| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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556 pcs
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556 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Storage Temperature |
This Toshiba TK30A06J3A(Q) is a silicon N-Channel MOSFET designed for switching regulator applications. It offers a drain-source voltage of 60V and a continuous drain current of 30A.
Key electrical characteristics include a low typical drain-source ON-resistance of 19 mΩ and a high typical forward transfer admittance of 34 S. The leakage current is a maximum of 10 μA at 60V. The threshold voltage ranges from 1.3V to 2.5V under specific test conditions.
Absolute maximum ratings include a drain-source voltage of 60V, gate-to-source voltage of ±20V, and a continuous drain current of 30A. The device has a maximum power dissipation of 25W at 25°C ambient temperature. It is rated for a channel temperature up to 150°C and a storage temperature range of -55°C to +150°C.
The MOSFET is housed in a TO-220 package, suitable for through-hole mounting. This component is designed for efficient power switching in various electronic circuits.
60V.
30A.
19mΩ.
TO-220.
150°C.
1.3V to 2.5V.
25W at 25°C.
