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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BC237B PBFREE
BC237B PBFREE
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Central Semiconductor Corp
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 100 mA 180 @ 2mA, 5V 150MHz Through Hole -65°C ~ 150°C (TJ) 300 mW TO-92 NPN 600mV @ 5mA, 100mA 50 V
BC546A PBFREE
BC546A PBFREE
Download Datasheet for BC546A PBFREE
Central Semiconductor Corp
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole -65°C ~ 150°C (TJ) 500 mW TO-92 NPN 600mV @ 5mA, 100mA 80 V
2SA2071P5T100
2SA2071P5T100
ROHM Semiconductor
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 3 A 180 @ 2mA, 6V - Surface Mount 150°C (TJ) 500 mW MPT3 NPN 500mV @ 1mA, 10mA 60 V
FZT1053AQTA
FZT1053AQTA
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Diodes Incorporated
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 4.5 A 300 @ 1A, 2V 140MHz Surface Mount -55°C ~ 150°C (TJ) 1.2 W SOT-223-3 NPN 440mV @ 200mA, 4.5A 75 V
ZX5T1951GQTA
ZX5T1951GQTA
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Diodes Incorporated
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 6 A 100 @ 2A, 2V 120MHz Surface Mount -55°C ~ 150°C (TJ) 1.6 W SOT-223-3 PNP 260mV @ 500mA, 5A 60 V
NSVBCP68T1G
NSVBCP68T1G
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On Semiconductor
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 1 A 85 @ 500mA, 1V 60MHz Surface Mount -65°C ~ 150°C (TJ) 1.5 W SOT-223 (TO-261) NPN 500mV @ 100mA, 1A 20 V
DXTP03200BP5Q-13
DXTP03200BP5Q-13
Download Datasheet for DXTP03200BP5Q-13
Diodes Incorporated
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 2 A 100 @ 1A, 5V 105MHz Surface Mount -55°C ~ 150°C (TJ) 740 mW PowerDI™ 5 PNP 275mV @ 400mA, 2A 200 V
2SC2881-O-TP
2SC2881-O-TP
Micro Commercial Co.
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 800 mA 80 @ 100mA, 5V 120MHz Surface Mount 150°C (TJ) 1 W SOT-89 NPN 1V @ 50mA, 500mA 120 V
ZXT10P20DE6QTA
ZXT10P20DE6QTA
Download Datasheet for ZXT10P20DE6QTA
Diodes Incorporated
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 2.5 A 300 @ 100mA, 2V 180MHz Surface Mount -55°C ~ 150°C (TJ) 1.1 W SOT-26 PNP 350mV @ 150mA, 2.5A 20 V
2SB1188T100P
2SB1188T100P
Download Datasheet for 2SB1188T100P
ROHM Semiconductor
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 2 A 82 @ 500mA, 3V 100MHz Surface Mount 150°C (TJ) 2 W MPT3 PNP 800mV @ 200mA, 2A 32 V
2SD1766T100P
2SD1766T100P
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ROHM Semiconductor
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 2 A 82 @ 500mA, 3V 100MHz Surface Mount 150°C (TJ) 2 W MPT3 NPN 800mV @ 200mA, 2A 32 V
2SD1766T100R
2SD1766T100R
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ROHM Semiconductor
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 2 A 180 @ 500mA, 3V 100MHz Surface Mount 150°C (TJ) 2 W MPT3 NPN 800mV @ 200mA, 2A 32 V
2SA1971(TE12L,F)
2SA1971(TE12L,F)
Download Datasheet for 2SA1971(TE12L,F)
Toshiba
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 500 mA 140 @ 100mA, 5V 35MHz Surface Mount 150°C (TJ) 500 mW PW-MINI PNP 1V @ 10mA, 100mA 400 V
ZXTP2006E6TA
ZXTP2006E6TA
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Diodes Incorporated
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 3.5 A 300 @ 1A, 2V 110MHz Surface Mount -55°C ~ 150°C (TJ) 1.1 W SOT-23-6 PNP 130mV @ 350mA, 3.5A 20 V
PBSS304NXZ
PBSS304NXZ
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Nexperia USA Inc.
