What are Diodes - Rectifiers - Single ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Capacitance @ Vr, F | Current | Mounting Type | Operating Temperature | Reverse Recovery Time (trr) | Speed | Supplier Device Package | Technology | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diotec Semiconductor
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- | 25A | Through Hole | -50°C ~ 175°C | 1.5 µs | Standard Recovery >500ns, > 200mA (Io) | P600 | Standard | 1.1 V @ 25 A | |
Diotec Semiconductor
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- | 25A | Through Hole | -50°C ~ 175°C | 1.5 µs | Standard Recovery >500ns, > 200mA (Io) | P600 | Standard | 1.1 V @ 25 A | |
Diotec Semiconductor
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- | 25A | Through Hole | -50°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | P600 | Schottky | 570 mV @ 25 A | |
Diotec Semiconductor
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- | 25A | Through Hole | -50°C ~ 175°C | 1.5 µs | Standard Recovery >500ns, > 200mA (Io) | P600 | Standard | 1.1 V @ 25 A | |
NTE Electronics
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- | 35mA | Through Hole | -65°C ~ 200°C | - | Small Signal =< 200mA (Io), Any Speed | DO-35 | Schottky | 1 V @ 35 mA | |
Harris Semiconductor
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- | 4A | Surface Mount | -65°C ~ 175°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-252-3 (DPAK) | Avalanche | 2.1 V @ 4 A | |
Vishay Dale
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40pF @ 4V, 1MHz | 3A | Through Hole | -65°C ~ 175°C | 15 µs | Standard Recovery >500ns, > 200mA (Io) | DO-201AD | Standard | 1.2 V @ 3 A | |
Diotec Semiconductor
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- | 20A | Through Hole | -50°C ~ 150°C | 200 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Standard | 960 mV @ 20 A | |
Diotec Semiconductor
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- | 20A | Through Hole | -50°C ~ 150°C | 200 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Standard | 960 mV @ 20 A | |
Diotec Semiconductor
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- | 20A | Through Hole | -50°C ~ 150°C | 200 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Standard | 960 mV @ 20 A | |
Diotec Semiconductor
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- | 20A | Through Hole | -50°C ~ 175°C | 200 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Standard | 960 mV @ 20 A | |
Diotec Semiconductor
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- | 20A | Through Hole | -50°C ~ 150°C | 200 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Standard | 960 mV @ 20 A | |
NXP Semiconductors
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- | 20A | Through Hole | 175°C (Max) | 20 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Standard | 2.9 V @ 20 A | |
Infineon Technologies
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70pF @ 1V, 1MHz | 2A | Surface Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | PG-TO263-2 | SiC (Silicon Carbide) Schottky | 1.8 V @ 2 A | |
NTE Electronics
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- | 3A | Through Hole | -65°C ~ 175°C | - | Standard Recovery >500ns, > 200mA (Io) | DO-27 | Standard | 1.2 V @ 9.4 A | |
NTE Electronics
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- | 1A | Through Hole | -65°C ~ 150°C | 200 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-41 | Standard | 1.2 V @ 1 A | |
Harris Semiconductor
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- | 30A | Through Hole | -55°C ~ 175°C | 60 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Avalanche | 1.5 V @ 30 A | |
Vishay Dale
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- | 10A | Surface Mount | -65°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AB (D²PAK) | Schottky | 460 mV @ 10 A | |
NTE Electronics
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1pF @ 1V, 1MHz | 50mA | Through Hole | 75°C (Max) | - | Small Signal =< 200mA (Io), Any Speed | DO-7 | Standard | 1 V @ 5 mA | |
NTE Electronics
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80pF @ 0V, 1MHz | 1.9A | Through Hole | -65°C ~ 175°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-57 | Avalanche | 1.05 V @ 2 A | |
Harris Semiconductor
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- | 15A | Through Hole | -65°C ~ 175°C | 125 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Avalanche | 1.8 V @ 15 A | |
Harris Semiconductor
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- | 15A | Through Hole | -65°C ~ 175°C | 125 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Avalanche | 1.8 V @ 15 A | |
NTE Electronics
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40pF @ 4V, 1MHz | 2A | Through Hole | -65°C ~ 175°C | - | Standard Recovery >500ns, > 200mA (Io) | DO-15 | Standard | 1.1 V @ 2 A | |
