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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BC327-40ZL1G
BC327-40ZL1G
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On Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 1V - - - 260MHz - - Through Hole -55°C ~ 150°C (TJ) 1.5 W - - TO-92 (TO-226) - PNP 700mV @ 50mA, 500mA 45 V
BC557CZL1G
BC557CZL1G
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On Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 320MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 650mV @ 5mA, 100mA 45 V
MPSA42ZL1G
MPSA42ZL1G
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On Semiconductor
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 500mV @ 2mA, 20mA 300 V
BC237BRL1G
BC237BRL1G
On Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN 600mV @ 5mA, 100mA 45 V
2SD1436K-E
2SD1436K-E
Renesas
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2SD991K
2SD991K
Renesas
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2N2219AJTXV
2N2219AJTXV
Texas Instruments
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MJ13091
MJ13091
Harris Semiconductor
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 - - - - - - - - 15 A 8 @ 10A, 3V - - - - - - Through Hole -65°C ~ 200°C (TJ) 175 W - - TO-3 - NPN 3V @ 3A, 15A 6 V
RJH6678
RJH6678
Harris Semiconductor
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 - - - - - - - - 15 A 8 @ 15A, 3V - - - 50MHz - - Through Hole -65°C ~ 150°C (TJ) 175 W - - TO-218 Isolated - NPN 1.5V @ 3A, 15A 400 V
MJH16012
MJH16012
Harris Semiconductor
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JANTX2N2907AUB
JANTX2N2907AUB
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
2N5077
2N5077
Vishay Dale
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 - - - - - - - - 3 A 90 @ 500mA, 5V - - - 40MHz - - Stud Mount - 40 W - - TO-59 - - 2V @ 300mA, 3A 250 V
2N3019S
2N3019S
Microchip Technology
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 - - - - - - - - 1 A 50 @ 500mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-39 (TO-205AD) - NPN 500mV @ 50mA, 500mA 80 V
BC856AW,115
BC856AW,115
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - PNP 600mV @ 5mA, 100mA 65 V
BC858W,115
BC858W,115
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - PNP 600mV @ 5mA, 100mA 30 V
MMST3906-TP
MMST3906-TP
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Micro Commercial
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - PNP 300mV @ 5mA, 50mA 40 V
2PA1576S,135
2PA1576S,135
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Nexperia USA Inc.
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 - - - - - - - - 150 mA 270 @ 1mA, 6V - - - 100MHz - - Surface Mount 150°C (TJ) 200 mW - - SOT-323 - PNP 500mV @ 5mA, 50mA 50 V
BC847AQBZ
BC847AQBZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 340 mW - - DFN1110D-3 - NPN 400mV @ 5mA, 100mA 45 V
BC847CQBZ
BC847CQBZ
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Nexperia USA Inc.
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount, Wettable Flank 150°C (TJ) 340 mW - - DFN1110D-3 - NPN 400mV @ 5mA, 100mA 45 V
BC846BW-TP
BC846BW-TP
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Micro Commercial
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount -65°C ~ 150°C - - - SOT-323 - NPN 600mV @ 5mA, 100mA 65 V
BC847BW-TP
BC847BW-TP
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Micro Commercial
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) - - - SOT-323 - NPN 600mV @ 5mA, 100mA 45 V
MMSTA06Q-7-F
MMSTA06Q-7-F
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Diodes Incorporated
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - NPN 250mV @ 10mA, 100mA 80 V
MMST2907A-TP
MMST2907A-TP
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Micro Commercial
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 200 mW - - SOT-323 - PNP 600mV @ 50mA, 500mA 60 V
BC807-40HVL
BC807-40HVL
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 80MHz - - Surface Mount 175°C (TJ) 320 mW - - TO-236AB - PNP 700mV @ 50mA, 500mA 45 V
TIP100G
TIP100G
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On Semiconductor
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 - - - - - - - - 8 A 1000 @ 3A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 2.5V @ 80mA, 8A 60 V
BSS64AT116
BSS64AT116
ROHM Semiconductor
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 - - - - - - - - 100 mA 30 @ 25mA, 1V - - - 140MHz - - Surface Mount 150°C (TJ) 200 mW - - SST3 - NPN 300mV @ 10mA, 100mA 100 V
2SCR502U3HZGT106
2SCR502U3HZGT106
ROHM Semiconductor
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 - - - - - - - - 500 mA 200 @ 100mA, 2V - - - 360MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 300mV @ 10mA, 200mA 30 V
PBSS3515MB,315
PBSS3515MB,315
Download Datasheet for PBSS3515MB,315
Nexperia USA Inc.
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 - - - - - - - - 500 mA 200 @ 10mA, 2V - - - 280MHz - - Surface Mount 150°C (TJ) 250 mW - - DFN1006B-3 - PNP 25mV @ 500µA, 10mA 15 V
APT27ZTR-G1
APT27ZTR-G1
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Diodes Incorporated
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 - - - - - - - - 800 mA 15 @ 100mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 800 mW - - TO-92 - NPN 500mV @ 40mA, 200mA 450 V
BC847BU3HZGT106
BC847BU3HZGT106
ROHM Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 600mV @ 5mA, 100mA 45 V
BC69PASX
BC69PASX
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Nexperia USA Inc.
