FFPF04S60STU FFPF04S60STU is a 4A 600V fast recovery diode from On Semiconductor featuring 25ns reverse recovery time, 2.6V forward voltage, and avalanche energy rating of 10 mJ.
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FFPF04S60STU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FFPF04S60STU is a 4A 600V fast recovery diode from On Semiconductor featuring 25ns reverse recovery time, 2.6V forward voltage, and avalanche energy rating of 10 mJ.
Total Stock: 11,000 pcs

FFPF04S60STU Available from 1 distributor

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11000 pcs On Request 1 On Request On Request 13+ On Request On Request

FFPF04S60STU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Avalanche Energy
Current
Forward Voltage (Typical @ IF=4 A, TC=125 °C)
Forward Voltage (Typical/Maximum @ IF=4 A, TC=25 °C)
Mounting Type
Non-Repetitive Peak Surge Current
Operating Temperature
Peak Repetitive Reverse Voltage
Reverse Current (Maximum @ VR=600 V, TC=125 °C)
Reverse Current (Maximum @ VR=600 V, TC=25 °C)
Reverse Recovery Time (Typical @ IF=4 A, di/dt=200 A/µs, VR=390 V, TC=125 °C)
Reverse Recovery Time (Typical/Maximum @ IF=1 A, di/dt=100 A/µs, VR=30 V, TC=25 °C)
Reverse Recovery Time (trr)
Speed
Standard Package Quantity
Supplier Device Package
Technology
Thermal Resistance - Junction to Case
Voltage

FFPF04S60STU Description

Short technical summary and product information.

The FFPF04S60STU is a 4A, 600V STEALTH™ II fast recovery diode manufactured by On Semiconductor. It features ultra-fast reverse recovery time (25ns typical at 4A) with soft recovery characteristics, reducing ringing and electrical noise in power switching circuits. The diode has a low forward voltage of 2.6V max at 4A and 25°C (typical 2.2V), and a maximum peak repetitive reverse voltage of 600V.

 

Designed for use as a freewheeling or boost diode in continuous mode power factor correction (PFC) and switching mode power supplies, it also suits general purpose power switching circuits. The device is avalanche energy rated with a minimum of 10 mJ, ensuring ruggedness under surge conditions. Non-repetitive peak surge current is rated at 40A.

 

The component is housed in a through-hole TO-220-2 Full Pack (TO-220F-2L) package with a thermal resistance of 6.8°C/W junction-to-case. It operates over a wide temperature range from -65°C to 150°C. RoHS3 compliant per datasheet.

FFPF04S60STU Quick Information

Product Type: Fast Recovery Diode
Series: STEALTH™ II
Canonical Name: On Semiconductor FFPF04S60STU Fast Recovery Diode
Subcategory: Fast Recovery Diode

FFPF04S60STU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: Unaffected

FFPF04S60STU Features

  • Fast recovery with 25ns reverse recovery time.
  • Low forward voltage of 2.6V max at 4A.
  • Avalanche energy rated at 10 mJ minimum.
  • High surge current capability of40A.
  • Through-hole TO-220F-2L package.

FFPF04S60STU Applications

  • Ideal for boost diode in PFC circuits.
  • Used in switching mode power supplies.
  • Suitable for general power switching.
  • Freewheel diode in inverters.

FFPF04S60STU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the peak repetitive reverse voltage of FFPF04S60STU?

600V

What is the average rectified forward current?

4A

What is the forward voltage drop at rated current?

2.6V maximum at 4A and 25°C (typical 2.2V)

What is the reverse recovery time?

25 ns typical (IF=4A, specific conditions)

What package does this diode come in?

TO-220-2 Full Pack (TO-220F-2L) through-hole

What is the operating temperature range?

-65°C to 150°C

Is the device avalanche energy rated?

Yes, minimum 10 mJ

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