Diodes - Rectifiers - Arrays DistyParts

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Diodes - Rectifiers - Arrays facilitate the conversion of alternating current (AC) to direct current (DC) in electronic circuits. Key attributes include Current, Reverse Recovery Time (trr), and Operating Temperature. These components are essential for new product design and prototyping.

What are Diodes - Rectifiers - Arrays ?

Diodes - Rectifiers - Arrays are semiconductor devices that allow current to flow in one direction while blocking it in the opposite direction. They are commonly used in applications such as power supplies, signal processing, and electronic circuit protection. Important specifications for selection include Current, which determines the maximum load the diode can handle; Reverse Recovery Time (trr), which affects switching speed and efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Procurement teams should validate lifecycle status and consider alternate-source options to mitigate sourcing risks.

Part & Mfr

Total Stock

Pricing & RFQ

AEC Qualified

AEC-Q101

AEC-Q101 Qualified

Ambient Temperature Range

Automotive Grade

Automotive Qualification

Avalanche Energy

Avalanche Energy (EAS)

Average Forward Current

Average Forward Current (IF(AV))

Average Forward Current (IFAV)

Average Forward Current (per diode)

Average Rectified Current

Average Rectified Current (Io)

Average Rectified Current (Total)

Average Rectified Forward Current

Average Rectified Forward Current (Per Device)

Average Rectified Forward Current (Per Leg)

Average Rectified Output Current

Body Dimensions

Breakdown Voltage

Capacitance

Capacitance @ Vr, F

Capacitance @ Vr=0, F=1MHz

Capacitance Between Terminals

Capacitance, Cd (Max)

Case Material

Configuration

Conflict Minerals

Continuous Forward Current

Continuous Reverse Voltage

Coupling Thermal Resistance

Critical Rate of Rise of Voltage (dv/dt)cr

Current

Current - Average Rectified (Io)

Current - Average Rectified (Io) (Max)

Current - Average Rectified (Io) (per Diode)

Current - Non Repetitive Surge

Current - Non-Repetitive Surge (IFSM)

Current - Reverse Leakage @ Vr

Current - Surge

Current - Surge (Non-repetitive)

DC Blocking Voltage

DC Blocking Voltage (VR)

Diode Capacitance

Diode Capacitance (Cd)

Diode Capacitance (Max)

Diode Configuration

Diode Type

ESD Rating (HBM)

ESD Rating (Human Body Model)

ESD Rating - Machine Model

Flammability Rating

Forward Continuous Current

Forward Continuous Current (IFM)

Forward Current

Forward Current (Continuous)

Forward Current (DC)

Forward Current (IF)

Forward Current (Max)

Forward Power Dissipation

Forward Slope Resistance

Forward Surge Current

Forward Surge Current (IFSM)

Forward Voltage

Forward Voltage (Maximum @ 1 mA)

Forward Voltage (Maximum @ IF = 1 mA)

Forward Voltage (Maximum @ IF = 200 mA)

Forward Voltage (Maximum @ IF=15 mA)

Forward Voltage (Typical @ IF=1 mA)

Forward Voltage (Typical @ IF=10 mA)

Forward Voltage (Typical @ IF=50 mA)

Forward Voltage (Vf)

Forward Voltage (Vf) (Max) @ If

Forward Voltage (Vf) @ 100 mA

Forward Voltage (Vf) @ If

Forward Voltage @ 100 mA

Forward Voltage Drop

Green

Halogen Free

IR (Typical/Maximum @ @VR = rated VR, TJ=125 °C)

IR (Typical/Maximum @ VR = Rated VR, TJ = 25 °C)

Industrial Grade

Isolation Voltage

Isolation Voltage (VISOL)

Junction Capacitance

Junction Capacitance (Cj)

Junction Capacitance (Ct)

Junction Capacitance (Typical)

Junction Capacitance (per leg)

Junction Temperature

Junction Temperature (TJ)

Junction Temperature (Tjmax)

Junction and Storage Temperature

Junction and Storage Temperature Range

Lead Finish

Lead Spacing

Lead Style

MSL (Moisture Sensitivity Level)

Marking

Marking Code

Mass

Max Repetitive Reverse Voltage (VRRM)

Maximum Junction Temperature

Maximum Repetitive Peak Reverse Voltage

Maximum Repetitive Reverse Voltage

Maximum Repetitive Reverse Voltage (VRRM)

Maximum Reverse Voltage

Medical Grade

Military Grade

Mounting Torque

Mounting Type

Non-Repetitive Avalanche Energy (Per Leg)

Non-Repetitive Peak Forward Current (IFSM)

Non-Repetitive Peak Forward Surge Current

Non-Repetitive Peak Forward Surge Current (Maximum @ t = 1 ms)

Non-Repetitive Peak Forward Surge Current (Maximum @ t = 1 µs)

Non-Repetitive Peak Forward Surge Current (Maximum @ t = 1.0 µs)

Non-Repetitive Peak Forward Surge Current @ t=1.0µs

Non-Repetitive Peak Reverse Voltage

Non-Repetitive Surge Current

Non-Repetitive Surge Current (Per Leg)

