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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | 1043+(PB) | On Request | On Request |
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The TRINNO TMPF12N60G is an N-channel MOSFET belonging to the discrete semiconductor products category. It is designed with a high drain-source voltage rating of 660V at Tjmax and can handle a continuous drain current of 12A. The on-resistance is specified at a maximum of 0.65W at VGS=10V.
This MOSFET features low gate charge, 100% avalanche tested, and improved dv/dt capability, making it suitable for various power electronics applications. It comes in a TO-220F package, typically used for through-hole mounting.
Key electrical characteristics include a maximum drain-source voltage of 660V and a maximum drain current of 12A. The on-resistance is 0.65W at a gate-source voltage of 10V. The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
The maximum drain-source voltage (VDSS) for the TMPF12N60G is 660V at Tjmax.
The continuous drain current (ID) for the TMPF12N60G is 12A.
The maximum on-resistance (RDS(on)) for the TMPF12N60G is 0.65W at a gate-source voltage of 10V.
The TMPF12N60G is supplied in a TO-220F package.
The TMPF12N60G is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the TMPF12N60G is 1 Unlimited.