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28,578 pcs
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28578 pcs | On Request | 1 | On Request | On Request | 1129+ | On Request | On Request |
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The Toshiba TPC8406-H is a Silicon P/N-Channel MOS Type Field Effect Transistor utilizing U-MOSIII technology. It is designed for applications requiring high efficiency and high speed switching, such as DC/DC converters, notebook PCs, portable equipment, and CCFL inverters.
Key electrical characteristics include a low drain-source ON-resistance, with a typical value of 24 mΩ for the P-channel and 22 mΩ for the N-channel. The device also features a small gate charge, 9.7 nC for P-channel and 3.5 nC for N-channel, contributing to its high-speed switching performance. The forward transfer admittance is high, at 13 S for P-channel and 14 S for N-channel.
Absolute maximum ratings include a drain-source voltage of -40V for P-channel and 40V for N-channel. The device operates within a channel temperature range of 150°C and a storage temperature range of -55 to 150°C. The TPC8406-H comes in a small and thin package, contributing to a small footprint in circuit designs.
This MOSFET is suitable for various electronic designs where efficient power conversion and fast switching are critical. Its dual P/N-channel configuration offers flexibility in circuit design.
The typical drain-source ON-resistance for the P-channel is 24 mΩ.
The typical drain-source ON-resistance for the N-channel is 22 mΩ.
The typical gate charge for the P-channel is 9.7 nC.
The typical gate charge for the N-channel is 3.5 nC.
The maximum drain-source voltage is -40 V for the P-channel and 40 V for the N-channel.
The channel temperature can reach up to 150 °C, and the storage temperature range is -55 to 150 °C.