Non-repetitive Peak Forward Current

Non-repetitive Peak Forward Surge Current (IFSM)

Non-repetitive Peak Surge Forward Current

Number of Pins

Operating Junction Temperature

Operating Junction Temperature Range

Operating Temperature

Operating Temperature (Minimum/Maximum)

Operating Temperature (TJ)

Operating Temperature - Junction

Operating Temperature - Junction (Max)

Operating Temperature Max

Operating Temperature Range

Package / Case

Package / Case Code

Package Description

Package Material

Package Type

Package Weight

Packaging Type

Packing Type

Peak Forward Current

Peak Forward Surge Current

Peak Non-Repetitive Surge Current

Peak Non-Repetitive Surge Current (Per Leg)

Peak Repetitive Reverse Voltage

Peak Repetitive Reverse Voltage (VRRM)

Polarity

Power Dissipation

Power Dissipation (Max)

Power Dissipation (PD)

Power Dissipation (Ptot)

RMS Forward Current

RMS Forward Current (IFRMS)

RMS Reverse Voltage

RMS Reverse Voltage (VR(RMS))

Repetitive Avalanche Current

Repetitive Avalanche Current (Per Leg)

Repetitive Peak Forward Current

Repetitive Peak Forward Current (IFRM)

Repetitive Peak Reverse Current

Repetitive Peak Reverse Voltage

Repetitive Peak Reverse Voltage (VRRM)

Repetitive Reverse Voltage

Reverse Breakdown Voltage

Reverse Breakdown Voltage (Min)

Reverse Current

Reverse Current (IR)

Reverse Current (Leakage)

Reverse Current (Max @ 25 V)

Reverse Current (Maximum @ VR = 100 V)

Reverse Current (Maximum @ VR = 75 V)

Reverse Current @ 80 V

Reverse Leakage

Reverse Leakage Current

Reverse Leakage Current (IR)

Reverse Leakage Current (Max @ 25 V)

Reverse Leakage Current (Maximum @ VR = 100 V)

Reverse Recovery Time

Reverse Recovery Time (Max)

Reverse Recovery Time (trr)

Reverse Voltage

Reverse Voltage (Max)

Reverse Voltage (Maximum)

Reverse Voltage (VR)

Reverse Voltage (Vr) (Max)

Reverse Voltage (Vrrm)

SVHC Present

Solderability

Speed

Speed / Recovery Time

Standard Package Qty

Standard Package Quantity

Storage Temperature

Storage Temperature (Tstg)

Storage Temperature Range

Supplier Device Package

Supplier Package

Surge Forward Current

Switching Speed

Tape & Reel

Technology

Terminal Connection Torque

Terminal Connection Torque (M4)

Terminal Finish

Terminal Torque

Terminals

Terminals Finish

Termination Finish

Termination Style

Thermal Resistance

Thermal Resistance (Junction to Case) (Typical @ DC operation)

Thermal Resistance (Junction to Soldering Point)

Thermal Resistance (RthJC)

Thermal Resistance (junction to solder point)

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Case (Typical)

Thermal Resistance Case to Heat Sink

Thermal Resistance Junction to Case (Per Leg)

Thermal Resistance Junction to Case (Per Package)

Thermal Resistance Junction-to-Ambient

Thermal Resistance from Junction to Ambient

Thermal Resistance, Case to Heatsink

Thermal Resistance, Junction to Ambient Air

Thermal Resistance, Junction to Case (RthJC)

Threshold Voltage

Total Capacitance

Total Power Dissipation

Total Power Dissipation (Ptot)

UL Flammability

Voltage

Voltage - DC Blocking (Max)

Voltage - DC Reverse (Vr)

Voltage - DC Reverse (Vr) (Max)

Voltage - Forward (Vf)

Voltage - Forward (Vf) (Max) @ If

Voltage - Forward (Vf) @ If

Voltage - Reverse (Max)

Voltage - Reverse (Vr) (Max)

Voltage - Reverse (Vrrm)

Voltage Rate of Change

Weight

Weight (Approximate)

Working Peak Reverse Voltage

average_rectified_current (Maximum @ Double Diode)

dv/dt

forward_continuous_current (Maximum @ Double Diode)

forward_continuous_current (Maximum @ Single Diode)

forward_current (Maximum @ Single Diode)

forward_voltage (Maximum @ IF = 0.1 mA)

forward_voltage (Maximum @ IF = 1 mA, Tj = 25 °C)

forward_voltage (Maximum @ IF = 1 mA; Tamb = 25 °C)

forward_voltage (Maximum @ IF = 10 mA)

forward_voltage (Maximum @ IF = 10 mA, Tj = 25 °C)

forward_voltage (Maximum @ IF = 10 mA; Tamb = 25 °C)

forward_voltage (Maximum @ IF = 100 mA)

forward_voltage (Maximum @ IF = 150 mA)

forward_voltage (Maximum @ IF = 150 mA, Tj = 25 °C)

forward_voltage (Maximum @ IF = 30 mA)

