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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SA1470S
2SA1470S
On Semiconductor
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MPS6514
MPS6514
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 - - - - - - - - 200 mA 150 @ 2mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 5mA, 50mA 25 V
KSC1008CYBU
KSC1008CYBU
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 - - - - - - - - 700 mA 120 @ 50mA, 2V - - - 50MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92-3 - NPN 400mV @ 50mA, 500mA 60 V
KSA733CYBU
KSA733CYBU
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 - - - - - - - - 150 mA 120 @ 1mA, 6V - - - 180MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92-3 - PNP 300mV @ 10mA, 100mA 50 V
MJE171STU
MJE171STU
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 - - - - - - - - 3 A 50 @ 100mA, 1V - - - 50MHz - - Through Hole 150°C (TJ) 1.5 W - - TO-126-3 - PNP 1.7V @ 600mA, 3A 60 V
MMBTA42LT1
MMBTA42LT1
Infineon Technologies
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Surface Mount - 225 mW - - SOT-23-3 (TO-236) - NPN 500mV @ 2mA, 20mA 300 V
MMBTA06LT1
MMBTA06LT1
Infineon Technologies
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount - 225 mW - - SOT-23-3 (TO-236) - NPN 250mV @ 10mA, 100mA 80 V
MJD32CTM
MJD32CTM
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Surface Mount 150°C (TJ) 1.56 W - - D-Pak - PNP 1.2V @ 375mA, 3A 100 V
KSE5020S
KSE5020S
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 - - - - - - - - 3 A 15 @ 300mA, 5V - - - 18MHz - - Through Hole 150°C (TJ) 30 W - - TO-126-3 - NPN 1V @ 300mA, 1.5A 500 V
SS9014BBU
SS9014BBU
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 - - - - - - - - 100 mA 100 @ 1mA, 5V - - - 270MHz - - Through Hole 150°C (TJ) 450 mW - - TO-92-3 - NPN 300mV @ 5mA, 100mA 45 V
FJPF13007H2TTU
FJPF13007H2TTU
On Semiconductor
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 - - - - - - - - 8 A 26 @ 2A, 5V - - - 4MHz - - Through Hole 150°C (TJ) 40 W - - TO-220F-3 - NPN 3V @ 2A, 8A 400 V
TIP127
TIP127
Harris Semiconductor
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 - - - - - - - - 5 A 1000 @ 3A, 3V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220AB - PNP - Darlington 4V @ 20mA, 5A 100 V
FJP13009
FJP13009
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 - - - - - - - - 12 A 8 @ 5A, 5V - - - 4MHz - - Through Hole 150°C (TJ) 100 W - - TO-220-3 - NPN 3V @ 3A, 12A 400 V
2N3391A
2N3391A
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 - - - - - - - - 500 mA 250 @ 2mA, 4.5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - 25 V
KSE700STU
KSE700STU
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 - - - - - - - - 4 A 750 @ 1.5A, 3V - - - - - - Through Hole 150°C (TJ) 40 W - - TO-126-3 - PNP - Darlington 2.5V @ 30mA, 1.5A 60 V
2N3415
2N3415
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 - - - - - - - - 500 mA 180 @ 2mA, 4.5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 300mV @ 3mA, 50mA 25 V
KSC2330RTA
KSC2330RTA
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 - - - - - - - - 100 mA 40 @ 20mA, 10V - - - 50MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 500mV @ 1mA, 10mA 300 V
KSD1616YTA
KSD1616YTA
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 - - - - - - - - 1 A 135 @ 100mA, 2V - - - 160MHz - - Through Hole 150°C (TJ) 750 mW - - TO-92-3 - NPN 300mV @ 50mA, 1A 50 V
2N5401_D28Z
2N5401_D28Z
On Semiconductor
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 - - - - - - - - 600 mA 60 @ 10mA, 5V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 500mV @ 5mA, 50mA 150 V
MMBT2907A-D87Z
MMBT2907A-D87Z
On Semiconductor
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - PNP 1.6V @ 50mA, 500mA 60 V
2N1482
2N1482
Harris Semiconductor
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 - - - - - - - - 1.5 A 35 @ 200mA, 4V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5AA - NPN 750mV @ 10mA, 200mA 55 V
MPSA42RA
MPSA42RA
On Semiconductor
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 2mA, 20mA 300 V
FJL6825ATU
FJL6825ATU
On Semiconductor
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 - - - - - - - - 25 A 6 @ 12A, 5V - - - - - - Through Hole 150°C (TJ) 200 W - - HPM F2 - NPN 3V @ 3A, 12A 750 V
SS9014BTA
SS9014BTA
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 - - - - - - - - 100 mA 100 @ 1mA, 5V - - - 270MHz - - Through Hole 150°C (TJ) 450 mW - - TO-92-3 - NPN 300mV @ 5mA, 100mA 45 V
KSP13TF
KSP13TF
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On Semiconductor
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 125MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
2N6519TA
2N6519TA
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On Semiconductor
