| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,750 pcs
|
10750 pcs | On Request | 1 | On Request | On Request | 1815+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Package / Case | |
| SVHC Present |
The Toshiba TK8A60W,S4VX(M is a high-performance N-Channel MOSFET suitable for various electronic applications. It offers a breakdown voltage of 600V and a continuous drain current of 8A at 25°C.
This MOSFET is housed in a TO-220F package, which is commonly used for power applications due to its thermal performance and ease of mounting. The device is designed for efficient power switching and control.
Key electrical characteristics include a 600V drain-source breakdown voltage and an 8A continuous drain current. These specifications make it suitable for applications requiring robust power handling capabilities. The TO-220F package facilitates heat dissipation, crucial for maintaining performance under load.
The breakdown voltage (Vdss) of the TK8A60W,S4VX(M is 600V.
The continuous drain current (Id) at 25°C for the TK8A60W,S4VX(M is 8A.
The TK8A60W,S4VX(M MOSFET is supplied in a TO-220F package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.