forward_voltage (Maximum @ IF = 50 mA)

forward_voltage (Maximum @ IF = 50 mA, Tj = 25 °C)

forward_voltage (Maximum @ IF=1 mA, Tamb=25 °C, pulsed)

forward_voltage (Maximum @ IF=10 mA, Tamb=25 °C, pulsed)

forward_voltage (Maximum @ If = 1.0 mA)

forward_voltage (Maximum @ TA = +25 °C)

forward_voltage (Typical @ IF = 30 A, Tj = 25 °C)

forward_voltage (Typical @ IF = 30 mA)

forward_voltage (Typical @ IF = 60 A, Tj = 25 °C)

forward_voltage (Typical @ IF=100 mA)

forward_voltage (Typical @ If=60 A, Tj=125 °C)

forward_voltage (Typical/Maximum @ IF = 0.1 mA)

forward_voltage (Typical/Maximum @ IF = 100 mA)

forward_voltage (Typical/Maximum @ IF = 30 mA)

forward_voltage (Typical/Maximum @ IF=1 mA)

forward_voltage (Typical/Maximum @ IF=10 mA)

i²t Rating

junction_temperature_range

non_repetitive_peak_forward_surge_current (Maximum @ t = 100 µs)

non_repetitive_peak_forward_surge_current (Maximum @ tp ≤ 1 ms)

power_dissipation (Maximum @ Alumina Substrate, TA = 25 °C)

power_dissipation (Maximum @ FR -5 Board, TA = 25 °C)

power_dissipation (Maximum @ Note 6)

reverse_current (Maximum @ TA = +25 °C)

reverse_current (Maximum @ Vr = 70 V)

reverse_current (Maximum @ Vr = 70 V, TA = 25 °C)

reverse_current (Typical @ VR=VRRM, TVJ=25 °C)

reverse_current (Typical/Maximum @ VR=75 V; Tj=150 °C)

reverse_leakage_current (Maximum @ Tj = 100 °C, VR = VRRM)

reverse_leakage_current (Maximum @ Tj = 25 °C, VR = VRRM)

reverse_leakage_current (Maximum @ VR = 25 V, TJ = 150 °C)

reverse_leakage_current (Maximum @ VR = 70 V, TJ = 150 °C)

reverse_leakage_current (Maximum @ VR=70 V)

reverse_leakage_current (Maximum @ VR=75 V, Tj=150 °C)

reverse_leakage_current (Maximum @ VR=75 V, Tj=25 °C)

reverse_leakage_current (Maximum @ VR=VRRM, TVJ=25 °C)

reverse_leakage_current (Typical/Maximum @ VR = 25 V)

reverse_recovery_time (Unspecified condition)

storage_temperature (Minimum/Maximum)

thermal_resistance_junction_to_ambient (Maximum @ FR -4 minimum pad)

thermal_resistance_junction_to_ambient (Maximum @ FR -5 Board)

total_device_dissipation (Maximum @ FR -5 Board, TA = 25 °C)

ISL9K1560G3

On Semiconductor

1,574

Price on request

1,574

100 A @ 600 V

1 Pair Common Cathode

Through Hole

-55°C ~ 175°C

40 ns

Fast Recovery =< 500ns, > 200mA (Io)

TO-247-3

Standard

2.2 V @ 15 A

DSSK20-0045B

IXYS

The DSSK20-0045B is a Schottky diode array manufactured by IXYS, featuring a 1 pair common cathode configuration. It is designed for applications requiring fast switching and low forward voltage drop. Key electrical specifications include a maximum forward voltage of 510mV at 10A, a maximum reverse leakage current of 5mA at 45V, and fast recovery speed (≤500ns, >200mA). The device operates over a temperature range of -55°C to 150°C. The diode array is housed in a TO-220-3 through-hole package, suitable for PCB mounting. The common cathode configuration simplifies layout in rectifier and freewheeling circuits.

1,574

Price on request

1,574

5 mA @ 45 V

1 Pair Common Cathode

Through Hole

-55°C ~ 150°C

TO-220-3

Fast Recovery =< 500ns, > 200mA (Io)

TO-220-3

Schottky

510 mV @ 10 A

VS-MUR2020CT-M3

Vishay Dale

1,567

Across 2 distributors

Distributor	Stock	MOQ	Country
Braun Electronic Components	567	-	-
Xingangxin	1,000	-	-

Price on request

1,567

Distributor	Stock	MOQ	Country
Braun Electronic Components	567	-	-
Xingangxin	1,000	-	-

15 A @ 200 V

1 Pair Common Cathode

Through Hole

-65°C ~ 175°C

35 ns

Fast Recovery =< 500ns, > 200mA (Io)

TO-220-3

Standard

1.15 V @ 16 A

MBRF20200CTR

SMC Diode Solutions

1,551

From Smaxon Electronics

Price on request

1,551

1 mA @ 200 V

1 Pair Common Anode

Through Hole

-55°C ~ 175°C

Fast Recovery =< 500ns, > 200mA (Io)