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 4.7 A 300 @ 500mA, 2V 130MHz Surface Mount 150°C (TJ) - SOT-89 NPN 290mV @ 80mA, 4A 60 V
BC184B PBFREE
BC184B PBFREE
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Central Semiconductor Corp
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 200 mA 250 @ 2mA, 5V 280MHz Through Hole -65°C ~ 150°C (TJ) 300 mW TO-92 NPN 600mV @ 5mA, 100mA 30 V
2C5000
2C5000
Microchip Technology
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FZT749QTA
FZT749QTA
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Diodes Incorporated
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 3 A 100 @ 1A, 2V 160MHz Surface Mount -55°C ~ 150°C (TJ) 1.2 W SOT-223 PNP 600mV @ 300mA, 3A 25 V
BCP49H6327XTSA1
BCP49H6327XTSA1
Download Datasheet for BCP49H6327XTSA1
Infineon Technologies
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 500 mA 10000 @ 100mA, 5V 200MHz Surface Mount 150°C (TJ) 1.5 W PG-SOT223-4-10 NPN - Darlington 1V @ 100µA, 100mA 60 V
US6T6TR
US6T6TR
ROHM Semiconductor
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 2 A 270 @ 200mA, 2V 360MHz Surface Mount 150°C (TJ) 1 W TUMT6 PNP 180mV @ 50mA, 1A 30 V
US6T7TR
US6T7TR
ROHM Semiconductor
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 1.5 A 270 @ 100mA, 2V 280MHz Surface Mount 150°C (TJ) 1 W TUMT6 PNP 370mV @ 50mA, 1A 30 V
US6X5TR
US6X5TR
ROHM Semiconductor
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 2 A 270 @ 200mA, 2V 360MHz Surface Mount 150°C (TJ) 1 W TUMT6 NPN 180mV @ 50mA, 1A 12 V
US6X6TR
US6X6TR
ROHM Semiconductor
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 1.5 A 270 @ 100mA, 2V 300MHz Surface Mount 150°C (TJ) 1 W TUMT6 NPN 350mV @ 50mA, 1A 30 V
BCP69-25-TP
BCP69-25-TP
Download Datasheet for BCP69-25-TP
Micro Commercial Co.
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 1 A 140 @ 10mA, 1.8V 40MHz Surface Mount 150°C (TJ) 1 W SOT-223 PNP 500mV @ 100mA, 1A 20 V
BCP69-16-TP
BCP69-16-TP
Download Datasheet for BCP69-16-TP
Micro Commercial Co.
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 1 A 140 @ 10mA, 1.8V 40MHz Surface Mount 150°C (TJ) 1 W SOT-223 PNP 500mV @ 100mA, 1A 20 V
FCX558QTA
FCX558QTA
Diodes Incorporated
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 200 mA 100 @ 50mA, 10V 50MHz Surface Mount -65°C ~ 150°C (TJ) 700 mW SOT-89-3 PNP 500mV @ 6mA, 50mA 400 V
2SD2098T100S
2SD2098T100S
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ROHM Semiconductor
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 5 A 270 @ 500mA, 2V 150MHz Surface Mount 150°C (TJ) 2 W MPT3 NPN 1V @ 100mA, 4A 20 V
BD882-R-TP
BD882-R-TP
Micro Commercial Co.
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 3 A 60 @ 1A, 2V 50MHz Surface Mount -55°C ~ 150°C (TJ) 500 mW SOT-89 NPN 500mV @ 200mA, 2A 30 V
ZX5T3ZTC
ZX5T3ZTC
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Diodes Incorporated
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 5.5 A 200 @ 500mA, 2V 152MHz Surface Mount -55°C ~ 150°C (TJ) 2.1 W SOT-89-3 PNP 185mV @ 550mA, 5.5A 40 V
ZX5T2E6TA
ZX5T2E6TA
Download Datasheet for ZX5T2E6TA
Diodes Incorporated
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 3.5 A 300 @ 1A, 2V 110MHz Surface Mount -55°C ~ 150°C (TJ) 1.1 W SOT-23-6 PNP 130mV @ 350mA, 3.5A 20 V
2SD2661T100
2SD2661T100
ROHM Semiconductor
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 2 A 270 @ 200mA, 2V 360MHz Surface Mount 150°C (TJ) 2 W MPT3 NPN 180mV @ 50mA, 1A 12 V
2SB1698T100
2SB1698T100
ROHM Semiconductor
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 1.5 A 270 @ 100mA, 2V 280MHz Surface Mount 150°C (TJ) 2 W MPT3 PNP 370mV @ 50mA, 1A 30 V
BCV48H6327XTSA1
BCV48H6327XTSA1
Download Datasheet for BCV48H6327XTSA1
Infineon Technologies
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 500 mA 10000 @ 100mA, 5V 200MHz Surface Mount 150°C (TJ) 1 W PG-SOT89 PNP - Darlington 1V @ 100µA, 100mA 60 V
BSP50-QX
BSP50-QX
Nexperia USA Inc.
