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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
KSC2682OSTU
KSC2682OSTU
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 - - - - - - - - 100 mA 100 @ 10mA, 5V - - - 200MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126-3 - NPN 500mV @ 5mA, 50mA 180 V
KSC3953DS
KSC3953DS
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 - - - - - - - - 200 mA 60 @ 10mA, 10V - - - 400MHz - - Through Hole 150°C (TJ) 1.3 W - - TO-126-3 - NPN 1V @ 3mA, 30mA 120 V
KSC2682OS
KSC2682OS
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 - - - - - - - - 100 mA 100 @ 10mA, 5V - - - 200MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126-3 - NPN 500mV @ 5mA, 50mA 180 V
KSC2682YSTU
KSC2682YSTU
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 - - - - - - - - 100 mA 160 @ 10mA, 5V - - - 200MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126-3 - NPN 500mV @ 5mA, 50mA 180 V
KSC2258STU
KSC2258STU
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 - - - - - - - - 100 mA 40 @ 40mA, 20V - - - 100MHz - - Through Hole 150°C (TJ) 4 W - - TO-126-3 - NPN 1.2V @ 5mA, 50mA 250 V
PZTA27
PZTA27
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 - - - - - - - - 800 mA 10000 @ 100mA, 5V - - - 125MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-223-4 - NPN - Darlington 1.5V @ 100µA, 100mA 60 V
FPN430
FPN430
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 - - - - - - - - 2 A 100 @ 100mA, 2V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226 - PNP 500mV @ 100mA, 1A 30 V
PN3568
PN3568
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 - - - - - - - - 1 A 40 @ 150mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 250mV @ 15mA, 150mA 60 V
TN6728A
TN6728A
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 - - - - - - - - 1.2 A 50 @ 250mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - PNP 500mV @ 10mA, 250mA 60 V
TN6716A
TN6716A
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 - - - - - - - - 2 A 50 @ 250mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - NPN 500mV @ 10mA, 250mA 60 V
TN6715A
TN6715A
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 - - - - - - - - 1.5 A 50 @ 1A, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - NPN 500mV @ 100mA, 1A 40 V
FPN330
FPN330
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 - - - - - - - - 3 A 100 @ 100mA, 2V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226 - NPN 500mV @ 100mA, 1A 30 V
KSE181STU
KSE181STU
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 - - - - - - - - 3 A 50 @ 100mA, 1V - - - 50MHz - - Through Hole - 1.5 W - - TO-126-3 - NPN 1.7V @ 600mA, 3A 60 V
KSC2688OS
KSC2688OS
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 - - - - - - - - 200 mA 60 @ 10mA, 10V - - - 80MHz - - Through Hole 150°C (TJ) 1.25 W - - TO-126 - NPN 1.5V @ 5mA, 50mA 300 V
HD1530JL
HD1530JL
STMicroelectronics
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 - - - - - - - - 26 A 5 @ 13A, 5V - - - - - - Through Hole 150°C (TJ) 200 W - - TO-264 - NPN 2.5V @ 3.25A, 13A 700 V
KSC2688OSTU
KSC2688OSTU
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 - - - - - - - - 200 mA 60 @ 10mA, 10V - - - 80MHz - - Through Hole 150°C (TJ) 1.25 W - - TO-126 - NPN 1.5V @ 5mA, 50mA 300 V
FPN330A
FPN330A
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 - - - - - - - - 3 A 250 @ 100mA, 2V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226 - NPN 450mV @ 100mA, 1A 30 V
KSC2688YSTSSTU
KSC2688YSTSSTU
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 - - - - - - - - 200 mA 100 @ 10mA, 10V - - - 80MHz - - Through Hole 150°C (TJ) 1.25 W - - TO-126 - NPN 1.5V @ 5mA, 50mA 300 V
FJC1386RTF
FJC1386RTF
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 - - - - - - - - 5 A 180 @ 500mA, 2V - - - - - - Surface Mount 150°C (TJ) 500 mW - - SOT-89-3 - PNP 1V @ 100mA, 4A 20 V
KSA1381ESTSSTU
KSA1381ESTSSTU
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 - - - - - - - - 100 mA 100 @ 10mA, 10V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 7 W - - TO-126-3 - PNP 600mV @ 2mA, 20mA 300 V
KSE180S
KSE180S
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 - - - - - - - - 3 A 50 @ 100mA, 1V - - - 50MHz - - Through Hole - 1.5 W - - TO-126-3 - NPN 1.7V @ 600mA, 3A 40 V
KSE200STSTU
KSE200STSTU
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 - - - - - - - - 5 A 45 @ 2A, 1V - - - 65MHz - - Through Hole 150°C (TJ) 15 W - - TO-126-3 - NPN 1.8V @ 1A, 5A 25 V
KSA1381ES
KSA1381ES
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 - - - - - - - - 100 mA 100 @ 10mA, 10V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 7 W - - TO-126-3 - PNP 600mV @ 2mA, 20mA 300 V
KSB772YSTSSTU
KSB772YSTSSTU
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 - - - - - - - - 3 A 160 @ 1A, 2V - - - 80MHz - - Through Hole 150°C (TJ) 1 W - - TO-126-3 - PNP 500mV @ 200mA, 2A 30 V
KSD882RS
KSD882RS
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 - - - - - - - - 3 A 60 @ 1A, 2V - - - 90MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-126-3 - NPN 500mV @ 200mA, 2A 30 V
KSB772YSTSTU
KSB772YSTSTU