ITO-220AB

Schottky

950 mV @ 20 A

MBR30100CT-E1

Diodes Incorporated

1,550

From Smaxon Electronics

Price on request

1,550

100 A @ 100 V

1 Pair Common Cathode

Through Hole

-55°C ~ 150°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-220-3

Schottky

850 mV @ 15 A

RB530XNTR

ROHM Semiconductor

1,544

From Smaxon Electronics

Price on request

1,544

1 A @ 10 V

3 Independent

Surface Mount

125°C (Max)

Small Signal =< 200mA (Io), Any Speed

UMD6

Schottky

530 mV @ 100 mA

BAS40V-7

Diodes Incorporated

The BAS40V-7 is a dual Schottky barrier diode array from Diodes Incorporated, featuring two independent diodes with a maximum reverse voltage of 40V and an average rectified current of 200mA per diode. It exhibits a low forward voltage drop of 1V at 40mA and a fast reverse recovery time of 5 ns, making it suitable for high-speed switching applications. The junction is protected by a PN junction guard ring for transient and ESD protection. The device is housed in a compact SOT-563 surface-mount package weighing just 0.003 grams. It supports an operating temperature range of -55°C to 125°C with a power dissipation of 150 mW and a thermal resistance of 833°C/W. The package is made of molded plastic with a UL 94V-0 flammability rating and has a moisture sensitivity level of 1 per J-STD-020. The BAS40V-7 is fully RoHS compliant, lead-free, and halogen- and antimony-free ("Green" device). Terminals are matte tin annealed over a copper leadframe, solderable per MIL-STD-202 Method 208. It is supplied in tape and reel packaging with 3,000 units per reel.

1,533

Across 2 distributors

Distributor	Stock	MOQ	Country
Braun Electronic Components	470	-	-
Bristol Electronics	1,063	-	-

Price on request

1,533

Distributor	Stock	MOQ	Country
Braun Electronic Components	470	-	-
Bristol Electronics	1,063	-	-

4 pF

200 nA @ 30 V

200 mA

200 nA @ 30 V

2 Independent

Yes

Surface Mount

-55°C ~ 125°C

SOT-563

150 mW

5 ns

Small Signal =< 200mA (Io), Any Speed

3000

-65°C ~ 150°C

SOT-563

Yes

Schottky

833 °C/W

1 V @ 40 mA

40 V

1 V @ 40 mA

0.003 g

VS-60CPU02-N3

Vishay Dale

1,520

From Optech Co.,Limited

Price on request

1,520

50 A @ 200 V

1 Pair Common Cathode

Through Hole

-65°C ~ 175°C

30 ns

Fast Recovery =< 500ns, > 200mA (Io)

TO-247AC

Standard

1.1 V @ 30 A

VS-40CPQ045-N3

Vishay Dale

1,520

From Optech Co.,Limited

Price on request

1,520

4 mA @ 45 V

1 Pair Common Cathode

Through Hole

-55°C ~ 150°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-247AC

Schottky

590 mV @ 40 A

BAT54CTA

Diodes Incorporated

The BAT54CTA is a surface mount Schottky barrier diode array manufactured by Diodes Incorporated. It contains two Schottky diodes in a common cathode configuration, housed in a compact SOT-23-3 package. The device is rated for a maximum reverse voltage of 30V and an average forward current of 200mA. Key electrical characteristics include a maximum forward voltage of 0.8V at 100mA forward current and a maximum reverse current of 2µA. The diode array offers a fast reverse recovery time of 5ns, making it suitable for high-speed switching applications. A PN junction guard ring provides transient and ESD protection. The BAT54CTA is supplied in tape and reel packaging with 3000 pieces per reel. It is RoHS3 compliant, lead-free, and halogen-free. The terminals have a matte tin finish, and the device meets MSL Level 1 per J-STD-020. The operating temperature range extends up to 125°C.

1,515

Across 2 distributors

Distributor	Stock	MOQ	Country
Braun Electronic Components	10	-	-
Bristol Electronics	1,505	-	-

Price on request

1,515

Distributor	Stock	MOQ	Country
Braun Electronic Components	10	-	-
Bristol Electronics	1,505	-	-

4 A @ 25 V

1 Pair Common Cathode

200 mA

Yes

Level 1 - Unlimited

Surface Mount

4 A

125°C (Max)

125 °C

SOT-23-3

Tape & Reel

2 µA

5 ns

30 V

Not Present

Small Signal =< 200mA (Io), Any Speed

3000 pcs

-65°C ~ 150°C

SOT-23-3

Yes

Schottky

Matte Tin

1 V @ 100 mA

SDM03MT40A-7-F

Diodes Incorporated

1,505

From Smaxon Electronics

Price on request

1,505

1 A @ 10 V

3 Independent

Surface Mount

-40°C ~ 125°C

Small Signal =< 200mA (Io), Any Speed

SOT-26

Schottky

370 mV @ 1 mA

APT2X61D100J

Microchip Technology

The APT2X61D100J is a fast recovery diode module from Microchip Technology, designed for high-voltage rectification applications. It contains two independent standard recovery diodes, each rated for a DC reverse voltage of 1000V and an average rectified current of 55A. The forward voltage is 2.5V at 60A, and the reverse recovery time is 280ns, making it suitable for fast switching circuits. This module uses chassis mount installation and is housed in a SOT-227-4 miniBLOC package, also known as ISOTOP. The package provides robust thermal and mechanical performance for industrial power systems.