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 - - - - - - - - 500 mA 40 @ 50mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 1V @ 5mA, 50mA 300 V
KSB1116YBU
KSB1116YBU
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 - - - - - - - - 1 A 135 @ 100mA, 2V - - - 120MHz - - Through Hole 150°C (TJ) 750 mW - - TO-92-3 - PNP 300mV @ 50mA, 1A 50 V
KSA1201YTF
KSA1201YTF
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 - - - - - - - - 800 mA 120 @ 100mA, 5V - - - 120MHz - - Surface Mount 150°C (TJ) 1 W - - SOT-89-3 - PNP 1V @ 50mA, 500mA 120 V
KSB1116ALTA
KSB1116ALTA
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 - - - - - - - - 1 A 300 @ 100mA, 2V - - - 120MHz - - Through Hole 150°C (TJ) 750 mW - - TO-92-3 - PNP 300mV @ 50mA, 1A 60 V
SJE7075LFAJ
SJE7075LFAJ
On Semiconductor
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KSA1406CSTU
KSA1406CSTU
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 - - - - - - - - 100 mA 40 @ 10mA, 10V - - - 400MHz - - Through Hole 150°C (TJ) 1.2 W - - TO-126-3 - PNP 800mV @ 3mA, 30mA 200 V
PN200RM
PN200RM
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 - - - - - - - - 500 mA 100 @ 150mA, 1V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 20mA, 200mA 45 V
KSC3569YTU
KSC3569YTU
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On Semiconductor
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 - - - - - - - - 2 A 40 @ 100mA, 5V - - - - - - Through Hole 150°C (TJ) 15 W - - TO-220F-3 - NPN 1V @ 100mA, 500mA 400 V
TIP42
TIP42
Harris Semiconductor
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - 3MHz - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - PNP 1.5V @ 600mA, 6A 40 V
SS9012HTA
SS9012HTA
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On Semiconductor
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 - - - - - - - - 500 mA 144 @ 50mA, 1V - - - - - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - PNP 600mV @ 50mA, 500mA 20 V
KSD1417TU
KSD1417TU
On Semiconductor
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 - - - - - - - - 7 A 2000 @ 3A, 3V - - - - - - Through Hole - 2 W - - TO-220F-3 - NPN - Darlington 2V @ 14mA, 7A 60 V
FJC2383YTF
FJC2383YTF
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 - - - - - - - - 1 A 160 @ 200mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89-3 - NPN 1.5V @ 50mA, 500mA 160 V
MPS6513
MPS6513
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On Semiconductor
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 - - - - - - - - 200 mA 90 @ 2mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 5mA, 50mA 30 V
2N5551YBU
2N5551YBU
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 - - - - - - - - 600 mA 180 @ 10mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 200mV @ 5mA, 50mA 160 V
KSD526OTU
KSD526OTU
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On Semiconductor
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 - - - - - - - - 4 A 70 @ 500mA, 5V - - - 8MHz - - Through Hole 150°C (TJ) 30 W - - TO-220-3 - NPN 1.5V @ 300mA, 3A 80 V
MPS651
MPS651
On Semiconductor
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 - - - - - - - - 800 mA 75 @ 1A, 2V - - - 75MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 200mA, 2A 60 V
KSD986YS
KSD986YS
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 - - - - - - - - 1.5 A 8000 @ 1A, 2V - - - - - - Through Hole 150°C (TJ) 1 W - - TO-126-3 - NPN - Darlington 1.5V @ 1mA, 1A 80 V
BD242C
BD242C
Harris Semiconductor
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 - - - - - - - - 3 A 25 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 40 W - - TO-220 - PNP 1.2V @ 600mA, 3A 100 V
BC557ABU
BC557ABU
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 45 V
2N3905BU
2N3905BU
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 - - - - - - - - 200 mA 50 @ 10mA, 1V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP 400mV @ 5mA, 50mA 40 V
BC307BBU
BC307BBU
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 - - - - - - - - 100 mA 180 @ 2mA, 5V - - - 130MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 500mV @ 5mA, 100mA 45 V
KSC2335RTU
KSC2335RTU
On Semiconductor
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 - - - - - - - - 7 A 20 @ 1A, 5V - - - - - - Through Hole 150°C (TJ) 1.5 W - - TO-220-3 - NPN 1V @ 600mA, 3A 400 V
BC549BBU
BC549BBU
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 30 V
BC560CBU
BC560CBU
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 45 V
BCM856DS/DG/B2115
BCM856DS/DG/B2115
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NXP Semiconductors
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Showing 6351-6400 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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