Diotec Semiconductor
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- | 20A | Through Hole | -50°C ~ 175°C | 1.5 µs | Standard Recovery >500ns, > 200mA (Io) | P600 | Standard | 1.1 V @ 20 A | |
On Semiconductor
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2pF @ 0V, 1MHz | 200mA | Through Hole | 175°C (Max) | 4 ns | Small Signal =< 200mA (Io), Any Speed | DO-35 | Standard | 880 mV @ 20 mA | |
On Semiconductor
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170pF @ 4V, 1MHz | 16A | Through Hole | -65°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220-2 | Standard | 1.3 V @ 8 A | |
Vishay Dale
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On Semiconductor
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2pF @ 0V, 1MHz | 150mA | Through Hole | 175°C (Max) | 4 ns | Small Signal =< 200mA (Io), Any Speed | DO-35 | Standard | 1 V @ 50 mA | |
On Semiconductor
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- | 4A | Through Hole | -65°C ~ 150°C | 170 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220F-2L | Standard | 1.5 V @ 4 A | |
On Semiconductor
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- | 10A | Through Hole | -65°C ~ 150°C | 45 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220F-2L | Standard | 1.4 V @ 10 A | |
On Semiconductor
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- | 4A | Through Hole | -65°C ~ 150°C | 25 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220F-2L | Standard | 2.6 V @ 4 A | |
On Semiconductor
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- | 6A | Through Hole | -65°C ~ 150°C | 170 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220F-2L | Standard | 1.6 V @ 6 A | |
On Semiconductor
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170pF @ 4V, 1MHz | 16A | Through Hole | -65°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220-2 | Standard | 950 mV @ 8 A | |
On Semiconductor
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170pF @ 4V, 1MHz | 16A | Through Hole | -65°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220-2 | Standard | 950 mV @ 8 A | |
On Semiconductor
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170pF @ 4V, 1MHz | 16A | Through Hole | -65°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220-2 | Standard | 950 mV @ 8 A | |
NXP Semiconductors
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Harris Semiconductor
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- | 8A | Through Hole | -65°C ~ 175°C | 60 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Standard | 1.3 V @ 8 A | |
Infineon Technologies
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280pF @ 1V, 1MHz | 6A | Through Hole | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | PG-TO220-2-2 | SiC (Silicon Carbide) Schottky | 1.7 V @ 6 A | |
Infineon Technologies
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380pF @ 1V, 1MHz | 7.5A | Through Hole | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | PG-TO220-2 | SiC (Silicon Carbide) Schottky | 1.8 V @ 7.5 A | |
Harris Semiconductor
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- | 8A | Through Hole | -55°C ~ 175°C | 110 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Avalanche | 1.8 V @ 8 A | |
Harris Semiconductor
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100pF @ 4V, 1MHz | 6A | Through Hole | -65°C ~ 175°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | AL-4 | Standard | 975 mV @ 2 A | |
Harris Semiconductor
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15pF @ 4V, 1MHz | 1A | Through Hole | -65°C ~ 175°C | 2 µs | Standard Recovery >500ns, > 200mA (Io) | DO-204 | Standard | 1.2 V @ 1 A | |
On Semiconductor
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- | 8A | Through Hole | -65°C ~ 175°C | 70 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220-2 | Standard | 1.5 V @ 8 A | |
Harris Semiconductor
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- | 30A | Through Hole | -65°C ~ 175°C | 150 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Avalanche | 1.8 V @ 30 A | |
On Semiconductor
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On Semiconductor
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29pF @ 5V, 1MHz | 1A | Surface Mount | -55°C ~ 125°C | - | Fast Recovery =< 500ns, > 200mA (Io) | SOD-323 | Schottky | 500 mV @ 900 mA | |
Harris Semiconductor
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- | 30A | Through Hole | -55°C ~ 175°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Avalanche | 1 V @ 30 A | |
Motorola Semicondutor
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Nexperia USA Inc.
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On Semiconductor
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