1,500

Price on request

1,500

250 A @ 1000 V

55 A @ 1000 V

2 Independent

2.5 V @ 60 A

Chassis Mount

SOT-227-4, miniBLOC

280 ns

Fast Recovery =< 500ns, > 200mA (Io)

ISOTOP®

Standard

2.5 V @ 60 A

1000 V

BAW56LT3G

On Semiconductor

1,500

Price on request

1,500

2.5 A @ 70 V

1 Pair Common Anode

Surface Mount

-55°C ~ 150°C

6 ns

Small Signal =< 200mA (Io), Any Speed

SOT-23-3 (TO-236)

Standard

1.25 V @ 150 mA

BAV199LT1

On Semiconductor

1,500

From Bristol Electronics

Price on request

1,500

5 nA @ 70 V

1 Pair Series Connection

Surface Mount

-65°C ~ 150°C

3 碌s

Standard Recovery >500ns, > 200mA (Io)

SOT-23-3 (TO-236)

Standard

1.25 V @ 150 mA

MURB1620CTG

On Semiconductor

1,499

Across 2 distributors

Distributor	Stock	MOQ	Country
Partservice	75	-	-
Xingangxin	1,424	-	-

Price on request

1,499

Distributor	Stock	MOQ	Country
Partservice	75	-	-
Xingangxin	1,424	-	-

5 A @ 200 V

1 Pair Common Cathode

Surface Mount

-65°C ~ 175°C

35 ns

Fast Recovery =< 500ns, > 200mA (Io)

D虏PAK

Standard

975 mV @ 8 A

MBR2060CT-E3/45

Vishay Dale

1,498

From Smaxon Electronics

Price on request

1,498

150 A @ 60 V

1 Pair Common Cathode

Through Hole

-65°C ~ 150°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-220-3

Schottky

800 mV @ 10 A

10CTQ150S

Vishay Dale

1,490

Across 2 distributors

Distributor	Stock	MOQ	Country
Hybrid Electronics	1,375	-	-
Husky International Electronic	115	-	-

Price on request

1,490

Distributor	Stock	MOQ	Country
Hybrid Electronics	1,375	-	-
Husky International Electronic	115	-	-

50 A @ 150 V

1 Pair Common Cathode

Surface Mount

-55°C ~ 175°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-263AB (D虏PAK)

Schottky

930 mV @ 5 A

VS-MUR3020WTPBF

Vishay Dale

1,487

Across 3 distributors

Distributor	Stock	MOQ	Country
Rayichip	581	-	-
Husky International Electronic	385	-	-
Smaxon Electronics	521	-	-

Price on request

1,487

Distributor	Stock	MOQ	Country
Rayichip	581	-	-
Husky International Electronic	385	-	-
Smaxon Electronics	521	-	-

10 A @ 200 V

1 Pair Common Cathode

Through Hole

-65°C ~ 175°C

35 ns

Fast Recovery =< 500ns, > 200mA (Io)

TO-247AC

Standard

1.05 V @ 15 A

V40100C-E3/4W

Vishay Dale

1,486

From Optech Co.,Limited

Price on request

1,486

1 mA @ 100 V

1 Pair Common Cathode

Through Hole

-40°C ~ 150°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-220-3

Schottky

730 mV @ 20 A

VS-20CTH03-M3

Vishay Dale

1,470

From Optech Co.,Limited

Price on request

1,470

20 A @ 300 V

1 Pair Common Cathode

Through Hole

-65°C ~ 175°C

35 ns

Fast Recovery =< 500ns, > 200mA (Io)

TO-220-3

Standard

1.25 V @ 10 A

SBR10150CTFP

Diodes Incorporated

1,445

From Smaxon Electronics

Price on request

1,445

250 A @ 150 V

1 Pair Common Cathode

Through Hole

-65°C ~ 150°C

Standard Recovery >500ns, > 200mA (Io)

TO-220F-3

Super Barrier

920 mV @ 5 A

DSEC30-03A

IXYS

1,443

From Smaxon Electronics

Price on request

1,443

100 A @ 300 V

1 Pair Common Cathode

Through Hole

-55°C ~ 175°C

30 ns

Fast Recovery =< 500ns, > 200mA (Io)

TO-247AD

Standard

1.67 V @ 15 A

SBM3060VCT_T0_00001

PANJIT

1,437

From Smaxon Electronics

Price on request

1,437

220 A @ 60 V

1 Pair Common Cathode

Through Hole

-55°C ~ 150°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-220AB

Schottky

590 mV @ 15 A

FERD40L60CG-TR

STMicroelectronics

1,431

From PROSOFT ELECTRONICS

Price on request

1,431

1.1 mA @ 60 V

1 Pair Common Cathode

Surface Mount

150°C (Max)

