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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Voltage - DC Reverse (Vr) (Max) |
The IDH08S120 is a Silicon Carbide (SiC) Schottky diode from Infineon Technologies. It is rated for a maximum repetitive reverse voltage of 1200 V and an average forward current of 7.5 A. The forward voltage is 1.8 V at a forward current of 7.5 A.
This diode features zero reverse recovery time (trr = 0 ns), which minimizes switching losses and supports high-frequency operation. The junction capacitance is 380 pF at 1 V and 1 MHz. It operates over a junction temperature range of -55°C to 175°C.
The device is available in a TO-220-2 through-hole package (supplier device package PG-TO220-2). This package is suitable for through-hole mounting in power electronic circuits.
The maximum DC reverse voltage is 1200V.
The average rectified forward current is 7.5A.
The forward voltage is 1.8V at a forward current of 7.5A.
The reverse recovery time is 0ns.
The device is available in a TO-220-2 through-hole package (PG-TO220-2).
The operating junction temperature ranges from -55°C to 175°C.
The device uses Silicon Carbide (SiC) Schottky technology.