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 1 A 2000 @ 500mA, 10V 200MHz Surface Mount 150°C (TJ) 1.25 W SOT-223 NPN - Darlington 1.3V @ 500µA, 500mA 45 V
BSP62-QX
BSP62-QX
Nexperia USA Inc.
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 1 A 2000 @ 500mA, 10V 200MHz Surface Mount 150°C (TJ) 1.25 W SOT-223 PNP - Darlington 1.3V @ 500µA, 500mA 80 V
BSP51-QX
BSP51-QX
Nexperia USA Inc.
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 1 A 2000 @ 500mA, 10V 200MHz Surface Mount 150°C (TJ) 1.25 W SOT-223 NPN - Darlington 1.3V @ 500µA, 500mA 60 V
2SA1900T100Q
2SA1900T100Q
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ROHM Semiconductor
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 1 A 120 @ 500mA, 3V 150MHz Surface Mount 150°C (TJ) 2 W MPT3 PNP 400mV @ 50mA, 500mA 50 V
2SAR554PT100
2SAR554PT100
ROHM Semiconductor
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 1.5 A 120 @ 100mA, 3V 340MHz Surface Mount 150°C (TJ) 2 W MPT3 PNP 400mV @ 25mA, 500mA 80 V
FCX688BTA
FCX688BTA
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Diodes Incorporated
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 3 A 500 @ 100mA, 2V 150MHz Surface Mount -55°C ~ 150°C (TJ) 2 W SOT-89-3 NPN 400mV @ 50mA, 4A 12 V
MJD31CUQ-13
MJD31CUQ-13
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Diodes Incorporated
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 3 A 25 @ 1A, 4V 3MHz Surface Mount -55°C ~ 150°C (TJ) 1.6 W TO-252, (D-Pak) NPN 700mV @ 375mA, 3A 100 V
CMUT2222A BK PBFREE
CMUT2222A BK PBFREE
Download Datasheet for CMUT2222A BK PBFREE
Central Semiconductor Corp
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 600 mA 100 @ 150mA, 1V 300MHz Surface Mount -65°C ~ 150°C (TJ) 250 mW SOT-523 NPN 1V @ 50mA, 500mA 40 V
2SD1758TLP
2SD1758TLP
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ROHM Semiconductor
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 2 A 82 @ 500mA, 3V 100MHz Surface Mount 150°C (TJ) 10 W CPT3 NPN 800mV @ 200mA, 2A 32 V
PZTA42H6327XTSA1
PZTA42H6327XTSA1
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Infineon Technologies
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 500 mA 40 @ 30mA, 10V 70MHz Surface Mount 150°C (TJ) 1.5 W PG-SOT223-4 NPN 500mV @ 2mA, 20mA 300 V
2SA2059(TE12L,F)
2SA2059(TE12L,F)
Download Datasheet for 2SA2059(TE12L,F)
Toshiba
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 3 A 200 @ 500mA, 2V - Surface Mount 150°C (TJ) 1 W PW-MINI PNP 190mV @ 53mA, 1.6A 20 V
BSR30-QX
BSR30-QX
Nexperia USA Inc.
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 1 A 40 @ 100mA, 5V 100MHz Surface Mount 150°C (TJ) 1.35 W SOT-89 PNP 500mV @ 50mA, 500mA 60 V
BSR33-QX
BSR33-QX
Nexperia USA Inc.
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 1 A 100 @ 100mA, 5V 100MHz Surface Mount 150°C (TJ) 1.35 W SOT-89 PNP 500mV @ 50mA, 500mA 80 V
BSR43-QX
BSR43-QX
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Nexperia USA Inc.
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 1 A 100 @ 100mA, 5V 100MHz Surface Mount 150°C (TJ) 1.35 W SOT-89 NPN 500mV @ 50mA, 500mA 80 V
BSR41-QX
BSR41-QX
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Nexperia USA Inc.
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 1 A 100 @ 100mA, 5V 100MHz Surface Mount 150°C (TJ) 1.35 W SOT-89 NPN 500mV @ 50mA, 500mA 60 V
BSR31-QX
BSR31-QX
Nexperia USA Inc.
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 1 A 100 @ 100mA, 5V 100MHz Surface Mount 150°C (TJ) 1.35 W SOT-89 PNP 500mV @ 50mA, 500mA 60 V
ZXT13P12DE6TA
ZXT13P12DE6TA
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Diodes Incorporated
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 4 A 300 @ 1A, 2V 55MHz Surface Mount -55°C ~ 150°C (TJ) 1.1 W SOT-23-6 PNP 175mV @ 400mA, 4A 12 V
Showing 6351-6400 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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