Fast Recovery =< 500ns, > 200mA (Io)

D虏PAK

FERD (Field Effect Rectifier Diode)

545 mV @ 20 A

STPSC40065CW

STMicroelectronics

1,431

Price on request

1,431

300 A @ 600 V

1 Pair Common Cathode

Through Hole

-40°C ~ 175°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-247-3

SiC (Silicon Carbide) Schottky

1.7 V @ 20 A

FEP16JT-E3/45

Vishay Dale

1,420

From Optech Co.,Limited

Price on request

1,420

10 A @ 600 V

1 Pair Common Cathode

Through Hole

-55°C ~ 150°C

50 ns

Fast Recovery =< 500ns, > 200mA (Io)

TO-220-3

Standard

1.5 V @ 8 A

NTST60100CTG

On Semiconductor

1,420

Price on request

1,420

1 A @ 8100 V

1 Pair Common Cathode

Through Hole

-40°C ~ 150°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-220

Schottky

840 mV @ 30 A

VS-43CTQ100-1-M3

Vishay Dale

1,419

Across 2 distributors

Distributor	Stock	MOQ	Country
ADI/AAR OEM Supply	139	-	-
PROSOFT ELECTRONICS	1,280	-	-

Price on request

1,419

Distributor	Stock	MOQ	Country
ADI/AAR OEM Supply	139	-	-
PROSOFT ELECTRONICS	1,280	-	-

1 mA @ 100 V

1 Pair Common Cathode

Through Hole

-55°C ~ 175°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-262-3

Schottky

810 mV @ 20 A

DSS2X160-01A

IXYS

The IXYS DSS2X160-01A is a high-current Schottky rectifier module designed for efficient power conversion. It features a 1 pair common cathode diode configuration, providing a reverse voltage rating of 100V and an average rectified current of 160A. The forward voltage is typically 980 mV at 160A, and the reverse leakage current is 4 mA at 100V. This module is classified as fast recovery with a recovery time of 500 ns or less. The device is housed in a SOT-227-4 (miniBLOC) package with a SOT-227B supplier device package designation. It is designed for chassis mount installation, making it suitable for high-power applications where heat dissipation is critical. The Schottky technology ensures low forward voltage drop and fast switching, which is ideal for high-frequency rectification and power supply designs. This module is commonly used in power supplies, DC-DC converters, and motor drive circuits where high current and low loss are required. The common cathode configuration simplifies PCB layout for center-tapped transformer designs.

1,383

Price on request

1,383

4 mA @ 100 V

160 A

1 Pair Common Cathode

980 mV @ 160 A

Chassis Mount

SOT-227-4, miniBLOC

4 mA @ 100 V

Fast Recovery =< 500ns, > 200mA (Io)

SOT-227B

Schottky

980 mV @ 160 A

100 V

STPS40L40CW

STMicroelectronics

1,380

From Hybrid Electronics

Price on request

1,380

800 A @ 40 V

1 Pair Common Cathode

Through Hole

150°C (Max)

Fast Recovery =< 500ns, > 200mA (Io)

TO-247-3

Schottky

530 mV @ 20 A

VS-30CPH03-N3

Vishay Dale

1,370

Across 2 distributors

Distributor	Stock	MOQ	Country
Chanetech	650	-	-
Xingangxin	720	-	-

Price on request

1,370

Distributor	Stock	MOQ	Country
Chanetech	650	-	-
Xingangxin	720	-	-

40 A @ 300 V

1 Pair Common Cathode

Through Hole

175°C (Max)

Fast Recovery =< 500ns, > 200mA (Io)

TO-247AC

Schottky

1.25 V @ 15 A

SNRVBD660CTT4G

On Semiconductor

1,358

Across 2 distributors

Distributor	Stock	MOQ	Country
Bristol Electronics	170	-	-
Rayichip	1,188	-	-

Price on request

1,358

Distributor	Stock	MOQ	Country
Bristol Electronics	170	-	-
Rayichip	1,188	-	-

100 A @ 60 V

1 Pair Common Cathode

Surface Mount

-65°C ~ 175°C

Fast Recovery =< 500ns, > 200mA (Io)

DPAK

Schottky

700 mV @ 3 A

C3D20060D

WOLFSPEED

The C3D20060D is a 600V, 20A silicon carbide (SiC) Schottky diode array from Wolfspeed, configured as a common cathode pair. It utilizes SiC Schottky technology to achieve zero reverse recovery current and forward recovery voltage, enabling high-frequency operation with minimal switching losses. The diode offers a typical forward voltage of 1.5V at 10A and 25°C, with a maximum of 1.8V. It can handle continuous forward current up to 27.5A per leg (55A per device) at 25°C case temperature, and up to 10A per leg (20A per device) at 149°C. The device is rated for repetitive peak reverse voltage of 600V and has a non-repetitive surge current capability of 90A per leg. This diode array is designed for applications such as boost diodes in PFC or DC/DC stages, freewheeling diodes in inverter stages, switch-mode power supplies, solar inverters, and AC/DC converters. The SiC technology provides temperature-independent switching behavior and allows paralleling of devices without thermal runaway concerns. The operating temperature range is -55°C to 175°C. The C3D20060D is packaged in a TO-247-3 through-hole package, supplied in tubes of 30 units with a standard packing quantity of 450. It is RoHS3 compliant, REACH unaffected, halogen-free, and lead-free. The device is qualified for industrial applications.

