ 1A, 2V - - - 50MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92AP - NPN 500mV @ 100mA, 1A 80 V
STX826
STX826
STMicroelectronics
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 - - - - - - - - 3 A 100 @ 100mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92-3 - PNP 1.1V @ 150mA, 3A 30 V
MMBTA14-NB05232
MMBTA14-NB05232
On Semiconductor
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2SJ190-TD-E
2SJ190-TD-E
Sanyo Denki
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PDTD123YU115
PDTD123YU115
NXP Semiconductors
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FT150R12KE3B5BDLA1
FT150R12KE3B5BDLA1
Infineon Technologies
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2SC1213C-E
2SC1213C-E
Renesas
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 - - - - - - - - 500 mA 100 @ 10mA, 3V - - - - - - Through Hole 150°C (TJ) 400 mW - - TO-92 - NPN 600mV @ 15mA, 150mA 35 V
2SD1935-6-TB-E
2SD1935-6-TB-E
Sanyo Denki
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PDTD113ZU115
PDTD113ZU115
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NXP Semiconductors
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DCX51-16-13
DCX51-16-13
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Diodes Incorporated
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP 500mV @ 50mA, 500mA 45 V
DCX52-13
DCX52-13
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Diodes Incorporated
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - PNP 500mV @ 50mA, 500mA 60 V
DCX54-13
DCX54-13
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Diodes Incorporated
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - NPN 500mV @ 50mA, 500mA 45 V
DCX54-16-13
DCX54-16-13
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Diodes Incorporated
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - NPN 500mV @ 50mA, 500mA 45 V
DCX55-13
DCX55-13
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Diodes Incorporated
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - NPN 500mV @ 50mA, 500mA 60 V
DCX55-16-13
DCX55-16-13
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Diodes Incorporated
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-89-3 - NPN 500mV @ 50mA, 500mA 60 V
Showing 8951-9000 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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