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 - - - - - - - - 2 A 85 @ 500mA, 1V - - - 140MHz - - Surface Mount 150°C (TJ) 420 mW - - DFN2020D-3 - PNP 600mV @ 200mA, 2A 20 V
2SCR512P5T100
2SCR512P5T100
ROHM Semiconductor
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 - - - - - - - - 2 A 200 @ 100mA, 2V - - - 320MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - NPN 400mV @ 35mA, 700mA 30 V
BCP5616TTA
BCP5616TTA
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Diodes Incorporated
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 2.5 W - - SOT-223-3 - NPN 500mV @ 50mA, 500mA 80 V
BCP54TA
BCP54TA
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Diodes Incorporated
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223-3 - NPN 500mV @ 50mA, 500mA 45 V
BCP53TA
BCP53TA
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Diodes Incorporated
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 150MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - SOT-223-3 - PNP 500mV @ 50mA, 500mA 80 V
PBSS5350THR
PBSS5350THR
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Nexperia USA Inc.
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 - - - - - - - - 2 A 80 @ 3A, 2V - - - 100MHz - - Surface Mount 175°C (TJ) 1.44 W - - TO-236AB - PNP 390mV @ 300mA, 3A 50 V
2SD1757KT146S
2SD1757KT146S
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ROHM Semiconductor
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 - - - - - - - - 500 mA 120 @ 100mA, 3V - - - 150MHz - - Surface Mount 150°C (TJ) 200 mW - - SMT3 - NPN 400mV @ 50mA, 500mA 15 V
MCH6202-TL-E
MCH6202-TL-E
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On Semiconductor
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 - - - - - - - - 1.5 A 200 @ 100mA, 2V - - - 500MHz - - Surface Mount 150°C (TJ) 1 W - - 6-MCPH - NPN 225mV @ 15mA, 750mA 30 V
2SCR554PFRAT100
2SCR554PFRAT100
ROHM Semiconductor
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 - - - - - - - - 1.5 A 120 @ 100mA, 3V - - - 300MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - NPN 350mV @ 25mA, 500mA 80 V
CMPTA94 TR PBFREE
CMPTA94 TR PBFREE
Download Datasheet for CMPTA94 TR PBFREE
Central Semiconductor Corp
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 - - - - - - - - 300 mA 50 @ 10mA, 10V - - - 20MHz - - Surface Mount -65°C ~ 150°C (TJ) 350 mW - - SOT-23 - PNP 750mV @ 5mA, 50mA 400 V
PBHV9115TLHR
PBHV9115TLHR
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Nexperia USA Inc.
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 - - - - - - - - 1 A 70 @ 50mA, 10V - - - 55MHz - - Surface Mount 150°C (TJ) - - - TO-236AB - PNP 300mV @ 100mA, 500mA 150 V
PBSS9410PA,115
PBSS9410PA,115
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Nexperia USA Inc.
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 - - - - - - - - 2.7 A 170 @ 1A, 2V - - - 115MHz - - Surface Mount 150°C (TJ) 2.1 W - - 3-HUSON (2x2) - PNP 450mV @ 135mA, 2.7A 100 V
BCX52-10,115
BCX52-10,115
Download Datasheet for BCX52-10,115
Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 145MHz - - Surface Mount 150°C (TJ) 1.3 W - - SOT-89 - PNP 500mV @ 50mA, 500mA 60 V
2SCR533P5T100
2SCR533P5T100
ROHM Semiconductor
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 - - - - - - - - 3 A 180 @ 50mA, 3V - - - 320MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - NPN 350mV @ 50mA, 1A 50 V
2SB1695TL
2SB1695TL
ROHM Semiconductor
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 - - - - - - - - 1.5 A 270 @ 100mA, 2V - - - 280MHz - - Surface Mount 150°C (TJ) 500 mW - - TSMT3 - PNP 370mV @ 50mA, 1A 30 V
PHPT61003PYX
PHPT61003PYX
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Nexperia USA Inc.
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 - - - - - - - - 3 A 150 @ 500mA, 10V - - - 125MHz - - Surface Mount 175°C (TJ) 1.25 W - - LFPAK56, Power-SO8 - PNP 360mV @ 200mA, 2A 100 V
2SCR552PFRAT100
2SCR552PFRAT100
ROHM Semiconductor
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 - - - - - - - - 3 A 200 @ 500mA, 2V - - - 280MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - NPN 400mV @ 50mA, 1A 30 V
PXTA14,115
PXTA14,115
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Nexperia USA Inc.
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 - - - - - - - - 500 mA 20000 @ 100mA, 5V - - - 125MHz - - Surface Mount 150°C (TJ) 1.3 W - - SOT-89 - NPN - Darlington 1.5V @ 100µA, 100mA 30 V
2SCR514PT100
2SCR514PT100
ROHM Semiconductor
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 - - - - - - - - 700 mA 120 @ 100mA, 3V - - - 320MHz - - Surface Mount 150°C (TJ) 2 W - - MPT3 - NPN 300mV @ 15mA, 300mA 80 V
DZT955-13
DZT955-13
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Diodes Incorporated
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 - - - - - - - - 4 A 100 @ 1A, 5V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-223-3 - PNP 370mV @ 300mA, 3A 140 V
Showing 6151-6200 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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