1,357

Price on request

1,357

50 A @ 600 V

600 V

1 Pair Common Cathode

Yes

Through Hole

-55°C ~ 175°C

TO-247-3

600 V

0 ns

No Recovery Time > 500mA (Io)

TO-247-3

SiC (Silicon Carbide) Schottky

1.8 V @ 10 A

MA4X71400L

Panasonic Electronic Components

1,355

From Bristol Electronics

Price on request

1,355

1 A @ 30 V

2 Independent

Surface Mount

125°C (Max)

1 ns

Small Signal =< 200mA (Io), Any Speed

Mini4-G1

Schottky

1 V @ 30 mA

SBG1045CT-T-F

Diodes Incorporated

1,345

From Husky International Electronic

Price on request

1,345

1 mA @ 45 V

1 Pair Common Cathode

Surface Mount

-65°C ~ 125°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-263AB (D虏PAK)

Schottky

550 mV @ 5 A

10CTQ150-1

Vishay Dale

1,343

From Smaxon Electronics

Price on request

1,343

50 A @ 150 V

1 Pair Common Cathode

Through Hole

-55°C ~ 175°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-262-3

Schottky

930 mV @ 5 A

MURD610CTT4

On Semiconductor

1,342

Price on request

1,342

5 A @ 100 V

1 Pair Common Cathode

Surface Mount

35 ns

Fast Recovery =< 500ns, > 200mA (Io)

DPAK

Standard

1 V @ 3 A

MBRF2545CTG

On Semiconductor

1,327

Across 2 distributors

Distributor	Stock	MOQ	Country
Flip Electronics	1,250	-	-
MW.FEP S.p.A.	77	-	-

Price on request

1,327

Distributor	Stock	MOQ	Country
Flip Electronics	1,250	-	-
MW.FEP S.p.A.	77	-	-

200 A @ 45 V

1 Pair Common Cathode

Through Hole

-65°C ~ 175°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-220FP

Schottky

700 mV @ 12.5 A

MBR2045CTP

Diodes Incorporated

1,316

From Smaxon Electronics

Price on request

1,316

100 A @ 45 V

1 Pair Common Cathode

Through Hole

-55°C ~ 150°C

Fast Recovery =< 500ns, > 200mA (Io)

ITO-220S

Schottky

650 mV @ 10 A

FMEN-210A

Sanken

1,313

From Smaxon Electronics

Price on request

1,313

100 A @ 100 V

1 Pair Common Cathode

Through Hole

-40°C ~ 150°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-220F

Schottky

850 mV @ 5 A

MBRF2045CTG

On Semiconductor

1,290

Price on request

1,290

100 A @ 45 V

1 Pair Common Cathode

Through Hole

-65°C ~ 175°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-220FP

Schottky

570 mV @ 10 A

BYV32-200G

On Semiconductor

The BYV32-200G is a dual common cathode ultrafast rectifier from On Semiconductor, designed for switch-mode power supplies and power management applications. It features a 200V DC blocking voltage and 8A average rectified forward current per diode leg, with a total device current rating of 16A. The device offers a low forward voltage of 1.15V at 20A and a fast reverse recovery time of 35ns, making it suitable for high-frequency rectification. It can handle nonrepetitive peak surge currents up to 100A. The operating junction temperature range is -65°C to 175°C, and it has a thermal resistance of 3.0°C/W junction-to-case. The BYV32-200G is housed in a through-hole TO-220-3 package and is RoHS compliant and Pb-Free. It is ideal for output rectification in power supplies, power management, and instrumentation.

1,289

Across 4 distributors

Distributor	Stock	MOQ	Country
Seba Components	50	-	-
MW.FEP S.p.A.	16	-	-
Partservice	3	-	-
Optech Co.,Limited	1,220	-	-

Price on request

1,289

Distributor	Stock	MOQ	Country
Seba Components	50	-	-
MW.FEP S.p.A.	16	-	-
Partservice	3	-	-
Optech Co.,Limited	1,220	-	-

50 A @ 200 V

8 A

50 µA @ 200 V

1 Pair Common Cathode

Through Hole

-65°C ~ 175°C

TO-220-3

35 ns

Fast Recovery =< 500ns, > 200mA (Io)

-65.0°C ~ 175.0°C

TO-220

Standard

3.0 °C/W

1.15 V @ 20 A

200 V

1.15 V @ 20 A

BAT54-05E6327

Infineon Technologies

1,266

From Smaxon Electronics

Price on request

1,266

2 A @ 25 V

1 Pair Common Cathode

Surface Mount

150°C

5 ns

Small Signal =< 200mA (Io), Any Speed

PG-SOT23-3-3

Schottky

800 mV @ 100 mA

V30202C-M3/4W

Vishay Dale

1,263

Across 3 distributors

Distributor	Stock	MOQ	Country
Braun Electronic Components	497	-	-
MW.FEP S.p.A.	747	-	-
Bristol Electronics	19	-	-