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 - - - - - - - - 3 A 160 @ 1A, 2V - - - 80MHz - - Through Hole 150°C (TJ) 1 W - - TO-126-3 - PNP 500mV @ 200mA, 2A 30 V
TN6707A
TN6707A
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 - - - - - - - - 1.2 A 40 @ 250mA, 2V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226-3 - NPN 1V @ 100mA, 1A 80 V
KSD882YSTSTU
KSD882YSTSTU
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 - - - - - - - - 3 A 160 @ 1A, 2V - - - 90MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-126-3 - NPN 500mV @ 200mA, 2A 30 V
KSD882OS
KSD882OS
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 - - - - - - - - 3 A 100 @ 1A, 2V - - - 90MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-126-3 - NPN 500mV @ 200mA, 2A 30 V
KSA1381ESTSTU
KSA1381ESTSTU
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 - - - - - - - - 100 mA 100 @ 10mA, 10V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 7 W - - TO-126-3 - PNP 600mV @ 2mA, 20mA 300 V
KSD882YSTSSTU
KSD882YSTSSTU
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 - - - - - - - - 3 A 160 @ 1A, 2V - - - 90MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-126-3 - NPN 500mV @ 200mA, 2A 30 V
FJN13003BU
FJN13003BU
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 - - - - - - - - 1.5 A 9 @ 500mA, 2V - - - 4MHz - - Through Hole 150°C (TJ) 1.1 W - - TO-92-3 - NPN 3V @ 500mA, 1.5A 400 V
FPN430A
FPN430A
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 - - - - - - - - 2 A 250 @ 100mA, 2V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-226 - PNP 450mV @ 100mA, 1A 30 V
MJE200TSTU
MJE200TSTU
On Semiconductor
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 - - - - - - - - 5 A 45 @ 2A, 1V - - - 65MHz - - Through Hole 150°C (TJ) 15 W - - TO-126-3 - NPN 1.8V @ 1A, 5A 25 V
KSD985OSTU
KSD985OSTU
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 - - - - - - - - 1.5 A 4000 @ 1A, 2V - - - - - - Through Hole 150°C (TJ) 1 W - - TO-126-3 - NPN - Darlington 1.5V @ 1mA, 1A 60 V
KSA1220AYSTSTU
KSA1220AYSTSTU
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 - - - - - - - - 1.2 A 160 @ 300mA, 5V - - - 175MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126 - PNP 700mV @ 200mA, 1A 160 V
KSC2752OS
KSC2752OS
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 - - - - - - - - 500 mA 30 @ 50mA, 5V - - - - - - Through Hole 150°C (TJ) 1 W - - TO-126-3 - NPN 1V @ 60mA, 300mA 400 V
KSB744OSTU
KSB744OSTU
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 - - - - - - - - 3 A 100 @ 500mA, 5V - - - 45MHz - - Through Hole 150°C (TJ) 1 W - - TO-126-3 - PNP 2V @ 150mA, 1.5A 45 V
KSC2690AYSTSTU
KSC2690AYSTSTU
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 - - - - - - - - 1.2 A 160 @ 300mA, 5V - - - 155MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126-3 - NPN 700mV @ 200mA, 1A 160 V
KSC2690AOSTSTU
KSC2690AOSTSTU
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 - - - - - - - - 1.2 A 100 @ 300mA, 5V - - - 155MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126-3 - NPN 700mV @ 200mA, 1A 160 V
KSE340S
KSE340S
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 - - - - - - - - 500 mA 30 @ 50mA, 10V - - - - - - Through Hole 150°C (TJ) 20 W - - TO-126-3 - NPN - 300 V
KSC2690AOS
KSC2690AOS
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 - - - - - - - - 1.2 A 100 @ 300mA, 5V - - - 155MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126-3 - NPN 700mV @ 200mA, 1A 160 V
KSA1220AOS
KSA1220AOS
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 - - - - - - - - 1.2 A 100 @ 300mA, 5V - - - 175MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126 - PNP 700mV @ 200mA, 1A 160 V
KSE340STSTU
KSE340STSTU
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 - - - - - - - - 500 mA 30 @ 50mA, 10V - - - - - - Through Hole 150°C (TJ) 20 W - - TO-126-3 - NPN - 300 V
KSE350S
KSE350S
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 - - - - - - - - 500 mA 30 @ 50mA, 10V - - - - - - Through Hole 150°C (TJ) 20 W - - TO-126-3 - PNP - 300 V
KSE13003H1AS
KSE13003H1AS
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 - - - - - - - - 1.5 A 9 @ 500mA, 2V - - - 4MHz - - Through Hole 150°C (TJ) 20 W - - TO-126-3 - NPN 3V @ 500mA, 1.5A 400 V
KSE13003H2AS
KSE13003H2AS
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 - - - - - - - - 1.5 A 14 @ 500mA, 2V - - - 4MHz - - Through Hole 150°C (TJ) 20 W - - TO-126-3 - NPN 3V @ 500mA, 1.5A 400 V
KSE13003AS
KSE13003AS
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 - - - - - - - - 1.5 A 8 @ 500mA, 2V - - - 4MHz - - Through Hole 150°C (TJ) 20 W - - TO-126-3 - NPN 3V @ 500mA, 1.5A 400 V
KSE13003ASTU
KSE13003ASTU
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 - - - - - - - - 1.5 A 8 @ 500mA, 2V - - - 4MHz - - Through Hole 150°C (TJ) 20 W - - TO-126-3 - NPN 3V @ 500mA, 1.5A 400 V
MJE180PWD
MJE180PWD
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 - - - - - - - - 3 A 50 @ 100mA, 1V - - - 50MHz - - Through Hole 150°C (TJ) 1.5 W - - TO-126 - NPN 1.7V @ 600mA, 3A 40 V
Showing 6301-6350 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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