Price on request

1,263

Distributor	Stock	MOQ	Country
Braun Electronic Components	497	-	-
MW.FEP S.p.A.	747	-	-
Bristol Electronics	19	-	-

250 A @ 200 V

1 Pair Common Cathode

Through Hole

-40°C ~ 175°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-220-3

Schottky

880 mV @ 15 A

BAS4006WE6327

Infineon Technologies

1,260

From Smaxon Electronics

Price on request

1,260

1 A @ 30 V

1 Pair Common Anode

Surface Mount

150°C (Max)

100 ps

Small Signal =< 200mA (Io), Any Speed

SOT-323

Schottky

1 V @ 40 mA

DSEI2X61-06C

IXYS

The IXYS DSEI2X61-06C is a fast recovery epitaxial diode (FRED) module containing two independent diodes in a single SOT-227B miniBLOC package. Each diode is rated for a maximum repetitive reverse voltage (VRRM) of 600V and an average forward current (IFAVM) of 60A at a case temperature of 70°C with a rectangular duty cycle of 0.5. The forward voltage is typically 1.5V at 60A and 150°C junction temperature, with a maximum of 1.8V at 25°C. The module features a fast reverse recovery time (trr) of 50ns maximum (35ns typical) when tested at 1A forward current with a -di/dt of 200A/µs. The peak reverse recovery current (IRM) is 21A maximum under specified conditions. The planar passivated chips provide soft recovery behavior and extremely low switching losses. The SOT-227B package offers 2500V RMS isolation voltage and is designed for chassis mounting with a mounting torque of 1.5 Nm. The module weighs 30g and operates over a junction temperature range of -40°C to 150°C. It is suitable for applications such as antiparallel diodes for high-frequency switching devices, snubber circuits, and freewheeling diodes in converters and motor control.

1,256

Across 2 distributors

Distributor	Stock	MOQ	Country
ACK ELEKTRONIK	256	-	-
Xingangxin	1,000	-	-

Price on request

1,256

Distributor	Stock	MOQ	Country
ACK ELEKTRONIK	256	-	-
Xingangxin	1,000	-	-

200 A @ 600 V

2 Independent

2500 V~

1.5 Nm

Chassis Mount

-40 °C ~ 150 °C

SOT-227-4, miniBLOC

600 V

50 ns

Not Present

Fast Recovery =< 500ns, > 200mA (Io)

-40°C ~ 150°C

SOT-227B

Standard

1.5 Nm (M4)

1.8 V @ 60 A

30 g

NTSJ3080CTG

On Semiconductor

1,250

From Smaxon Electronics

Price on request

1,250

700 A @ 80 V

1 Pair Common Cathode

Through Hole

-40°C ~ 150°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-220-2 Full Pack

Schottky

850 mV @ 15 A

STPS61L60CW

STMicroelectronics

1,230

From Optech Co.,Limited

Price on request

1,230

800 A @ 60 V

1 Pair Common Cathode

Through Hole

150°C (Max)

Fast Recovery =< 500ns, > 200mA (Io)

TO-247-3

Schottky

660 mV @ 30 A

M1MA151WAT1

On Semiconductor

1,230

From Bristol Electronics

Price on request

1,230

100mA (DC)

1 Pair Common Anode

Surface Mount

150°C (Max)

10 ns

Small Signal =< 200mA (Io), Any Speed

SC-59

Standard

40 V

MBR40H60CT-E3/45

Vishay Dale

1,217

From Smaxon Electronics

Price on request

1,217

100 A @ 60 V

1 Pair Common Cathode

Through Hole

-65°C ~ 175°C

Fast Recovery =< 500ns, > 200mA (Io)

TO-220-3

Schottky

680 mV @ 20 A

Showing 1051-1100 of 15,170 products

About Diodes - Rectifiers - Arrays

Diodes - Rectifiers - Arrays are essential components in electronic circuits, providing critical functions such as rectification and signal modulation. This category encompasses a variety of diode types including Avalanche, Schottky, and Silicon Carbide (SiC) Schottky diodes, each tailored for specific applications and performance requirements.

When sourcing diodes, it is important to consider key attributes such as current rating, diode configuration, mounting type, operating temperature, and reverse recovery time (trr). These specifications play a vital role in ensuring compatibility with your existing designs and applications.

Applications for Diodes - Rectifiers - Arrays include new product design and prototyping, production electronics assembly, maintenance and field replacement, as well as engineering evaluation and qualification. Understanding the operational context of these components can significantly enhance your design efficiency and reliability.

Before submitting a Request for Quotation (RFQ), prioritize comparing critical specifications to validate lifecycle status and explore alternate-source options. This approach minimizes sourcing risks and ensures that the selected components meet your technical requirements.

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Diodes - Rectifiers - Arrays

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Diodes - Rectifiers - Arrays

What are Diodes - Rectifiers - Arrays ?

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